SIHFP254N-E3 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHFP254N-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP254N, SiHFP254N
Vishay Siliconix
Power MOSFET
FEATURES
• Advanced Process Technology
PRODUCT SUMMARY
VDS (V)
250
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fully Avalanche Rated
• Fast Switching
Available
RDS(on) (Ω)
VGS = 10 V
0.125
RoHS*
COMPLIANT
Qg (Max.) (nC)
100
17
Q
Q
gs (nC)
gd (nC)
44
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
D
DESCRIPTION
TO-247
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
these Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP254NPbF
SiHFP254N-E3
IRFP254N
Lead (Pb)-free
SnPb
SiHFP254N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
250
V
VGS
20
T
C = 25 °C
23
Continuous Drain Current
VGS at 10 V
ID
A
TC =100°C
16
Pulsed Drain Currenta
IDM
92
Linear Derating Factor
1.5
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
300
14
EAR
22
220
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
7.4
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.1 mH, RG = 25 Ω, IAS = 14 A, VGS = 10 V.
c. ISD ≤ 14 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
www.vishay.com
1
WORK-IN-PROGRESS
IRFP254N, SiHFP254N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.24
-
-
°C/W
0.68
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
250
-
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
2.0
-
0.33
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
-
-
-
-
4.0
100
25
VGS
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 14 Ab
=
20 V
nA
-
Zero Gate Voltage Drain Current
IDSS
µA
-
250
0.125
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = 25 V, ID = 14 A
15
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
2040
260
62
-
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS = 25 V,
-
-
pF
nC
f = 1.0 MHz, see fig. 5
-
100
I
D = 14 A, VDS = 200 V,
Gate-Source Charge
Qgs
-
-
17
see fig. 6 and 13b
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
44
-
V
GS = 10 V
14
34
37
29
-
V
R
DD = 125 V, ID = 14 A,
ns
G = 3.6 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
5.0
13
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
23
92
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs
-
-
-
-
1.3
310
2.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
210
1.7
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
IRFP254N, SiHFP254N
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
Top
T
= 175 °C
J
Bottom
10
4.5 V
1
T
= 25 °C
J
V
= 50 V
20 µs PULSE WIDTH
DS
20 µs PULSE WIDTH
T
= 25 °C
J
0.1
0.1
100
4.0
5.0
10
6.0
, Gate-to-Source Voltage (V)
8.0
9.0
7.0
1
V
, Drain-to-Source Voltage (V)
V
DS
GS
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
4.0
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
I
= 23 A
D
Top
3.0
2.0
Bottom
4.5 V
10
4.5 V
1.0
0.0
20 µs PULSE WIDTH
V
= 10 V
T
= 175 °C
GS
20 40 60 80 100 120 140 160
T , Junction Temperature ( °C)
J
1
-60 -40 -20
0
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
J
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
www.vishay.com
3
IRFP254N, SiHFP254N
Vishay Siliconix
4000
100
10
V
= 0 V,
f = 1 MHz
SHORTED
GS
iss
rss
oss
C
C
C
= C + C , C
gs gd ds
= C
= C + C
gd
ds gd
T
= 175 °C
3000
2000
J
C
iss
C
oss
1
T
= 25 °C
1000
0
J
C
rss
V
= 0 V
GS
0.1
1
1000
10
, Drain-to-Source Voltage (V)
100
1.2
0.2
0.8
0.4
SD
0.6
1.0
V
, Source-to-Drain Voltage (V)
V
DS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
1000
I
= 14 A
D
V
V
V
= 200 V
= 125 V
OPERATING IN THIS AREA LIMITED
DS
DS
DS
BY R
DS(on)
=
50 V
16
12
100
10
100 µs
8
1 ms
1
4
10 ms
T
T
= 25 °C
= 175 °C
C
J
For Test Circuit
See Fig. 13
Single Pulse
0.1
0
1
100
10000
10
1000
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
IRFP254N, SiHFP254N
Vishay Siliconix
RD
25
20
15
10
5
VDS
VGS
D.U.T.
RG
+
V
-
DD
VGS
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
0
125
, Case Temperature (°C)
150
25
75
100
175
50
10 %
VGS
T
C
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z + T
DM
thJC C
0.01
0.00001
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (s)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
www.vishay.com
5
IRFP254N, SiHFP254N
Vishay Siliconix
VDS
15 V
tp
Driver
L
VDS
D.U.T.
IAS
RG
+
-
V
A
DD
A
IAS
VGS
0.01
Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
600
I
D
TOP
5.6 A
9.8 A
14 A
500
400
300
200
100
BOTTOM
0
125
Starting T , Junction Temperature (°C)
25
50
75
100
150
175
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test
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Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
IRFP254N, SiHFP254N
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode
forward drop
Inductor current
I
SD
Ripple ≤ 5 %
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91213.
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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