SI9802DY [VISHAY]
Dual N-Channel Reduced Qg, Fast Switching MOSFET; 双N沟道减少的Qg ，快速开关MOSFET
| 型号： | SI9802DY |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si9802DY
Vishay Siliconix
Dual N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.055 @ V = 4.5 V
"4.5
"3.8
GS
20
0.075 @ V = 3.0 V
GS
D
1
D
1
D
2
D
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
1
G
2
G
Top View
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
"12
DS
GS
V
V
T
= 25_C
= 70_C
"4.5
"3.6
"25
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
DM
a
Continuous Source Current (Diode Conduction)
I
"1.7
2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
www.vishay.com S FaxBack 408-970-5600
1
Si9802DY
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "12 V
GS
I
"100
nA
GSS
V
= 20 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 20 V, V = 0 V, T = 70_C
V
GS
J
a
On-State Drain Current
I
w 5 V, V = 5 V
25
A
D(on)
DS
GS
V
= 4.5 V, I = 4.5 A
0.044
0.055
0.055
0.075
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 3.0 V, I = 3.8 A
D
a
Forward Transconductance
g
V
= 10 V, I = 4.5 A
11.5
0.73
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
=1.7 A, V = 0 V
1.2
10
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
5.5
1.2
1.5
12
30
23
9
g
Q
gs
Q
gd
V
= 10 V, V = 4.5 V, I = 4.5 A
nC
ns
DS
GS
D
t
25
60
d(on)
t
r
V
= 10 V, R = 10 W
L
= 4.5 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
50
d(off)
t
20
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
60
100
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
www.vishay.com S FaxBack 408-970-5600
2
Si9802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
25
20
15
10
5
25
20
15
10
5
V
GS
= 5 thru 3.5 V
T
= –55_C
C
3 V
25_C
125_C
2.5 V
2 V
1.5 V
0
0
0
0
0
2
4
6
8
10
25
6
0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.30
0.25
0.20
0.15
0.10
0.05
0
1200
900
600
300
0
C
iss
C
oss
V
= 3 V
GS
C
rss
V
= 4.5 V
GS
5
10
15
20
0
4
8
12
16
20
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
1.6
1.2
0.8
0.4
0
V
I
= 10 V
= 4.5 A
V
I
= 4.5 V
= 4.5 A
DS
D
GS
D
1
2
3
4
5
–50
0
50
100
150
T – Junction Temperature (_C)
J
Q
g
– Total Gate Charge (nC)
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
www.vishay.com S FaxBack 408-970-5600
3
Si9802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
0.09
0.06
0.03
0
30
10
I
D
= 4.5 A
T
J
= 150_C
T
J
= 25_C
1
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.2
50
40
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
30
20
10
0
–50
0
50
100
150
0.01
0.1
1
10
30
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 62.5_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
www.vishay.com S FaxBack 408-970-5600
4
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