SIE830DF-T1-GE3 [VISHAY]
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel;
| 型号： | SIE830DF-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiE830DF
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Extremely Low Qgd WFET® Technology for
ID (A)a
Low Switching Losses
RoHS
•
Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
Leadframe-Based New Encapsulated Package
- Die Not Exposed
Silicon Package
COMPLIANT
VDS (V)
Qg (Typ)
rDS(on) (Ω)
Limit
Limit
0.0042 at V = 10 V
GS
120
50
•
30
33 nC
0.0048 at V = 4.5 V
GS
112
50
- Same Layout Regardless of Die Size
Package Drawing
•
•
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
PolarPAK
APPLICATIONS
10
D
9
G
8
S
7
S
6
D
6
7
S
4
8
9
10
D
•
•
•
VRM
Point-of-Load
Synchronous Rectification
D
D
G
D
D
1
G
2
S
3
S
4
D
5
5
3
2
1
G
Top View
Top surface is connected to pins 1, 5, 6, and 10
Bottom View
S
N-Channel MOSFET
Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free)
For Related Documents
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
30
12
V
120 (Silicon Limit)
50a (Package Limit)
TC = 25 °C
50a
27b, c
21.6b, c
80
Continuous Drain Current (TJ = 150 °C)
ID
TC = 70 °C
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
50a
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
4.3b, c
30
45
104
66
5.2b, c
3.3b, c
A
mJ
Single Pulse Avalanche Current
Avalanche Energy
IAS
EAS
T
C = 25 °C
T
T
C = 25 °C
C = 70 °C
PD
Maximum Power Dissipation
W
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 50 to 150
260
°C
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74422
S-62482-Rev. A, 04-Dec-06
www.vishay.com
1
SiE830DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
thJC (Drain)
Typical
20
1
Maximum
Unit
Maximum Junction-to-Ambienta, b
t ≤ 10 sec
Steady State
24
1.2
3.4
Maximum Junction-to-Case (Drain Top)a
R
°C/W
Maximum Junction-to-Case (Source)a, c
RthJC (Source)
2.8
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS
ΔVDS /TJ
ΔVGS(th) /TJ
VGS(th)
30
V
V
DS Temperature Coefficient
30
- 4.8
1.4
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.6
25
2
V
VDS = 0 V, VGS
=
12 V
IGSS
100
1
nA
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
rDS(on)
gfs
µA
A
V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 16 A
10
0.0035
0.0039
95
0.0042
0.0048
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 16 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
3000
650
220
75
VDS = 15 V, VGS = 0 V, f = 1 MHz
DS = 15 V, VGS = 10 V, ID = 20 A
pF
Output Capacitance
Reverse Transfer Capacitance
V
115
50
Total Gate Charge
Qg
33
nC
V
DS = 15 V, VGS = 4.5 V, ID = 20 A
Qgs
Qgd
Rg
Gate-Source Charge
11
Gate-Drain Charge
5.1
1.0
35
Gate Resistance
f = 1 MHz
1.5
55
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on Delay Time
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Rise Time
105
70
160
105
145
25
Turn-Off Delay Time
Fall Time
95
Turn-on Delay Time
15
ns
A
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Rise Time
40
60
Turn-Off Delay Time
45
70
Fall Time
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
TC = 25 °C
IS = 10 A
IS
ISM
VSD
trr
50
80
1.2
60
60
0.8
40
40
22
18
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74422
S-62482-Rev. A, 04-Dec-06
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
20
16
12
8
V
GS
= 10 thru 3 V
60
40
20
0
T
C
= 125 °C
4
T
C
= 25 °C
1.4
V
GS
= 2 V
T
= - 55 °C
2.6
C
0
0.0
0.5
1.0
1.5
2.0
1.0
1.8
2.2
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0044
0.0042
0.0040
0.0038
0.0036
7200
6000
4800
3600
2400
1200
0
C
oss
V
= 4.5 V
GS
V
= 10 V
GS
0.0034
0.0032
0.0030
C
iss
C
rss
0
20
40
- Drain Current (A)
60
80
0
5
10
15
20
25
30
I
D
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 16 A
I
D
= 20 A
V
DS
= 15 V
V
GS
= 4.5 V, 10 V
V
DS
= 32 V
6
4
2
0
0
20
40
60
80
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74422
S-62482-Rev. A, 04-Dec-06
www.vishay.com
3
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
100
I
D
= 16 A
0.009
0.008
0.007
0.006
T
J
= 150 °C
T
A
= 125 °C
10
0.005
0.004
0.003
0.002
T
A
= 25 °C
T
= 25 °C
J
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
2
4
6
8
10
V - Gate-to-Source Voltage (V)
GS
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
I
D
= 250 µA
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
Time (sec)
100
1000
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
*Limited
by r
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
T
A
= 25 °C
10 s
DC
Single Pulse
0.1
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
*V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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Document Number: 74422
S-62482-Rev. A, 04-Dec-06
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
140
120
100
80
60
40
20
0
120
100
80
60
40
Package Limited
20
0
0
25
50
75
100
125
150
25
50
75
T - Case Temperature (°C)
C
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74422
S-62482-Rev. A, 04-Dec-06
www.vishay.com
5
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
= P
Z
3. T - T
A
DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (sec)
10
1
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74422.
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Document Number: 74422
S-62482-Rev. A, 04-Dec-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
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