SIHFP23N50L-E3 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHFP23N50L-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Power MOSFET
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
PRODUCT SUMMARY
VDS (V)
500
Available
R
DS(on) (Ω)
VGS = 10 V
0.190
• Lower Gate Charge Results in Simpler Drive RoHS*
Requirements
Qg (Max.) (nC)
150
44
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
72
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
Configuration
Single
D
• Lead (Pb)-free Available
TO-247
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP23N50LPbF
SiHFP23N50L-E3
IRFP23N50L
Lead (Pb)-free
SnPb
SiHFP23N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
30
T
C = 25 °C
23
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
15
A
Pulsed Drain Currenta
IDM
92
Linear Derating Factor
2.9
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
410
23
EAR
37
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
370
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
14
- 55 to + 150
300d
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 23 A (see fig. 12).
c. ISD ≤ 23 A, dI/dt ≤ 430 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
www.vishay.com
1
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.24
-
RthCS
-
°C/W
RthJC
0.34
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
500
-
-
-
V
V/°C
-
3.0
-
0.27
-
5.0
100
50
V
nA
µA
mA
Ω
VGS
VDS = 500 V, VGS = 0 V
DS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 14 Ab
=
30 V
-
-
-
Zero Gate Voltage Drain Current
IDSS
V
-
-
0.190
-
2.0
0.235
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
VDS = 50 V, ID = 14 Ab
12
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
3600
380
37
-
-
-
-
-
-
VGS = 0 V,
VDS = 25 V,
Output Capacitance
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance
V
V
DS = 1.0 V , f = 1.0 MHz
4800
100
220
pF
Output Capacitance
Coss
DS = 400 V , f = 1.0 MHz
VDS = 0 V to 400 Vc
V
GS = 0 V
Effective Output Capacitance
Coss eff.
Effective Output Capacitance
(Energy Related)
Coss eff. (ER)
VDS = 0 V to 400 Vd
-
160
-
Internal Gate Resistance
Total Gate Charge
RG
Qg
f = 1 MHz, open drain
-
-
-
-
-
-
-
-
1.2
-
-
Ω
150
44
ID = 23 A, VDS = 400 V
see fig. 6 and 13b
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
nC
-
72
-
26
94
53
45
VDD = 250 V, ID = 23 A
G = 6.0, VGS = 10 V
see fig. 10b
-
ns
A
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
Continuous Source-Drain Diode Current
IS
-
-
-
-
23
92
G
integral reverse
p - n junction diode
Pulsed Diode Forward Currenta
Body Diode Voltage
ISM
VSD
trr
S
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
-
-
-
-
-
1.5
250
330
840
1500
11
V
TJ = 25 °C
170
220
560
980
7.6
Body Diode Reverse Recovery Time
ns
TJ = 125 °C
TJ = 25 °C
TJ =1 25 °C
IF = 23 A,
dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge
Qrr
µC
A
Reverse Recovery Current
Forward Turn-On Time
IRRM
ton
TJ = 25 °C
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS
.
d. Coss eff. (ER) is a fixed capacitance that stores the same energy time as Coss while VDS is rising fom 0 to 80 % VDS
.
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Document Number: 91209
S-81352-Rev. A, 16-Jun-08
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1000.00
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
1
TJ = 25 °C
100.00
BOTTOM 4.5V
TJ = 150 °C
0.1
10.00
4.5 V
0.01
0.001
20 µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25 °C
TJ = 150°C
1.00
0.1
1
10
100
1.0
6.0
11.0
16.0
VDS, Drain-to-Source Voltage (V)
V
, Gate-to-Source Voltage (V)
GS
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID = 23 A
TOP
BOTTOM 4.5V
1
4,5 V
20µs PULSE WIDTH
Tj = 150 °C
V
GS = 10 V
0.1
120
140 160
-60 -40 -20
0
20
40
60
80 100
1
10
100
TJ, Junction Temperature
(°C)
V
, Drain-to-Source Voltage (V)
DS
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
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3
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
100000
12
10
7
ID = 23
VGS = 0 V,
iss = Cgs + Cgd
Crss = Cgd
Coss = Cds + Cgd
f = 1 MHZ
, Cds SHORTED
C
VDS = 400 V
VDS = 250 V
VDS = 100 V
10000
1000
100
Ciss
5
Coss
Crss
2
10
0
72
24
120
0
48
96
1
10
100
1000
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
100.00
20
15
10
5
TJ = 150 °C
10.00
TJ = 25 °C
1.00
V
GS = 0 V
0
0.10
400
, Drain-to-Source Voltage (V)
1.5
0
100
500
600
1.0
2.0
200
300
0.0
0.5
VSD, Source-to-Drain Voltage (V)
V
DS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
25
20
15
10
5
1000
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
100
10us
100us
10
1ms
TC = 25 °C
TJ = 150 °C
10ms
Single Pulse
1
0
25
50
75
100
125
150
1000
10000
100
10
TC, Case Temperature
(°C)
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
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Document Number: 91209
S-81352-Rev. A, 16-Jun-08
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
RD
VDS
VDS
90 %
VGS
D.U.T.
RG
+
-
V
DD
10 %
VGS
10 V
td(on) tr
td(off) tf
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
10
1
D = 0.50
0.1
0.20
0.10
0.05
P
DM
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
2
Notes:
1. Duty factor D =
2. PeakT = P
t / t
1 2
thJC
x
Z
+
T
J
DM
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
750
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID
10A
15A
TOP
600
BOTTOM 23A
I
= 250 µA
D
450
300
150
0
25
50
150
125
75
100
150
75 100 125
- 75 - 50 - 25
0
25
TJ, Temperature (°C)
Fig. 13 - Threshold Voltage vs. Temperature
50
Starting T , Junction Temperature
(°C)
Fig. 14 - Maximum Avalanche Energy s. Drain Current
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
www.vishay.com
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IRFP23N50L, SiHFP23N50L
Vishay Siliconix
VDS
15 V
tp
Driver
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
20 V
IAS
0.01Ω
t
p
Fig. 15a - Unclamped Inductive Test Circuit
Fig. 15b - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 16a - Gate Charge Test Circuit
Fig. 16b - Basic Gate Charge Waveform
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Document Number: 91209
S-81352-Rev. A, 16-Jun-08
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
D.U.T
•
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
dI/dt
D.U.T. V Waveform
DS
Diode Recovery
dV/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig. 17 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91209.
Document Number: 91209
S-81352-Rev. A, 16-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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