SIHFP21N60L [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | SIHFP21N60L |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
PRODUCT SUMMARY
VDS (V)
600
Available
R
DS(on) (Ω)
VGS = 10 V
0.27
RoHS*
• Lower Gate Charge Results in Simple Drive
Requirements
Qg (Max.) (nC)
150
46
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
64
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
Configuration
Single
D
• Lead (Pb)-free Available
TO-247
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control Applications
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRFP21N60LPbF
SiHFP21N60L-E3
IRFP21N60L
Lead (Pb)-free
SnPb
SiHFP21N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
VGS
30
T
C = 25 °C
21
Continuous Drain Current
VGS at 10 V
ID
A
TC =100°C
13
Pulsed Drain Currenta
IDM
84
Linear Derating Factor
2.6
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
420
21
EAR
33
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
330
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
16
- 55 to + 150
300d
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω, IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a).
c. ISD ≤ 21 A, dI/dt ≤ 530 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
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1
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.24
-
RthCS
-
°C/W
RthJC
0.38
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
600
-
-
-
V
mV/°C
V
V
DS Temperature Coefficient
-
3.0
-
420
Gate-Source Threshold Voltage
Gate-Source Leakage
-
5.0
100
50
2.0
0.32
-
VGS
VDS = 600 V, VGS = 0 V
DS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 13 Ab
=
30 V
-
nA
µA
mA
Ω
-
-
Zero Gate Voltage Drain Current
IDSS
V
-
-
0.27
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
VDS = 50 V, ID = 13 A
11
S
Input Capacitance
Ciss
Coss
VGS = 0 V,
VDS = 25 V,
-
-
-
-
4000
340
29
-
-
-
-
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Crss
f = 1.0 MHz, see fig. 5
pF
Coss eff.
170
V
GS = 0 V,
Effective Output Capacitance
(Energy Related)
V
DS = 0 V to 480 Vc
C
oss eff. (ER)
-
130
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
-
-
-
-
-
-
150
46
ID = 21 A, VDS = 480 V
see fig. 7 and 15b
VGS = 10 V
nC
Ω
64
Gate Resistance
Turn-On Delay Time
Rise Time
RG
td(on)
tr
f = 1 MHz, open drain
-
-
-
-
-
0.63
20
-
-
-
-
-
VDD = 300 V, ID = 21 A,
RG = 1.3 Ω, VGS = 10 V,
see fig. 11a and 11bb
58
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
33
10
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
21
84
A
G
Pulsed Diode Forward Currenta
Body Diode Voltage
ISM
S
VSD
TJ = 25 °C, IS = 21 A, VGS = 0 Vb
-
-
-
-
-
-
-
1.5
240
610
730
2310
7.9
V
160
400
480
1540
5.3
TJ = 25 °C, IF = 21 A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
ns
TJ = 125 °C, dI/dt = 100 A/µsb
TJ = 25 °C, IF = 21 A, VGS = 0 Vb
TJ = 125 °C, dI/dt = 100 A/µsb
TJ = 25 °C
Qrr
nC
A
Reverse Recovery Time
Forward Turn-On Time
IRRM
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 to 80 % VDS
.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91206
S-81273-Rev. B, 16-Jun-08
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
100
10
T
= 150°C
J
BOTTOM
10
1
1
0.1
T
6
= 25°C
J
5.5V
20µs PULSE WIDTH
0.1
0.01
0.01
0.001
V
= 50V
DS
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1000
4
8
10 12 14 16
V
, Drain-to-Source Voltage (V)
V
, Gate-to-Source Voltage (V)
DS
GS
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
I
= 21A
D
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
V
= 10V
GS
BOTTOM
5.5V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
DS
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
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3
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
100000
12.0
10.0
8.0
V
= 0V,
f = 1 MHZ
GS
I
= 21A
D
C
= C + C , C SHORTED
V
V
V
= 480V
= 300V
= 120V
iss
gs gd ds
DS
DS
DS
C
= C
gd
rss
C
= C + C
10000
1000
100
oss
ds
C
gd
iss
6.0
C
oss
4.0
C
rss
2.0
10
0.0
1
10
100
1000
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
20
15
10
5
100.00
10.00
1.00
T
= 150°C
J
T
= 25°C
J
V
= 0V
GS
0
0.10
0
100 200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Source-to-Drain Voltage (V)
SD
V
Drain-to-Source Voltage (V)
DS,
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91206
S-81273-Rev. B, 16-Jun-08
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
RD
VDS
DS
VGS
D.U.T.
RG
+
V
-
DD
100µsec
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
Fig. 11a - Switching Time Test Circuit
10msec
1000
0.1
1
10
100
10000
V
, Drain-to-Source Voltage (V)
DS
Fig. 9 - Maximum Safe Operating Area
VDS
25
90 %
20
15
10
5
10 %
VGS
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
Fig. 10 - Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P
DM
t
1
0.001
t
2
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
www.vishay.com
5
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
5.0
4.0
VDS
tp
I
= 250µA
D
3.0
2.0
1.0
IAS
Fig. 14c - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
-75 -50 -25
0
25
50
75 100 125 150
0.3 µF
T
, Temperature ( °C )
J
+
VDS
Fig. 13 - Threshold Voltage vs. Temperature
D.U.T.
-
VGS
800
3 mA
I
D
700
600
500
400
300
200
100
0
TOP
9.4A
13A
IG
ID
Current sampling resistors
BOTTOM 21A
Fig. 15a - Gate Charge Test Circuit
QG
VGS
QGS
QGD
25
50
75
100
125
150
VG
Starting T , Junction Temperature (°C)
J
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Charge
Fig. 15b - Basic Gate Charge Waveform
15 V
Driver
L
VDS
D.U.T
RG
+
-
V
A
DD
IAS
A
20 V
0.01
Ω
tp
Fig. 14b - Unclamped Inductive Test Circuit
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Document Number: 91206
S-81273-Rev. B, 16-Jun-08
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91206.
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
www.vishay.com
7
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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