SUM47N10-24L [VISHAY]
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET; N沟道100 -V （D -S ） 175度Celcious MOSFET
| 型号： | SUM47N10-24L |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 100-V (D-S) 175 Degree Celcious MOSFET |
| 文件： | 总4页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM47N10-24L
Vishay Siliconix
New Product
N-Channel 100-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D 175_C Maximum Junction Temperature
VDS (V)
rDS(on) (W)
ID (A)
D 100% Rg Tested
APPLICATIONS
0.024 @ V = 10 V
GS
47
44
100
0.027 @ V = 4.5 V
GS
D Automotive Such As:
− HID Lamp
− Ignition Systems
− Injection Systems
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM47N10-24L—E3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
100
"20
47
DS
GS
V
V
T
= 25_C
= 125_C
C
b
Continuous Drain Current (T = 175_C)
I
D
J
T
27
C
Pulsed Drain Current
I
70
A
DM
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
I
47
S
I
As
40
Single Pulse Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
E
As
80
mJ
b
T
= 25_C
= 25_C
136
C
Maximum Power Dissipation
P
D
W
a
T
3.75
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Unit
PCB Mount
Free Air
40
62.5
1.1
Junction-to-Ambient
Junction-to-Case
R
thJA
R
thJC
_C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 72827
S-40434—Rev. A, 15-Mar-04
www.vishay.com
1
SUM47N10-24L
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
100
1.0
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
DS
= 100 V, V = 0 V
GS
V
V
= 100 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 100 V, V = 0 V, T = 175_C
250
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
70
A
D(on)
GS
V
= 10 V, I = 40 A
0.019
0.024
0.048
0.060
0.027
GS
D
V
= 10 V, I = 40 A, T = 125_C
GS
D
J
b
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 10 V, I = 40 A, T = 175_C
D
J
V
GS
= 4.5 V, I = 20 A
0.021
70
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 40 A
S
DS
D
Dynamica
Input Capacitance
C
C
2400
290
120
40
iss
V
V
= 0 V, V = 25 V, F = 1 MHz
DS
Output Capacitance
pF
GS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
60
g
c
Gate-Source Charge
Q
Q
11
= 50 V, V = 10 V, I = 40 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
9
Gate Resistance
R
f = 1 MHz
1
2.2
8
3.5
13
W
g
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
r
40
60
V
DD
= 50 V, R = 1.25 W
L
ns
I
D
^ 47 A, V = 10 V, R = 2.5 W
GEN g
c
Turn-Off Delay Time
t
15
25
d(off)
c
Fall Time
t
f
80
120
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
70
1.5
120
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 40 A, V = 0 V
1.0
75
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 47 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Document Number: 72827
S-40434—Rev. A, 15-Mar-04
www.vishay.com
2
SUM47N10-24L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
160
V
GS
= 10 thru 6 V
5 V
120
80
40
0
4 V
3 V
T
= 125_C
C
−55_C
25_C
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.05
0.04
0.03
0.02
0.01
0.00
T
= −55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
30
40
50
60
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
20
16
12
8
4000
3000
2000
1000
0
V
D
= 50 V
DS
I
= 40 A
C
iss
4
C
rss
C
oss
0
0
20
40
60
80
100
0
20
40
60
80
V
DS
− Drain-to-Source Voltage (V)
Q − Total Gate Charge (nC)
g
Document Number: 72827
S-40434—Rev. A, 15-Mar-04
www.vishay.com
3
SUM47N10-24L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
3.0
100
10
1
V
D
= 10 V
GS
I
= 40 A
2.5
2.0
1.5
1.0
0.5
0.0
T = 175_C
J
T = 25_C
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
− Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
− Junction Temperature (_C)
V
J
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
50
40
30
20
10
0
100
10 ms
Limited by r
10
DS(on)
100 ms
1 ms
10 ms
1
100 ms, dc
T
= 25_C
C
Single Pulse
0.1
0.1
0
25
50
75
100
125
150
175
1
10
100
1000
V
DS
− Drain-to-Source Voltage (V)
T
− Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Document Number: 72827
S-40434—Rev. A, 15-Mar-04
www.vishay.com
4
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