SUD50N03-11 [FREESCALE]
N-Channel 30 V (D-S) 175 °C MOSFET; N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD50N03-11 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总7页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
175 °C Maximum Junction Temperature
100 % Rg Tested
I
D (A)a
50
VDS (V)
RDS(on) (Ω)
RoHS
0.011 at VGS = 10 V
0.017 at VGS = 4.5 V
COMPLIANT
30
43
D
TO-252
G
Drain Connected to Tab
G
D
S
S
Top View
Ordering Information: SUD50N03-11-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TC = 25 °C
50
Continuous Drain Current (TJ = 175 °C)b
ID
TC = 100 °C
37
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
100
50
62.5c
TC = 25 °C
PD
W
Maximum Power Dissipation
7.5b
TA = 25 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
17
50
2
20
60
Junction-to-Ambientb
RthJA
Steady State
°C/W
RthJC
RthJL
Junction-to-Case
Junction-to-Lead
2.4
4
4.8
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 s.
c. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
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SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ.a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
30
V
nA
µA
A
Gate Threshold Voltage
Gate-Body Leakage
0.8
VDS = 0 V, VGS
=
20 V
100
1
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125 °C
VDS = 5 V, VGS = 5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
50
ID(on)
50
10
VGS = 10 V, ID = 25 A
0.009
0.014
0.011
0.018
0.017
Drain-Source On-State Resistanceb
RDS(on)
V
GS = 5 V, ID = 20 A, TJ = 125 °C
VGS = 4.5 V, ID = 15 A
Ω
Forward Transconductanceb
Dynamica
gfs
VDS = 15 V, ID = 20 A
S
Ciss
Coss
Crss
Qg
Input Capacitance
1130
400
175
12
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 50 A
Output Capacitance
Reverse Transfer Capacitance
pF
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
20
Qgs
Qgd
Rg
4
nC
4.5
0.5
3.4
12
15
30
9
Ω
td(on)
tr
td(off)
tf
8
10
18
6
VDD = 15 V, RL = 0.3 Ω
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
ns
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and Characteristics TC = 25 °C
IS
ISM
VSD
trr
Continuous Current
50
80
1.5
50
A
Pulsed Current
Diode Forward Voltageb
IF = 100 A, VGS = 0 V
V
IF = 50 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
30
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
200
160
120
80
V
GS
= 10 thru 8 V
7 V
T
= - 55 °C
C
6 V
5 V
25 °C
125 °C
4 V
40
3 V
2 V
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
60
50
40
30
20
10
0
0.04
0.03
0.02
0.01
0.00
T
= - 55 °C
C
25 °C
125 °C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
I - Drain Current (A)
D
60
80
100
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2000
1600
1200
800
400
0
10
8
V
D
= 15 V
DS
= 50 A
I
C
iss
6
4
C
oss
C
rss
2
0
0
5
10
15
20
25
30
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
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SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V
D
= 10 V
GS
= 25 A
I
1.6
1.2
0.8
0.4
0.0
T = 150 °C
J
T = 25 °C
J
10
1
0
0.3
0.6
0.9
1.2
1.5
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- Source-to-Drain Voltage (V)
T
- Junction Temperature (°C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS
60
50
40
30
20
10
0
500
100
Limited
by R
*
DS(on)
10 µs
100 µs
10
1
10 ms
100 ms
1 s, DC
T
= 25 °C
C
Single Pulse
0.1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
* V
GS
minimum V at which R
is specified
GS
DS(on)
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
30
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SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD50N03-11
N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
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