SUD50N03-10CP-E3 [VISHAY]
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN;
| 型号： | SUD50N03-10CP-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN |
| 文件： | 总7页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-10CP
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
FEATURES
D TrenchFETr Power MOSFETS
D PWM Optimized for High Efficiency
D 100% Rg Tested
PRODUCT SUMMARY
APPLICATIONS
V(BR)DSS (V)
rDS(on) (W)
ID (A)a
D Buck Converter
c
0.010 @ V = 10 V
62
GS
- High-Side
30
c
- Low-Side
0.012 @ V = 4.5 V
GS
55
D Synchronous Rectifier
- Secondary Rectifier
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
S
Order Number:
SUD50N03-10CP
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
c
T
= 25_C
= 100_C
62
C
a
Continuous Drain Current (T = 175_C)
I
D
J
c
T
44
C
A
Pulsed Drain Current
I
100
20
DM
a
Continuous Source Current (Diode Conduction)
I
S
b
T
= 25_C
= 25_C
71
C
Maximum Power Dissipation
P
D
W
a
T
8.3
A
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
15
40
18
50
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Case (Drain)
Notes:
1.75
2.1
thJC
a
b
c
Surface mounted on 1” x 1” FR4 Board, t v 10 sec.
See SOA curve for voltage derating.
Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 71791
S-31724—Rev. D, 18-Aug-03
www.vishay.com
1
SUD50N03-10CP
Vishay Siliconix
MOSFET SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
V
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 24 V, V = 0 V
GS
V
V
= 24 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 24 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
50
20
A
D(on)
GS
V
GS
= 10 V, I = 15 A
0.008
0.010
0.016
0.020
0.012
D
V
V
= 10 V, I = 15 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 15 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 15 A
0.0105
60
D
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 15 A
S
D
Dynamicb
Input Capacitance
C
1725
425
120
13
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
18
g
c
Gate-Source Charge
Q
Q
4.5
4.0
1.7
10
V
DS
= 15 V, V = 4.5 V, I = 62 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
Gate Resistance
R
1
3.5
15
W
g
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
160
30
240
45
r
V
= 15 V, R = 1 W
L
DD
ns
c
Turn-Off Delay Time
t
d(off)
I
D
] 62 A, V
= 10 V, R = 6 W
GEN G
c
Fall Time
t
f
55
85
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
62
100
12
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 15 A, V = 0 V
0.85
80
V
GS
Reverse Recovery Time
t
rr
I
F
= 62 A, di/dt = 100 A/ms
110
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71791
S-31724—Rev. D, 18-Aug-03
www.vishay.com
2
SUD50N03-10CP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 4 V
40
30
20
10
0
T
= 125_C
C
3 V
8
25_C
-55_C
0
2
4
6
10
0.0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.015
0.012
0.009
0.006
0.003
0.000
V
GS
= 4.5 V
T
= -55_C
C
V
GS
= 10 V
25_C
125_C
0
10
20
30
40
50
0
10
20
30
40
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
Gate Charge
2500
2000
1500
1000
500
10
8
V
= 15 V
DS
C
iss
I = 15 A
D
6
4
C
oss
2
C
rss
0
0
0
6
12
18
24
30
0
5
10
15
20
25
30
35
40
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Document Number: 71791
S-31724—Rev. D, 18-Aug-03
www.vishay.com
3
SUD50N03-10CP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.00
50
10
V
D
= 10 V
GS
I
= 15 A
1.75
1.50
1.25
1.00
0.75
0.50
T = 150_C
J
T = 25_C
J
1
-50 -25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Ambient Temperature
Safe Operating Area
1000
100
25
20
15
10
5
Limited
DS(on)
by r
10 ms
100 ms
10
1
1 ms
10 ms
100 ms
1 s
10 s
100 s
T
= 25_C
A
0.1
Single Pulse
dc
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
A
- Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 40_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71791
S-31724—Rev. D, 18-Aug-03
www.vishay.com
4
SUD50N03-10CP
Vishay Siliconix
THERMAL RATINGS
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71791
S-31724—Rev. D, 18-Aug-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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