SIE810DF-T1-GE3 [VISHAY]
N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel;
| 型号： | SIE810DF-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiE810DF
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D (A)
Definition
TrenchFET® Gen II Power MOSFET
Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
Silicon Package
•
•
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Limit
236
Limit
60
0.0014 at VGS = 10 V
0.0016 at VGS = 4.5 V
0.0027 at VGS = 2.5 V
20
221
60
90 nC
•
Leadframe-Based New Encapsulated Package
- Die Not Exposed
178
60
- Same Layout Regardless of Die Size
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
Package Drawing
www.vishay.com/doc?72945
•
•
•
PolarPAK
10
D
9
G
8
S
7
S
6
D
Compliant to RoHS directive 2002/95/EC
6
7
8
9
10
D
APPLICATIONS
•
•
•
VRM
D
DC/DC Conversion: Low-Side
Synchronous Rectification
D
D
S
G
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
S
Top View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE810DF-T1-E3 (Lead (Pb)-free)
SiE810DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?73774
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
12
V
221 (Silicon Limit)
60a (Package Limit)
TC = 25 °C
60a
45b, c
36b, c
100
60a
4.3b, c
27
Continuous Drain Current (TJ = 150 °C)
ID
TC = 70 °C
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
IAS
EAS
L = 0.1 mH
36
mJ
W
T
C = 25 °C
125
80
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
5.2b, c
3.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
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1
SiE810DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC(Drain)
Typical
20
0.8
Maximum
Unit
Maximum Junction-to-Ambienta, b
t ≤ 10 s
24
1
2.7
°C/W
Maximum Junction-to-Foot (Drain Top)
Maximum Junction-to-Foot (Source)a, c
Steady State
Steady State
R
thJC(Source)
2.2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
20
V
V
DS Temperature Coefficient
21.5
- 5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS , ID = 250 µA
VGS(th)
IGSS
0.8
25
1.3
2
V
VDS = 0 V, VGS
=
12 V
100
1
nA
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 10 V, ID = 25 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
10
ID(on)
0.0011
0.0013
0.0022
163
0.0014
0.0016
0.0027
Drain-Source On-State Resistancea
RDS(on)
gfs
VGS = 4.5 V, ID = 25 A
VGS = 2.5 V, ID = 25 A
VDS = 10 V, ID = 25 A
Ω
Forward Transconductancea
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
13000
1600
1000
200
90
V
DS = 10 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 10 V, VGS = 10 V, ID = 20 A
300
135
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
21
V
DS = 10 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
19
0.9
40
1.35
60
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
95
145
145
25
VDD = 10 V, RL = 1 Ω
Turn-Off Delay Time
Fall Time
95
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
15
ns
Turn-On Delay Time
Rise Time
20
30
70
105
150
15
VDD = 10 V, RL = 1 Ω
Turn-Off Delay Time
Fall Time
100
10
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
60
100
1.2
90
A
Body Diode Voltage
0.9
60
65
27
33
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
100
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
20
16
12
8
V
GS
= 5 V thru 2.5 V
80
60
40
20
0
T
C
= 125 °C
T
C
= 25 °C
V
GS
= 2 V
4
V
GS
= 1.5 V
T
C
= - 55 °C
0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0026
0.0022
18 000
15 000
12 000
9000
6000
3000
0
C
iss
V
= 2.5 V
GS
0.0018
0.0014
0.0010
V
= 4.5 V
GS
C
oss
C
rss
0
20
40
60
80
100
0
5
10
15
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I = 25 A
D
I
D
= 25 A
V
DS
= 10 V
8
6
4
2
0
V
GS
= 4.5 V
V
DS
= 16 V
V
GS
= 2.5 V
- 50 - 25
0
25
50
75
100 125 150
0
30
60
90
120
150
180
210
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
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3
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.0040
100
I
D
= 25 A
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
T
J
= 150 °C
10
125 °C
T
J
= 25 °C
25 °C
1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
I
D
= 250 µA
30
20
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
-Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by
R
DS(on)*
1 ms
10 ms
10
100 ms
1
1 s
10 s
T
A
= 25 °C
Single Pulse
0.1
DC
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300
250
200
150
100
50
140
120
100
80
60
40
20
Package Limited
50 75
- Case Temperature (°C)
0
0
0
25
100
125
150
25
50
75
100
125
150
T
C
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
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5
SiE810DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73774.
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6
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
Package Information
Vishay Siliconix
POLARPAK™ OPTION L
Product datasheet/information page contain
links to applicable package drawing.
M4
M4
10
D
9
8
7
6
G
S
S
D
View A
M2
M1
M3
M3
c
D
1
G
2
S
S
4
D
5
3
A
(Top View)
H4
b1
b2
H1
H3
H2 b1
H1
b3
6
D
7
S
8
S
9
G
10
D
θ
θ
P1
Z
D1
D
P1
A
b4
b4
D
5
S
4
S
3
G
2
D
1
0.26
b5
b5
b5
DETAIL Z
View A
(Bottom View)
A
0.20
0.33
0.58
Document Number: 72945
Revision: 11-Aug-08
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1
Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
A
MIN.
0.75
0.00
0.48
0.41
2.19
0.89
0.23
0.20
6.00
5.74
5.01
4.75
0.23
0.45
0.31
0.45
4.22
1.08
1.37
0.24
4.30
3.43
0.22
0.05
0.15
3.48
0.56
1.20
3.90
0
NOM.
0.80
-
MAX.
0.85
0.05
0.68
0.61
2.39
1.19
0.43
0.30
6.30
6.04
5.31
5.05
-
MIN.
0.030
0.000
0.019
0.016
0.086
0.035
0.009
0.008
0.236
0.226
0.197
0.187
0.009
0.018
0.012
0.018
0.166
0.043
0.054
0.009
0.169
0.135
0.009
0.002
0.006
0.137
0.022
0.047
0.153
0.000
0°
NOM.
0.031
-
MAX.
0.033
0.002
0.027
0.024
0.094
0.047
0.017
0.012
0.248
0.238
0.209
0.199
-
A1
b1
b2
b3
b4
b5
c
0.58
0.51
2.29
1.04
0.33
0.25
6.15
5.89
5.16
4.90
-
0.023
0.020
0.090
0.041
0.013
0.010
0.242
0.232
0.203
0.193
-
D
D1
E
E1
H1
H2
H3
H4
K1
K2
K3
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
θ
-
0.56
0.51
0.56
4.52
1.18
-
-
0.022
0.020
0.022
0.178
0.046
-
0.41
-
0.016
-
4.37
1.13
-
0.172
0.044
-
-
-
-
-
4.50
3.58
-
4.70
3.73
-
0.177
0.141
-
0.185
0.147
-
-
-
-
-
0.20
3.64
0.76
-
0.25
4.10
0.95
-
0.008
0.143
0.030
-
0.010
0.161
0.037
-
-
-
-
-
0.18
10°
0.36
12°
0.007
10°
0.014
12°
0°
ECN: T-08441-Rev. C, 11-Aug-08
DWG: 5946
Notes
Millimeters govern over inches.
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2
Document Number: 72945
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
0.510
(0.020)
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
0.895
(0.035)
+
0.895
(0.035)
0.580
(0.023)
0.580
(0.023)
2.290
(0.090)
0.510
(0.020)
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
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