SUM50N06-16L-E3 [VISHAY]
TRANSISTOR 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power;
| 型号： | SUM50N06-16L-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM50N06-16L
Vishay Siliconix
N-Channel 60-V (D-S), 175 °C MOSFET, Logic Level
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
175 °C Junction Temperature
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
50
Available
•
0.016 at VGS = 10 V
0.022 at VGS = 4.5 V
RoHS*
60
43
COMPLIANT
D
TO-263
G
DRAIN connected to TAB
G
D S
Top View
S
Ordering Information: SUM50N06-16L
SUM50N06-16L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TC = 25 °C
50
Continuous Drain Current (TJ = 175 °C)
ID
TC = 100 °C
35
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
100
40
Repetitive Avalanche Energya
EAR
L = 0.1 mH
TC = 25 °C
80
mJ
W
93b
PD
Power Dissipation
A = 25 °Cc
3.7c
T
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
(PCB Mount)c
RthJA
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case
1.6
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. Surface mounted on FR4 Board, t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72048
S-80272-Rev. B, 11-Feb-07
www.vishay.com
1
SUM50N06-16L
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, IDS = 250 µA
Drain-Source Breakdown Voltage
60
V
Gate-Threshold Voltage
Gate-Body Leakage
1.0
2.0
3.0
100
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 125 °C
DS = 60 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
µA
A
150
ID(on)
50
VGS = 10 V, ID = 20 A
0.013
0.016
0.028
0.036
0.022
V
V
GS = 10 V, ID = 20 A, TJ = 125 °C
GS = 10 V, ID = 20 A, TJ = 175 °C
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = 4.5 V, ID = 20 A
0.017
50
Forward Transconductancea
Dynamicb
gfs
VDS = 15 V, ID = 20 A
S
Ciss
Coss
Crss
Qg
Input Capacitance
1325
265
115
25
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 50 A
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
40
Qgs
Qgd
td(on)
tr
5.5
6.5
10
20
20
50
15
9
V
DD = 30 V, RL = 0.8 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
td(off)
tf
25
7
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
50
100
1.5
70
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 50 A, VGS = 0 V
1.0
35
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 50 A, di/dt = 100 A/µs
2.3
4
0.04
0.14
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72048
S-80272-Rev. B, 11-Feb-07
SUM50N06-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
80
60
40
20
0
V
GS
= 10 thru 6 V
5 V
80
60
40
20
0
4 V
T
= 125 °C
C
25 °C
2
- 55 °C
2 V, 3 V
0
0
0
2
4
6
8
10
60
60
0
0
0
1
3
4
5
6
100
25
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
70
60
50
40
30
20
10
0
0.04
0.03
0.02
0.01
0.00
T
= - 55 °C
C
25 °C
125 °C
V
= 4.5 V
GS
V
GS
= 10 V
20
40
- Drain Current (A)
D
60
80
10
20
30
40
50
I
- Drain Current (A)
I
D
Transconductance
On-Resistance vs. Drain Current
2000
1750
1500
1250
1000
750
10
8
V
DS
= 30 V
= 40 A
I
D
C
iss
6
4
500
C
oss
2
250
C
rss
0
0
15
30
45
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 72048
S-80272-Rev. B, 11-Feb-07
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3
SUM50N06-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.5
V
D
= 10 V
GS
= 20 A
I
2.0
1.5
1.0
0.5
0.0
T = 150 °C
J
10
T = 25 °C
J
1
- 50 - 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
T - J unction Temperature (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
80
76
72
68
64
60
I
D
= 10 mA
I
(A) at T = 25 °C
A
AV
10
1
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
T - J unction Temperature (°C)
J
t
in
(s)
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 72048
S-80272-Rev. B, 11-Feb-07
SUM50N06-16L
Vishay Siliconix
THERMAL RATINGS
200
100
60
10 µs
Limited by r
*
DS(on)
50
40
30
20
10
0
100 µs
10
1
1 ms
10 ms
DC, 100 ms
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
* V
GS
minimum V at which r
is specified
GS
DS(on)
Drain Current vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72048.
Document Number: 72048
S-80272-Rev. B, 11-Feb-07
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5
Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
-
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
-
0° - 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DETAIL A (ROTATED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
SECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
-
0.002
-
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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