SIE820DF [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SIE820DF |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总10页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiE820DF
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
ID (A)a
Silicon Package
•
Extremely Low Qgd WFET Technology for
Low Switching Losses
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Limit
Limit
0.0035 at V = 4.5 V
GS
136
•
•
TrenchFET® Power MOSFET
50
20
43 nC
Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-Sided Cooling
Leadframe-Based New Encapsulated Package
- Die Not Exposed
0.0064 at V = 2.5 V
GS
100
50
Package Drawing
www.vishay.com/doc?73398
•
- Same Layout Regardless of Die Size
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
PolarPAK
•
•
•
10
D
9
G
8
S
7
S
6
D
6
7
S
4
8
9
10
D
Compliant to RoHS directive 2002/95/EC
APPLICATIONS
•
•
•
VRM
D
D
G
DC/DC Conversion
Synchronous Rectification
D
D
1
G
2
S
3
S
4
D
5
5
3
2
1
G
Top View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE820DF-T1-E3 (Lead (Pb)-free)
SiE820DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?74447
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
12
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
136 (Silicon Limit)
50a (Package Limit)
50a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
ID
TC = 70 °C
TA = 25 °C
TA = 70 °C
30b, c
24b, c
80
50a
4.3b, c
30
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
IAS
EAS
L = 0.1 mH
mJ
W
45
T
T
C = 25 °C
C = 70 °C
104
66
PD
Maximum Power Dissipation
5.2b, c
TA = 25 °C
TA = 70 °C
3.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
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1
SiE820DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Typical
20
1
Maximum
Symbol
RthJA
thJC (Drain)
Unit
Maximum Junction-to-Ambienta, b
t ≤ 10 s
Steady State
24
1.2
3.4
Maximum Junction-to-Case (Drain Top)a
R
°C/W
Maximum Junction-to-Case (Source)a, c
RthJC (Source)
2.8
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
20
V
V
DS Temperature Coefficient
20
- 4.8
1.4
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.6
25
2
V
VDS = 0 V, VGS
=
12 V
IGSS
100
1
nA
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
µA
A
V
DS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 18 A
10
0.0029
0.0053
106
0.0035
0.0064
Drain-Source On-State Resistancea
Ω
S
VGS = 2.5 V, ID = 13.4 A
VDS = 10 V, ID = 18 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
4300
950
450
95
VDS = 10 V, VGS = 0 V, f = 1 MHz
DS = 10 V, VGS = 10 V, ID = 20 A
pF
Output Capacitance
Reverse Transfer Capacitance
V
143
65
Total Gate Charge
Qg
43
nC
V
DS = 10 V, VGS = 4.5 V, ID = 20 A
Qgs
Qgd
Rg
Gate-Source Charge
11.5
10
Gate-Drain Charge
Gate Resistance
f = 1 MHz
1.0
35
1.5
55
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 10 V, RL = 1.0 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Rise Time
115
105
30
175
160
45
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
15
25
ns
A
VDD = 10 V, RL = 1.0 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Rise Time
35
55
Turn-Off Delay Time
55
85
Fall Time
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
TC = 25 °C
IS = 10 A
IS
ISM
VSD
trr
50
80
0.8
101
100
75
1.2
150
150
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
ns
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
tb
25
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
20
16
12
8
V
GS
= 5 V thru 2.5 V
60
40
20
0
T
C
= 125 °C
4
T
C
= 25 °C
V
= 2 V
GS
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
1.0
1.4
1.8
2.2
2.6
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
7200
6000
4800
3600
2400
1200
0
0.008
0.007
0.006
0.005
0.004
0.003
0.002
V
GS
= 2.5 V
C
oss
C
iss
V
GS
= 4.5 V
C
rss
0
5
10
15
20
0
20
40
- Drain Current (A)
60
80
V
- Drain-to-Source Voltage (V)
I
D
DS
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 18 A
D
I
D
= 20 A
V
DS
= 10 V
V
GS
= 4.5 V
V
DS
= 16 V
6
V
GS
= 2.5 V
4
2
0
0
20
40
60
80
100
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
3
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.008
100
I
D
= 18 A
0.007
0.006
T
J
= 150 °C
T
J
= 25 °C
10
T
A
= 125 °C
0.005
0.004
0.003
0.002
T
A
= 25 °C
1
0
1
2
3
4
5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
I
D
= 250 µA
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
DS(on)*
1 ms
10
10 ms
100 ms
1
1 s
T
= 25 °C
A
10 s
Single Pulse
0.1
DC
BVDSS
Limited
0.01
0.01
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160
140
120
100
80
120
100
80
60
40
20
0
60
40
20
0
Package Limited
0
25
50
75
100
125
150
25
50
75
T - Case Temperature (°C)
C
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
5
SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
= P
Z
3. T - T
A
DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74447.
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6
Document Number: 74447
S09-1338-Rev. B, 13-Jul-09
Package Information
Vishay Siliconix
PolarPAK
ꢀ
(Option S)
Product datasheet/information page contain
links to applicable package drawing.
M4
M4
10
9
8
7
6
D
G
S
S
D
VIEW A
M3
M3
M2
M1
D
G
2
S
3
S
4
D
5
c
1
A
(Top View)
6
7
8
9
10
D
D
S
S
G
Q
Q
H1
H1
b3
b1
b2
b1
H3
H2
H4
Z
P1
D1
D
A1
P1
b4
b4
DETAIL Z
D
S
4
S
3
G
D
1
b5
b5
b5
5
2
VIEW A
(Bottom View)
Document Number: 73398
10-Jun-05
www.vishay.com
1
Package Information
Vishay Siliconix
MILLIMETERS
INCHES
Dim
A
Min
Nom
0.80
−
Max
Min
0.030
0.000
0.019
0.016
0.086
0.035
0.009
0.008
0.236
0.226
0.197
0.187
0.009
0.020
0.012
0.020
0.166
0.009
0.169
0.135
0.009
0.002
0.006
0.137
0.22
Nom
0.031
−
Max
0.033
0.002
0.027
0.024
0.094
0.047
0.017
0.012
0.248
0.238
0.209
0.199
−
0.75
0.00
0.48
0.41
2.19
0.89
0.23
0.20
6.00
5.74
5.01
4.75
0.23
0.45
0.31
0.45
4.22
0.24
4.30
3.43
0.22
0.05
0.15
3.48
0.56
1.20
3.90
0
0.85
0.05
0.68
0.61
2.39
1.19
0.43
0.30
6.30
6.04
5.31
5.05
−
A1
b1
b2
b3
b4
b5
c
D
D1
E
E1
H1
H2
H3
H4
K1
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
Q
0.58
0.51
2.29
1.04
0.33
0.25
6.15
5.89
5.16
4.90
−
0.023
0.020
0.090
0.041
0.013
0.010
0.242
0.232
0.203
0.193
−
−
0.56
0.51
0.56
4.52
−
−
0.022
0.020
0.022
0.178
−
0.41
−
0.016
−
4.37
−
0.172
−
4.50
3.58
−
4.70
3.73
−
0.177
0.141
−
0.185
0.147
−
−
−
−
−
0.20
3.64
0.76
−
0.25
4.10
0.95
−
0.008
0.143
0.030
−
0.010
0.150
0.037
−
0.051
0.154
0.000
0_
−
−
−
−
0.18
10_
0.36
12_
0.007
10_
0.014
12_
0_
ECN: S−51049—Rev. B, 13-Jun-05
DWG: 5947
Note: Millimeters govern over inches
Document Number: 73398
10-Jun-05
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2
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
0.510
(0.020)
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
0.895
(0.035)
+
0.895
(0.035)
0.580
(0.023)
0.580
(0.023)
2.290
(0.090)
0.510
(0.020)
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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6
Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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