SUM50N06-16L [VISHAY]
N-Channel 60-V (D-S), 175C MOSFET, Logic Level; N通道60 -V （D -S ） ， 175 2 C MOSFET ，逻辑电平
| 型号： | SUM50N06-16L |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM50N06-16L
Vishay Siliconix
New Product
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D 175_C Junction Temperature
APPLICATIONS
V(BR)DSS (V)
rDS(on) (W)
ID (A)
0.016 @ V = 10 V
50
43
GS
D 12-V Automotive Systems
60
0.022 @ V = 4.5 V
GS
− Load Switch
− Motor Drive
− DC/DC
D
TO-263
G
DRAIN connected to TAB
G
D S
Top View
SUM50N06-16L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
60
"20
50
DS
GS
V
V
T
= 25_C
C
Continuous Drain Current
I
D
(T = 175_C)
J
T
= 100_C
35
C
A
Pulsed Drain Current
I
100
40
DM
Avalanche Current
I
AR
a
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
80
mJ
b
T
T
= 25_C
93
C
Power Dissipation
P
W
D
c
c
= 25_C
3.7
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
Junction-to-Ambient (PCB Mount)
R
thJA
R
thJC
40
C/W
Junction-to-Case
1.6
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72048
S-22124—Rev. A, 25-Nov-02
www.vishay.com
1
SUM50N06-16L
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
60
(BR)DSS
GS
D
V
V
DS
= V , I = 250 mA
V
1.0
2.0
3.0
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 60 V, V = 0 V
GS
V
V
= 60 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 60 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
50
A
D(on)
GS
V
= 10 V, I = 20 A
0.013
0.016
0.028
0.036
0.022
GS
D
V
V
= 10 V, I = 20 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 20 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
0.017
50
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamicb
Input Capacitance
C
1325
265
115
25
iss
Output Capacitance
C
oss
V = 0 V, V = 25 V, f = 1 MHz
GS DS
pF
nC
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
40
g
c
Gate-Source Charge
Q
Q
5.5
6.5
10
V
= 30 V, V = 10 V, I = 50 A
gs
gd
DS
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
20
20
50
15
d(on)
c
Rise Time
t
9
r
V
DD
= 30 V, R = 0.8 W
L
ns
c
Turn-Off Delay Time
t
25
I
] 50 A, V
= 10 V, R = 2.5 W
GEN G
d(off)
D
c
Fall Time
t
7
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
50
100
1.5
70
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.0
35
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
2.3
0.04
4
I
F
= 50 A, di/dt = 100 A/ms
Q
0.14
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 72048
S-22124—Rev. A, 25-Nov-02
www.vishay.com
2
SUM50N06-16L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
80
60
40
20
0
V
GS
= 10 thru 6 V
5 V
80
60
40
20
0
4 V
T
= 125_C
C
2 V, 3 V
25_C
−55_C
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
70
60
50
40
30
20
10
0
0.04
0.03
0.02
0.01
0.00
T
= −55_C
C
25_C
125_C
V
= 4.5 V
GS
V
GS
= 10 V
0
10
20
D
30
40
50
60
0
20
40
60
80
100
I
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
10
8
2000
1750
1500
1250
1000
750
V
D
= 30 V
DS
I
= 40 A
C
iss
6
4
500
C
oss
2
250
C
rss
0
0
0
15
30
45
60
0
5
10
Q − Total Gate Charge (nC)
g
15
20
25
V
− Drain-to-Source Voltage (V)
DS
Document Number: 72048
S-22124—Rev. A, 25-Nov-02
www.vishay.com
3
SUM50N06-16L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0.0
100
V
GS
= 10 V
I
D
= 20 A
T = 150_C
J
10
T = 25_C
J
1
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
J
SD
Drain Source Breakdown vs.
Junction Temperature
1000
80
76
72
68
64
60
I
D
= 10 mA
100
I
(A) @ T = 25_C
AV
A
10
1
I
AV
(A) @ T = 150_C
A
0.1
−50 −25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
− Junction Temperature (_C)
J
Document Number: 72048
S-22124—Rev. A, 25-Nov-02
www.vishay.com
4
SUM50N06-16L
Vishay Siliconix
New Product
THERMAL RATINGS
Drain Current vs. Case Temperature
Safe Operating Area
200
60
50
40
30
20
10
0
100
10 ms
Limited by r
DS(on)
100 ms
10
1 ms
10 ms
dc, 100 ms
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
− Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72048
S-22124—Rev. A, 25-Nov-02
www.vishay.com
5
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