SI9750CY-T1-E3 [VISHAY]

In-Rush Current Limit MOSFET Driver; 浪涌电流限制MOSFET驱动器
SI9750CY-T1-E3
型号: SI9750CY-T1-E3
厂家: VISHAY    VISHAY
描述:

In-Rush Current Limit MOSFET Driver
浪涌电流限制MOSFET驱动器

驱动器 MOSFET驱动器 驱动程序和接口 接口集成电路 光电二极管
文件: 总8页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si9750  
Vishay Siliconix  
In-Rush Current Limit MOSFET Driver  
FEATURES  
D 2.9- to 13-V Input Operating Range  
D Microprocessor RESET  
D Integrated High-Side Driver for N-Channel MOSFET  
D Programmable di/dt Current  
DESCRIPTION  
The Si9750 current limit MOSFET interface IC is designed to  
operate between a power source and a load using a low  
on-resistance power MOSFET with a sense terminal or in  
conjunction with a low ohmic sense resistor. The Si9750  
current limiter prevents source and load transients during hot  
swap and power-on with programmable dv/dt and di/dt. Both  
turn-on and steady-state current limits can be individually  
programmed, providing protection against short circuits.  
Power on RESET and logic controls allow complete  
microprocessor interfacing. The RESET function of the  
Si9750 is industry-standard with full programmability.  
The Si9750 is available in a 16-pin SOIC package and is rated  
over the commercial temperature range (0 to 70_C).  
The Si9750 is available in both standard and lead (Pb)-free  
packages.  
FUNCTIONAL BLOCK DIAGRAM  
V
DD  
V
DD  
L
BOOST  
COIL  
R
BIAS  
Bias  
Boost  
BOOST  
Ref  
C
POR  
BOOST  
HI/LO  
ENABLE  
STATUS  
Low R  
DS  
N-Channel FET  
GATE  
Gate  
Drive  
Control  
C
GATE  
I
BIAS  
SENSE  
Overcurrent  
C
RETRY  
Retry  
Delay  
+
R
SENSE  
R
LIMSET  
(mW)  
LIMSET  
LOAD  
V
LOAD  
POR  
POR  
V
RST  
C
RST  
Reset  
Load  
Reset  
Delay  
+
Ref  
GND  
RESET  
Bandgap  
Ref  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
1
Si9750  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Voltages Referenced to Ground  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 125_C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C  
V
DD  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V  
Boost Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 V  
a
Power Dissipation (package)  
Inputs/Outputs  
b
16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW  
(except Gate, Boost and V  
) . . . . . . . . . . . . . . . . . . . . . 0.3 to V + 0.3 V  
RST  
DD  
Thermal Impedance (Q ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140_C/W  
JA  
V
RST  
Input Current (0 < V  
< 15 V) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA  
RST  
Inputs/Outputs Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA  
RESET Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 mA  
STATUS Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 mA  
Notes  
a. Device mounted with all leads soldered or welded to PC board.  
b. Derate 7.2 mW/_C above 25_C.  
* . Exposure to Absolute Maximum rating conditions for extended periods may affect device reliability. Stresses above Absolute Maximum rating may cause permanent  
damage. Functional operation at conditions other than the operating conditions specified is not implied. Only one Absolute Maximum rating should be applied at any  
one time  
SPECIFICATIONS  
Test Conditions Unless Specified  
Limits  
0 to 70_C  
Typb  
2.9 V v V v 13.2 V  
DD  
HI/LO = GND, R  
= 12.5 kW  
BIAS  
Parameter  
Symbol  
Mina  
Maxa  
Unit  
L
= 100 mH, C  
= 100 nF  
BOOST  
BOOST  
Supply  
Quiescent Current  
I
Q
ENABLE =Logic Low  
4
8
mA  
Logic  
Enable Turn-On Voltage  
Enable Turn-Off Voltage  
Enable Source Current  
Turn-On Time  
V
V
0.3 x V  
EN(on)  
EN(off)  
ENSRC  
DD  
V
0.7 x V  
40  
DD  
I
V
= 0V  
120  
5
mA  
ENABLE  
t
ON  
See Figure 3  
Turn-Off Time  
t
5
OFF  
Turn-On Boost  
t
See Figure 4  
600  
10  
2
ms  
ON(BST)  
t
Initial Short Circuit  
Short Circuit  
t
C
C
= 33 nF, See Figure 6  
= 33 nF, See Figure 7  
OFF  
OFF  
OFF(ISC)  
GATE  
t
t
OFF(SC)  
GATE  
Status Output Voltage  
Status Output Delay Time  
Status Threshold  
V
I
= 200 mA  
0.4  
25  
V
STAT  
SINK  
t
See Figure 8  
ms  
STDLY  
V
0.85 x V  
0.7 x V  
0.95 x V  
STATTHR  
DD  
DD  
HI/LO Turn-On Voltage  
HI/LO Turn-Off Voltage  
V
V
HILO(on)  
DD  
V
0.3 x V  
HILO(off)  
DD  
Gate Drive  
Enhancement Voltage (V  
Source Current  
V  
)
V
8.5  
1.06  
1.6  
10.5  
1.30  
2.6  
15  
1.54  
3.7  
V
GATE  
SENSE  
GS  
I
SOURCE  
V
= 9 V  
mA  
CBOOST  
Sink Current  
I
SINK  
Current Sense Circuit  
Current Sense Amplifier Common Mode  
Range  
V
CMR  
0
V
DD  
+ 0.3  
V
Current Sense Amplifier Voltage Offset  
Current Sense Amplifier Bias Current  
V
3  
3
mV  
OS  
I
Normal Operation  
0.2  
19.5  
12  
SOS  
mA  
R
Reference Current  
I
18  
21  
LIMSET  
RLIMSET  
Current Sense Amplifier Hysteresis  
Current Sense Amplifier Series Offset  
V
HYST  
mV  
V
SOS  
HI/LO = V , V  
> 0.5 V  
20  
DD CMR  
Power On Reset  
RESET Output Voltage  
V
I
= 1 mA, V > 2 V  
0.4  
V
mV  
V
OP(rst)  
OUT DD  
c
RESET Output Hysteresis  
V
2
HYST  
See Note c  
RESET Comparator Input Threshold  
V
1.223  
1.250  
1.277  
RST  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
2
Si9750  
Vishay Siliconix  
SPECIFICATIONS  
Test Conditions Unless Specified  
Limits  
0 to 70_C  
Typb  
2.9 V v V v 13.2 V  
DD  
HI/LO = GND, R  
= 12.5 kW  
BIAS  
Parameter  
Symbol  
Mina  
Maxa  
Unit  
L
= 100 mH, C  
= 100 nF  
BOOST  
BOOST  
Power On Reset  
d
RESET Comparator Offset Voltage  
RESET Comparator Input Bias Current  
RESET Timer Delay  
V
0.5  
0.2  
150  
130  
mV  
mA  
ms  
RBIAS  
I
BIAS  
t
C
RST  
= 15 nF, See Figure 8  
110  
70  
190  
200  
RSTD  
RETRY  
t
C
RETRY  
= 100 nF  
ms  
RETRY  
Notes  
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.  
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production test.  
c. In a practical situation, V  
is multiplied by ratio of a resistor divider chain. For V = 13.2 V, V  
= 20 mV.  
HYST  
DD  
HYST  
d. The RESET comparator input threshold specification (V  
) includes theRESET comparator offset voltage.  
RST  
PIN CONFIGURATION AND ORDERING INFORMATION  
SOIC-16  
BOOST  
COIL  
GND  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
DD  
ORDERING INFORMATION  
GATE  
LOAD  
C
RST  
Part Number  
Temperature Range  
Package  
C
RETRY  
Si9750CY  
SENSE  
LIMSET  
HI/LO  
RESET  
Si9750CY-T1  
Si9750CY-T1—E3  
0 to 70_C  
SOIC-16  
STATUS  
V
RST  
ENABLE  
R
BIAS  
Top View  
PIN DESCRIPTION  
Pin Number  
Function  
Description  
1
2
3
4
BOOST  
Output of on-chip Boost converter. A 100-nF capacitor should be connected between BOOST and GND  
Positive supply pin.  
V
DD  
GATE  
LOAD  
Connection to external power MOSFET gate.  
Connection to positive supply side of LOAD.  
Connects external sense resistor of a sensefet sense pin to SENSE input of overcurrent trip comparator. A standard  
MOSFET may also be used in conjunction with a low ohmic value shunt resistor.  
5
6
SENSE  
LIMSET  
HI/LO  
Connects overcurrent limit set resistor R  
to the reference input of overcurrent trip comparator.  
LIMSET  
CMOS logic input to control the overcurrent trip comparator sensitivity at power-on. HI/LO should be connected to GND  
for low Capacitive loads and to V for high capacitive loads.  
DD  
7
8
ENABLE  
CMOS logic input to turn IC on or off. GATE voltage remains low when ENABLE is high.  
A resistor connected from this pin to GND programs the reference bias current for the overcurrent trip comparator  
9
R
BIAS  
resistor R  
and the GATE  
charge current. See Functional Description for equations.  
LIMSET  
(on)  
10  
11  
V
Input to voltage monitor comparator.  
RST  
Open drain NMOS output. This pin is driven low when the current limiter is enabled and the LOAD voltage is greater than  
STATUS  
RESET  
90% of V  
.
DD  
Open drain NMOS output. This pin is driven low during power on reset or when V  
reference.  
is lower than the internal 1.25-V  
RST  
12  
13  
14  
15  
16  
C
A capacitor connected from this pin to GND programs the retry timer.  
A capacitor connected from this pin to GND programs the reset timer.  
Negative supply pin.  
RETRY  
C
RST  
GND  
COIL  
Connection to Boost converter inductor.  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
3
Si9750  
Vishay Siliconix  
FUNCTIONAL DESCRIPTION  
The Si9750 together with an n-channel MOSFET provides the  
following functions:  
If the HI/LO pin is tied low the current limit is 20% higher during  
turn-on than the steady state current limit point.  
D limits di/dt current for hot insertion applications  
D provides complete short circuit protection  
I
x R  
> 1.2 x I  
x R  
LOAD  
SENSE  
BIAS LIMSET  
(2)  
(with pin HI/LO=Low)  
D high-side drive allows n-channel MOSFET to be  
used, for lower power dissipation  
If a higher current limit is needed at start-up, the HI/LO pin can  
be tied high. The equation becomes:  
D industry-standard microprocessor reset function  
D logic control input and outputs  
I
x R  
>1.2 x I  
x R  
(3)  
LOAD  
SENSE  
BIAS  
LIMSET  
+ I  
BIAS  
(1 kW + R )  
HI  
Setting the Current Limit  
(HI/LO = High)  
(SENSE, HI/LO pins, RLIMSET, RSENSE  
)
The current limit point is determined by the voltage across  
RSENSE, the value of RLIMSET, and the bias current. The  
current limit circuit is shown in Figure 1  
Notice that any current limit can be set at turn-on using an  
optional resistor, RHI.  
Relaxation Mode Current Limit  
(CRETRY pin)  
The steady state current is set by the equation:  
In an overload condition, the Si9750 will go into a relaxation  
mode current limit operation that not only protects the source  
and load, but also reduces the power dissipated in the  
MOSFET. When an overload is detected, the circuit quickly  
turns off, then goes into a retry mode whereby the current is  
ramped up slowly. If the fault still exists, the current will ramp  
down again. This sequence will repeat indefinitely at a period  
defined by 106 x CRETRY until the fault is removed. Typically,  
I
x R  
> I  
x R  
LIMSET  
(1)  
LOAD  
SENSE  
BIAS  
Due to the highly capacitive nature of some loads, the Si9750  
has an option to increase the current limit point to a much  
higher level at turn-on. In this case, turn-on is defined as VGATE  
< VDD + 7.8 V. This function is implemented with the HI/LO pin.  
capacitors in the range of 1 nF to 1 mF can be used on CRETRY  
,
but the period should be >50 ms.  
I
Si9750  
BIAS  
Overcurrent  
HI/LO  
1 kW, "20%  
+
SENSE  
GATE  
LIMSET  
HI/LO  
R
HI  
R
LIMSET  
(Optional)  
I
LOAD  
R
SENSE  
V
DD  
V
LOAD  
330 W  
330 W  
33 nF  
FIGURE 1.  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
4
Si9750  
Vishay Siliconix  
FUNCTIONAL DESCRIPTION (CONT’D)  
di/dt Limiting On Hot and Cold Insertion (GATE pin)  
boost inductor should typically be 100 mH, <3.5 W, >180 mA  
dc, and the boost capacitor should be 100 nF.  
The GATE pin provides a constant current source that is used  
to control the rate of rise of the gate of the MOSFET, and hence  
to control the di/dt of the load and source current. The equation  
that governs the gate current is:  
Logic Control  
(STATUS, ENABLE, RESET, VRST and CRST pins)  
12  
RBIAS  
STATUS. The status monitor detects when the load voltage is  
ISOURCE + 1.25 V x  
+ 1.2 mA  
(4)  
90% of input voltage, VLOAD > 0.9 x VDD. This pin is an  
open-drain NMOS output, capable of sinking 200 mA at VOL  
=
(for R  
= 12.5 kW)  
BIAS  
0.4 V. If this pin is used in conjunction with the ENABLE of  
another unit, power supply sequencing (or daisy-chaining) is  
easily implemented.  
Typically, a 33-nF capacitor should be connected from the  
GATE pin to ground. If a large ISOURCE is needed for high di/dt,  
a 330-W resistor in series with CGATE may be necessary to  
prevent oscillation. In the case that VDD > 6 V, a resistor of  
approximately 330 W is also recommended in series with the  
gate. (Figure 1)  
ENABLE. This CMOS logic compatible input serves as the  
on/off control pin. This pin has 40-mA minimum pull-up to VDD  
.
RESET (VRST, CRST, RESET pins). This is a standard  
implementation of the microprocessor reset function.  
comparator looks at the voltage on VRST pin and compares it  
with 1.25 V. This function is programmable by using an  
external voltage divider. When VRST is higher than 1.25 V, the  
reset signal is delayed by the CRST pin, defined by Equation (6)  
and then goes high. (Figure 2)  
A
Reference Bias Current  
(RBIAS pin)  
This pin sets the internal current used by RLIMSET to determine  
all the current limit points. Typically RBIAS = 12.5 kW which sets  
a 20-mA bias current. The equation which relates RBIAS to IBIAS  
is:  
4
Reset delay t  
[ 10 x C  
(6)  
RSTD  
RST  
1.25 V  
5 x RBIAS  
IBIAS  
+
+ 20 mA  
(5)  
(for R  
= 12.5 kW)  
BIAS  
HI/LO Pin  
Power on Reset (POR)  
(VDD pin)  
R
LIMSET  
C
RETRY  
Current  
This function monitors the voltage on the VDD pin and signals  
the system if all input voltage requirements have been met. At  
turn-on when VDD > 2.7 V " 200 mV, a POR signal is  
generated for a duration of 100 ms. After this point the system  
is released into operation. If VDD falls below 2.7 V " 200 mV,  
a second POR signal will be generated. If two POR signals are  
detected, this indicates that the source for VDD is not capable  
of supplying the load current. The IC then turns off the  
MOSFET and initiates its retry period, hence fully protecting  
the MOSFET from an over-power condition.  
Short Circuit  
Applied to Output  
Turn-On  
V
GATE  
> V + 7.8 V  
DD  
Current Limit Point  
I
LOAD  
Boost Converter  
(COIL, BOOST pins)  
FIGURE 2. Typical Operation Under Start-up Condition With  
An Overcurrent Fault Applied to the Output  
The boost converter generates the gate drive for the external  
n-channel MOSFET. This is limited to typically VDD + 11 V. The  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
5
Si9750  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)  
Gate-Source Drive Current vs. R  
Gate-Sink vs. V  
DD  
BIAS  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
2.80  
4.88  
6.96  
9.04  
(V)  
11.12  
13.20  
4
8
12  
16  
20  
R
(kW)  
V
DD  
BIAS  
R
Current vs. R  
RESET Timer Delay vs. C  
RESET  
LIMSET  
BIAS  
50  
40  
30  
20  
10  
0
400  
300  
200  
100  
0
0
4
8
12  
(kW)  
16  
20  
0
10  
20  
30  
(nF)  
40  
50  
R
C
RST  
BIAS  
RETRY Delay vs. C  
RETRY  
600  
500  
400  
300  
200  
100  
0
0
50  
100 150 200 250 300 350 400  
(nF)  
C
RETRY  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
6
Si9750  
Vishay Siliconix  
SWITCHING TIME TEST CIRCUITS  
V
DD  
0
ENABLE  
0.7 V  
OFF  
DD  
0.3 V  
ON  
DD  
t
t
I
SOURCE  
50 %  
0
50 %  
I
SINK  
FIGURE 3. Normal-Mode Operation  
1
ENABLE  
0
1
1
V
DD  
V
DD  
t
BOOST  
0
0
1
90 %  
V
V  
BOOST DD  
0
1
t
ON(bst)  
1
0
I
50 %  
SOURCE  
FIGURE 4. Timing Definition with ENABLE Already On  
FIGURE 5. Start of Boost Converter  
t
RETRY  
I
LOAD  
I
LOAD  
Threshold  
V
Threshold  
SENSE  
V
SENSE  
t
t
OFF(isc)  
OFF(sc)  
I
SOURCE  
V
G
0
1 V  
50%  
I
SINK  
FIGURE 6. First Short Circuit  
FIGURE 7. Relaxation-Mode Current Limit  
1
V
G
0
1
Status Threshold  
V
LOAD  
0
1
t
t
STDLY  
STDLY  
STATUS  
0
1
0.3 x V  
DD  
t
RSTD  
RESET(2)  
0
(2) With reset input divider correctly set, monitoring V  
LOAD  
FIGURE 8. STATUS and RESET  
Document Number: 70028  
S-40754—Rev. D, 19-Apr-04  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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