SUM50N03-13LC-E3 [VISHAY]
TRANSISTOR 50 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-5, FET General Purpose Power;
| 型号： | SUM50N03-13LC-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 50 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-5, FET General Purpose Power 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM50N03-13LC
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Sense Terminal
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET Plus
Current Sensing Diode
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Available
50a
48a
0.013 at VGS = 10 V
0.017 at VGS = 4.5 V
RoHS*
•
Low Thermal Resistance Package
30
COMPLIANT
APPLICATIONS
Industrial
•
2
D PAK-5
D (Tab, 3)
1 2 3 4 5
(1)
(2)
(4)
KELVIN
G
SENSE
G
D
S
S (5)
SENSE
KELVIN
N-Channel MOSFET
Ordering Information: SUM50N03-13LC-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
50a
T
C = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
32a
100
25
TC = 125 °C
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
EAR
L = 0.1 mH
TC = 25 °C
TA = 25 °C
31
mJ
W
83c
2.7d
Maximum Power Dissipationb
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
55
Unit
PCB Mountd
RthJA
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case
1.8
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
www.vishay.com
1
SUM50N03-13LC
Vishay Siliconix
MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, IDS = 250 µA
Drain-Source Breakdown Voltage
30
1
V
Gate-Threshold Voltage
Gate-Body Leakage
3
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 125 °C
DS = 30 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
150
µA
A
ID(on)
50
30
VGS = 10 V, ID = 25 A
0.010
0.016
0.018
0.014
0.013
0.021
0.024
0.017
V
V
GS = 10 V, ID = 25 A, TJ = 125 °C
GS = 10 V, ID = 25 A, TJ = 175 °C
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = 4.5 V, ID = 24 A
Forward Transconductancea
Dynamicb
gfs
VDS = 15 V, ID = 25 A
S
Ciss
Coss
Crss
Qg
Input Capacitance
1960
380
180
35
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 20 V, ID = 50 A
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
50
Qgs
Qgd
td(on)
tr
7.6
5.6
10
20
180
60
93
V
DD = 15 V, RL = 0.3 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
td(off)
tf
30
10
20
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
50
100
1.6
70
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 50 A, VGS = 0 V
1.3
35
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Current Sense Characteristics
Current Sensing Ratio
IRM(REC)
Qrr
IF = 50 A, di/dt = 100 A/µs
1.5
0.026
µC
ID = 1 A, VGSS = 10 V, RSENSE = 1.1 Ω
r
420
520
3.5
620
rm(on)
VGS = 10 V, ID = 10 mA
Mirror Active Resistance
Ω
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
SUM50N03-13LC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
80
60
40
20
0
T
C
= - 55 °C
V
= 10 thru 5 V
GS
25 °C
80
60
40
20
0
4 V
125 °C
3 V
4
0
1
2
3
5
0
0
0
1
2
3
4
5
6
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
80
60
40
20
0
0.06
0.05
0.04
0.03
0.02
0.01
0.00
T
= - 55 °C
C
25 °C
125 °C
V
= 4.5 V
GS
V
= 10 V
GS
0
20
40
60
80
100
20
40
60
80
100
120
V
- Gate-to-Source Voltage (V)
GS
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
3000
2500
2000
1500
1000
500
10
8
V
GS
= 15 V
= 50 A
I
D
C
iss
6
4
C
oss
2
C
rss
0
0
0
6
12
18
24
30
5
10
15
20
25
30
35
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
www.vishay.com
3
SUM50N03-13LC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
V
I
= 10 V
= 25 A
GS
D
T = 175 °C
J
T = 25 °C
J
10
1
- 50 - 25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T - Junction Temperature (°C)
J
- Source-to-Drain Voltage (V)
SD
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
200
100
60
50
40
30
20
10
0
Limited
by r
DS(on)*
0.0001 s
10
0.001 s
0.01 s
T
= 25 °C
C
Single Pulse
0.1 s
DC
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
C
- Case Temperature (°C)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-5
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
10
1
3
Normalized Thermal Transient Impedance, Junction-to-Case
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4
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
SUM50N03-13LC
Vishay Siliconix
SENSE DIE TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
8
8
I
D
= 10 mA
6
6
V
GS
= 4.5 V
V
GS
= 10 V
4
4
2
2
0
0
0
2
4
6
8
10
0.00
0.02
0.04
I
0.06
(A)
0.08
0.10
V
- Gate-to-Source Voltage (V)
GS
SENSE
On-Resistance vs. Sense Current
On-Resistance vs. Gate-Source Voltage
1200
1000
800
600
400
200
0
R
S
R
S
R
R
S
G
S
R
S
SENSE
S
KELVIN
V
G
R
S
0
4
8
12
16
20
V
GS
- Gate-to-Source Voltage (V)
Current Ratio (I(MAIN)/IS
)
Figure 1.
vs. Gate-Source Voltage (Figure 1)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71804
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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