SUM70N06-11-E3 [VISHAY]
Power Field-Effect Transistor, 70A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2;
| 型号： | SUM70N06-11-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 70A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM70N06-11
Vishay Siliconix
N-Channel 60-V (D-S), 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Available
60
0.011
70
RoHS*
Low Thermal Resistance Package
COMPLIANT
APPLICATIONS
Industrial
•
D
TO-263
G
G
D S
Top View
Ordering Information: SUM70N06-11
SUM70N06-11-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
20
Unit
VGS
V
Gate-Source Voltage
TC = 25 °C
70
Continuous Drain Current (TJ = 175 °C)
ID
TC = 100 °C
49
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
160
35
Repetitive Avalanche Energya
EAR
L = 0.1 mH
TC = 25 °C
61
mJ
W
120b
3.75
PD
Power Dissipation
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mountc
RthJA
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case
1.25
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72008
S-80273-Rev. C, 11-Feb-08
www.vishay.com
1
SUM70N06-11
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, IDS = 250 µA
Drain-Source Breakdown Voltage
60
V
Gate-Threshold Voltage
Gate-Body Leakage
2.0
3.0
4.0
100
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 48 V, VGS = 0 V
DS = 48 V, VGS = 0 V, TJ = 125 °C
DS = 48 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
IDSS
ID(on)
rDS(on)
gfs
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
µA
A
250
70
25
VGS = 10 V, ID = 30 A
0.0085
50
0.011
0.019
0.025
Drain-Source On-State Resistancea
V
V
GS = 10 V, ID = 30 A, TJ = 125 °C
GS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Ω
S
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
2500
400
165
40
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 70 A
Output Capacitance
Reverse Transfer Capacitance
pF
nC
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
60
Qgs
Qgd
td(on)
tr
13
12
15
25
20
50
15
11
V
DD = 30 V, RL = 0.43 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 70 A, VGEN = 10 V, RG = 2.5 Ω
td(off)
30
tf
7
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
70
160
1.5
80
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 50 A, VGS = 0 V
1.0
40
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 70 A, di/dt = 100 A/µs
1.7
3.5
0.14
0.034
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 72008
S-80273-Rev. C, 11-Feb-08
SUM70N06-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160
120
80
40
0
160
V
GS
= 10 thru 7 V
6 V
120
80
40
0
5 V
T
= 125 °C
C
25 °C
4 V
8
- 55 °C
0
1
2
3
4
5
6
7
8
0
2
4
6
10
60
60
V
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.015
0.012
0.009
0.006
0.003
0.000
120
100
80
60
40
20
0
T
= - 55 °C
25 °C
C
V
GS
= 10 V
125 °C
0
20
40
60
80
100
120
0
10
20
30
40
50
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
3500
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 30 V
= 70 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
0
10
20
30
40
50
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 72008
S-80273-Rev. C, 11-Feb-08
www.vishay.com
3
SUM70N06-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
100
V
D
= 10 V
GS
= 60 A
I
2.0
1.5
1.0
0.5
0.0
T = 150 °C
J
T = 25 °C
J
10
1
0.2
- 50 - 25
0
25
50
75 100 125 150 175
0.4
0.6
0.8
1.0
1.2
T
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
80
75
70
65
60
1000
100
10
I
D
= 10 mA
I
(A) at T = 25 °C
J
AV
1
I
AV
(A) at T = 150 °C
J
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001 0.0001
0.001
0.01
0.1
1
T - Junction Temperature (°C)
J
t
in
(s)
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
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4
Document Number: 72008
S-80273-Rev. C, 11-Feb-08
SUM70N06-11
Vishay Siliconix
THERMAL RATINGS
1000
80
70
60
50
40
30
20
10
0
10 µs
100 µs
Limited
by r
*
DS(on)
100
10
1 ms
1
10 ms
T
= 25 °C
C
Single Pulse
100 ms
DC
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Ambient Temperature (°C)
C
* V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72008.
Document Number: 72008
S-80273-Rev. C, 11-Feb-08
www.vishay.com
5
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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