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SUD50N03-10CP [VISHAY]

N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized; N通道30 -V （ DS ） ， 175度Celcious ， MOSFET的PWM优化
SUD50N03-10CP
型号： SUD50N03-10CP
厂家： VISHAY    VISHAY
描述：

N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized
N通道30 -V （ DS ） ， 175度Celcious ， MOSFET的PWM优化

晶体 晶体管 功率场效应晶体管 开关 脉冲
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SUD50N03-10CP  
New Product  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized  
FEATURES  
D TrenchFETr Power MOSFETS  
D PWM Optimized for High Efficiency  
APPLICATIONS  
PRODUCT SUMMARY  
D Buck Converter  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)a  
– High Side  
0.010 @ V = 10 V  
15  
18  
GS  
– Low Side  
30  
D Synchronous Rectifier  
0.012 @ V = 4.5 V  
GS  
– Secondary Rectifier  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD50N03-10CP  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
15  
DS  
V
V
GS  
T
= 25_C  
= 100_C  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
14  
A
Pulsed Drain Current  
I
100  
20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
b
T
T
= 25_C  
= 25_C  
71  
C
Maximum Power Dissipation  
P
D
W
a
8.3  
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
15  
40  
18  
50  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Case (Drain)  
Notes:  
1.75  
2.1  
thJC  
a
b
Surface mounted on 1” x 1” FR4 Board, t v 10 sec.  
See SOA curve for voltage derating.  
Document Number: 71791  
S-05485—Rev. B, 21-Jan-02  
www.vishay.com  
1
SUD50N03-10CP  
New Product  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 250 mA  
30  
1
(BR)DSS  
GS D  
V
V
DS  
= V , I = 250 mA  
V
GS DS  
GS(th)  
V
DS  
= 0 V, V = "20 V  
I
"100  
1
nA  
GS  
GSS  
V
DS  
= 24 V, V = 0 V  
GS  
V
V
= 24 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 24 V, V = 0 V, T = 175_C  
150  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
= 5 V, V = 10 V  
50  
20  
A
D(on)  
GS  
V
GS  
= 10 V, I = 15 A  
0.008  
0.010  
0.016  
0.020  
0.012  
D
V
V
= 10 V, I = 15 A, T = 125_C  
GS  
D
J
a
Drain-Source On-State Resistance  
r
W
DS(on)  
= 10 V, I = 15 A, T = 175_C  
GS  
D
J
V
GS  
= 4.5 V, I = 15 A  
0.0105  
60  
D
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 15 A  
S
D
Dynamicb  
Input Capacitance  
C
1725  
425  
120  
13  
iss  
Output Capacitance  
C
oss  
V
GS  
= 0 V, V = 25 V, f = 1 MHz  
pF  
DS  
Reversen Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
18  
g
c
Gate-Source Charge  
Q
Q
4.5  
4.0  
1.7  
10  
V
= 15 V, V = 4.5 V, I = 15 A  
nC  
gs  
gd  
DS  
GS  
D
c
Gate-Drain Charge  
Gate Resistance  
R
W
G
c
Turn-On Delay Time  
t
t
15  
240  
45  
d(on)  
c
Rise Time  
t
160  
30  
r
V
DD  
= 15 V, R = 1 W  
L
ns  
c
Turn-Off Delay Time  
I
D
] 15 A, V = 10 V, R = 6 W  
GEN G  
d(off)  
c
Fall Time  
t
f
55  
85  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
15  
100  
12  
S
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= 15 A, V = 0 V  
0.85  
80  
V
GS  
Reverse Recovery Time  
t
rr  
I
F
= 15 A, di/dt = 100 A/ms  
110  
ns  
Notes:  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 71791  
www.vishay.com  
S-05485—Rev. B, 21-Jan-02  
2
SUD50N03-10CP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 4 V  
40  
30  
20  
10  
0
T
= 125_C  
C
3 V  
25_C  
–55_C  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
DS  
Transconductance  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0
0.015  
0.012  
0.009  
0.006  
0.003  
0.000  
V
GS  
= 4.5 V  
T
= –55_C  
C
V
GS  
= 10 V  
25_C  
125_C  
0
10  
20  
30  
40  
50  
0
10  
20  
30  
40  
50  
I
D
– Drain Current (A)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
2500  
2000  
1500  
1000  
500  
10  
8
V
= 15 V  
DS  
C
iss  
I = 15 A  
D
6
4
C
oss  
2
C
rss  
0
0
0
6
12  
18  
24  
30  
0
5
10  
15  
20  
25  
30  
35  
40  
V
DS  
– Drain-to-Source Voltage (V)  
Q
g
– Total Gate Charge (nC)  
Document Number: 71791  
www.vishay.com  
S-05485—Rev. B, 21-Jan-02  
3
SUD50N03-10CP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.00  
50  
10  
V
= 10 V  
= 15 A  
GS  
I
D
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
T = 150_C  
J
T = 25_C  
J
1
–50 –25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
– Junction Temperature (_C)  
– Source-to-Drain Voltage (V)  
J
SD  
THERMAL RATINGS  
Maximum Avalanche Drain Current  
vs. Ambient Temperature  
Safe Operating Area  
1000  
100  
25  
20  
15  
10  
5
Limited  
by r  
DS(on)  
10 ms  
100 ms  
10  
1
1 ms  
10 ms  
100 ms  
1 s  
10 s  
100 s  
T
= 25_C  
A
0.1  
Single Pulse  
dc  
0
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
– Drain-to-Source Voltage (V)  
T
A
– Case Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 40_C/W  
thJA  
(t)  
3. T – T = P  
Z
JM  
A
DM thJA  
Single Pulse  
10  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71791  
www.vishay.com  
S-05485—Rev. B, 21-Jan-02  
4
SUD50N03-10CP  
New Product  
Vishay Siliconix  
THERMAL RATINGS  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71791  
www.vishay.com  
S-05485—Rev. B, 21-Jan-02  
5

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