SI9803DY [VISHAY]
P-Channel Reduced Qg Fast Switching MOSFET; P沟道减少的Qg快速开关MOSFET
| 型号： | SI9803DY |
| 厂家： | 
VISHAY |
| 描述： | P-Channel Reduced Qg Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si9803DY
Vishay Siliconix
P-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.040 @ V = –4.5 V
"5.9
"4.8
GS
–25
0.060 @ V = –3.0 V
GS
S
S S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
D
D D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–25
"12
DS
GS
V
V
T
= 25_C
= 70_C
"5.9
"4.7
"40
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
–2.1
T
= 25_C
= 70_C
2.5
A
a
Maximum Power Dissipation
P
D
W
T
A
1.6
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
50
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70638
S-49559—Rev. C, 11-Feb-98
www.vishay.com S FaxBack 408-970-5600
1
Si9803DY
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = –250 mA
–0.6
V
GS(th)
DS
GS
D
= 0 V, V = "12 V
I
"100
–1
nA
DS
GS
GSS
V
= –25 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
DS(on)
V
= –25 V, V = 0 V, T = 70_C
–5
DS
GS
J
b
On-State Drain Current
I
V
DS
v–5 V, V = –4.5 V
–40
GS
V
V
= –4.5 V, I = –5.9 A
0.033
0.044
18
0.040
0.060
GS
D
b
Drain-Source On-State Resistance
r
W
= –3.0 V, I = –4.8 A
GS
D
b
Forward Transconductance
g
fs
V
= –9 V, I = –5.9 A
S
V
DS
D
b
Diode Forward Voltage
V
I
= –2.1 A, V = 0 V
–0.75
–1.2
25
SD
S
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
15.8
3.0
5.4
20
Q
gs
Q
gd
V
= –10 V, V = –4.5 V, I = –5.9 A
nC
ns
DS
GS
D
t
40
60
d(on)
t
r
30
V
= –10 V, R = 10 W
L
= –4.5 V, R = 6 W
GEN G
DD
I
D
^ –1 A, V
Turn-Off Delay Time
Fall Time
t
53
100
60
d(off)
t
f
31
Source-Drain Reverse Recovery Time
t
rr
I
F
= –2.6, di/dt = 100 A/ms
80
120
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design aid only; not subject to production testing.
Document Number: 70638
S-49559—Rev. C, 11-Feb-98
www.vishay.com S FaxBack 408-970-5600
2
Si9803DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
32
24
16
8
40
32
24
16
8
V
GS
= 5.5 thru 3.5 V
T
C
= –55_C
25_C
3 V
125_C
2.5 V
2 V
1.5 V
0
0
0
0
0
2
4
6
8
10
40
16
0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.15
0.12
0.09
0.06
0.03
0
3000
2500
2000
1500
1000
500
C
iss
V
= 3 V
GS
C
oss
V
= 4.5 V
GS
C
rss
0
8
16
24
32
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
1.6
1.2
0.8
0.4
0
V
I
= 10 V
= 5.9 A
V
I
= 4.5 V
= 5.9 A
DS
GS
D
D
4
8
12
–50
0
50
100
150
T – Junction Temperature (_C)
J
Q
g
– Total Gate Charge (nC)
Document Number: 70638
S-49559—Rev. C, 11-Feb-98
www.vishay.com S FaxBack 408-970-5600
3
Si9803DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
0.09
0.06
0.03
0
40
10
I
D
= 5.9 A
T = 150_C
J
T = 25_C
J
1
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.8
0.6
100
80
I
D
= 250 mA
0.4
60
40
0.2
0.0
20
0
–0.2
–0.4
–50
0
50
100
150
0.01
0.1
1
10
30
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 50_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70638
S-49559—Rev. C, 11-Feb-98
www.vishay.com S FaxBack 408-970-5600
4
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