SIE800DF [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SIE800DF |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiE800DF
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Extremely Low Qgd WFET Technology for
ID (A)a
Low Switching Losses
RoHS
•
•
TrenchFET® Power MOSFET
Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
Silicon Package
COMPLIANT
VDS (V)
Qg (Typ)
rDS(on) (Ω)
Limit
Limit
0.0072 at V = 10 V
GS
90
50
30
12 nC
•
Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
0.0115 at V = 4.5 V
GS
73
50
Package Drawing
•
•
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
PolarPAK
10
D
9
G
8
S
7
S
6
D
APPLICATIONS
6
D
5
7
8
9
10
D
•
•
•
VRM
DC/DC Conversion: High-Side
Synchronous Rectification
D
D
S
G
G
D
1
G
2
S
3
S
4
D
5
4
3
2
1
Top View
Top surface is connected to pins 1, 5, 6, and 10
Bottom View
S
Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
For Related Documents
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Limit
Parameter
Symbol
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
90 (Silicon Limit)
T
T
C = 25 °C
C = 70 °C
50a (Package Limit)
50a
20.6b, c
16.5b, c
60
ID
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
50a
4.3b, c
40
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
EAS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
80
mJ
W
TC = 25 °C
104
66
T
C = 70 °C
PD
Maximum Power Dissipation
5.2b, c
TA = 25 °C
TA = 70 °C
3.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 50 to 150
260
°C
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73199
S-60784-Rev. D, 08-May-06
www.vishay.com
1
SiE800DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Typical
20
1
Maximum
Symbol
RthJA
thJC (Drain)
Unit
Maximum Junction-to-Ambienta, b
t ≤ 10 sec
Steady State
24
1.2
3.4
Maximum Junction-to-Case (Drain Top)a
R
°C/W
Maximum Junction-to-Case (Source)a, c
RthJC (Source)
2.8
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS /TJ
ΔVGS(th) /TJ
VGS(th)
30
V
34.5
- 6.7
2.2
mV/°C
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.5
25
3.0
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
µA
A
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 11 A
10
On-State Drain Currenta
0.006
0.0095
50
0.0072
0.0115
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 9 A
VDS = 15 V, ID = 11 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Input Capacitance
1600
750
120
23
12
5.6
3
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
V
DS = 15 V, VGS = 10 V, ID = 18.5 A
35
18
Qg
Total Gate Charge
nC
Qgs
Qgd
Rg
V
DS = 15 V, VGS = 4.5 V, ID = 18.5 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
1.3
20
15
15
8
1.95
30
25
25
15
25
25
40
15
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
15
15
25
10
ns
A
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
50
60
1.2
70
65
Body Diode Voltage
0.8
45
41
21
24
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73199
S-60784-Rev. D, 08-May-06
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
60
25
20
15
10
5
V
GS
= 10 thru 5 V
50
40
30
20
10
0
4 V
T
C
= 125 °C
25 °C
3 V
- 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2500
2000
1500
1000
500
0.014
0.012
0.010
0.008
0.006
0.004
C
oss
V
GS
= 4.5 V
C
iss
V
GS
= 10 V
C
rss
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
D
= 10.8 A
I
D
= 18.5 A
8
6
4
2
0
V
= 15 V
DS
V
GS
= 10 V
V
GS
= 4.5 V
V
DS
= 24 V
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73199
S-60784-Rev. D, 08-May-06
www.vishay.com
3
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.020
0.016
0.012
0.008
0.004
60
I
= 10.8 A
D
T
= 150 °C
J
10
T
A
= 125 °C
T
= 25 °C
J
T
A
= 25 °C
6
1
0.00
0
2
4
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
3.0
2.6
2.2
1.8
1.4
1.0
50
40
I
D
= 250 µA
30
20
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
– Temperature (°C)
Time (sec)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
*Limited
by r
DS(on)
1 ms
10
10 ms
100 ms
1
1 s
10 s
0.1
T
= 25 °C
A
dc
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
*V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73199
S-60784-Rev. D, 08-May-06
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
120
120
100
80
60
40
20
0
100
80
60
40
Package Limited
20
0
25
50
75
– Case Temperature (°C)
C
100
125
150
0
25
50
75
125
150
100
T
T
– Case Temperature (°C)
C
Power Derating, Junction-to-Case
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73199
S-60784-Rev. D, 08-May-06
www.vishay.com
5
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
0.02
2
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
3. T – T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
1
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Source
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73199.
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Document Number: 73199
S-60784-Rev. D, 08-May-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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