SUD50N03-10P [FREESCALE]
N-Channel 30 V (D-S) 175 °C MOSFET; N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD50N03-10P |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-10P
N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(V)
R
W()
I
D
(A)
(BR)DSS
DS(ON)
A
0.010 @ V = 10 V
"50
GS
30
0.015 @ V = 4.5 V
"45
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N03-10P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
"30
"20
DS
V
V
GS
A
T
= 25_C
"50
C
Continuous Drain Current (T = 175_C)
I
J
D
T
C
= 100_C
"40
"180
"50
A
Pulsed Drain Current
I
DM
A
Continuous Source Current (Diode Conduction)
I
S
C
T
= 25_C
= 25_C
65
C
Maximum Power Dissipation
P
D
W
B
5
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
B
Maximum Junction-to-Ambient
R
R
30
thJA
_C/W
Maximum Junction-to-Case
2.3
thJC
Notes:
A. Package limited.
B. Surface mounted on FR4 Board, t v 10 sec.
C. See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70822.
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SUD50N03-10P
N-Channel
30 V (D-S) 175 °C MOSFET
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
V
2
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
nA
GS
GSS
V
DS
= 24 V, V = 0 V
1
GS
Zero Gate Voltage Drain Current
I
V
V
= 24 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 24 V, V = 0 V, T = 175_C
150
DS
GS
J
B
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
50
A
D(on)
V
= 10 V, I = 25 A
D
0.0075
0.010
0.016
0.019
0.015
GS
V
V
= 10 V, I = 15 A, T = 125_C
D J
GS
B
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 15 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 15 A
0.011
40
D
B
Forward Transconductance
g
fs
V
= 15 V, I = 15 A
20
S
DS
D
A
DYNAMIC
Input Capacitance
C
2700
680
360
45
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
C
Total Gate Charge
Q
70
g
C
Gate-Source Charge
Q
V
= 15 V, V = 10 V, I = 50 A
8.5
9.5
12
gs
gd
DS
GS
D
C
Gate-Drain Charge
Q
C
Turn-On Delay Time
t
20
15
60
20
d(on)
C
Rise Time
t
7
r
V
DD
= 15 V, R = 0.3 W
L
ns
C
I
] 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
35
D
GEN
G
d(off)
C
Fall Time
t
12
f
A
SOURCEĆDRAIN DIODE RATINGS AND CHARACTERISTICS= (T_2C5)
C
Continuous Current
Pulsed Current
I
50
180
1.5
80
S
A
I
SM
B
Forward Voltage
V
SD
I
= 50 A, V = 0 V
1.2
40
V
F
GS
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes:
A. Guaranteed by design, not subject to production testing.
B. Pulse test; pulse width v 300 ms, duty cycle v 2%.
C. Independent of operating temperature.
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SUD50N03-10P
N-Channel
30 V (D-S) 175 °C MOSFET
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
180
100
V
GS
= 10 thru 7 V
150
6 V
80
60
40
120
90
5 V
T
C
= 125_C
60
4 V
20
0
30
25_C
3 V
–55_C
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
OnĆResistance vs. Drain Current
80
60
40
20
0.030
0.025
0.020
0.015
0.010
0.005
0
T
= –55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
0
10
20
30
40
50
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
4000
3000
2000
1000
10
8
V
= 15 V
= 50 A
DS
C
iss
I
D
6
4
C
oss
2
C
rss
0
0
0
6
12
18
24
30
0
10
20
Q – Total Gate Charge (nC)
g
30
40
50
V
– Drain-to-Source Voltage (V)
DS
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SUD50N03-10P
N-Channel
30 V (D-S) 175 °C MOSFET
Typical Characteristics (25_C Unless Otherwise Noted)
OnĆResistance vs. Junction Temperature
SourceĆDrain Diode Forward Voltage
2.4
100
V
= 10 V
= 50 A
GS
I
D
2.0
1.6
1.2
0.8
0.4
0
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Thermal Ratings
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
60
50
40
30
20
10
0
10 ms
Limited
100 ms
100
10
by r
DS(on)
1 ms
T
= 25_C
C
10 ms
Single Pulse
100 ms
dc
1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, JunctionĆtoĆCase
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 30_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
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SUD50N03-10P
N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
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