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SI9801DY-E3 [VISHAY]

Transistor;
SI9801DY-E3
型号： SI9801DY-E3
厂家： VISHAY    VISHAY
描述：

Transistor
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中文：  中文翻译
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Si9801DY  
Vishay Siliconix  
N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.055 @ V = 4.5 V  
"4.5  
"3.8  
"4.0  
"3.0  
GS  
N-Channel  
P-Channel  
20  
0.075 @ V = 3.0 V  
GS  
0.080 @ V = –4.5 V  
GS  
–20  
0.120 @ V = –3.0 V  
GS  
S
2
SO-8  
G
G
2
S
G
S
D
D
D
D
1
2
3
4
8
7
6
5
1
1
2
2
D
G
1
Top View  
S
1
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
N-Channel  
P-Channel  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
20  
–20  
DS  
GS  
V
"14  
"20  
T
= 25_C  
= 70_C  
"4.5  
"3.6  
"4.0  
"3.0  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
1.7  
–1.7  
T
= 25_C  
= 70_C  
2.0  
1.3  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
N- or P-Channel  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70712  
S-61825—Rev. C, 16-Aug-99  
www.vishay.com S FaxBack 408-970-5600  
5-1  
Si9801DY  
Vishay Siliconix  
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
V
= V , I = 250 mA  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
0.6  
DS  
GS  
D
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
GS(th)  
V
DS  
= V , I = –250 mA  
–0.6  
GS  
D
"100  
"100  
1
I
V
DS  
= 0 V, V = "12 V  
nA  
GSS  
GS  
V
= 20 V, V = 0 V  
GS  
DS  
V
DS  
= –20 V, V = 0 V  
–1  
GS  
Zero Gate Voltage Drain Current  
I
mA  
A
DSS  
D(on)  
DS(on)  
V
V
= 20 V, V = 0 V, T = 70_C  
25  
DS  
GS  
J
= –20 V, V = 0 V, T = 70_C  
–25  
DS  
GS  
J
V
= 5 V, V = 4.5 V  
20  
DS  
GS  
a
On-State Drain Current  
I
V
DS  
= –5 V, V = –4.5 V  
–20  
GS  
V
= 4.5 V, I = 4.5 A  
0.044  
0.064  
0.055  
0.086  
11.5  
0.055  
0.080  
0.075  
0.120  
GS  
D
V
GS  
= –4.5 V, I = –4.0 A  
D
a
Drain-Source On-State Resistance  
r
W
V
= 3.0 V, I = 3.8 A  
D
GS  
V
GS  
= –3.0 V, I = –3.0 A  
D
V
= 15 V, I = 4.5 A  
D
DS  
a
Forward Transconductance  
g
fs  
S
V
V
DS  
= –15 V, I = –4.0 A  
9.8  
D
I
= 1.7 A, V = 0 V  
0.73  
1.2  
S
GS  
a
Diode Forward Voltage  
V
SD  
I
S
= –1.7 A, V = 0 V  
GS  
–0.75  
–1.2  
Dynamicb  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
N-Ch  
P-Ch  
5.2  
7.9  
0.95  
1.60  
1.15  
1.90  
12  
10  
15  
Total Gate Charge  
Q
g
N-Channel  
V
= 3.5 V, V = 4.5 V, I = 0.8 A  
DS  
GS D  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
Q
nC  
gs  
P-Channel  
V
= –3.5 V, V = –4.5 V  
DS  
GS  
= –0.8 A  
I
D
gd  
20  
40  
t
d(on)  
20  
N-Channel  
= 3.5 V, R = 4.3 W  
22  
50  
V
DD  
L
t
r
I
^ 0.8 A, V  
= 4.5 V, R = 6 W  
GEN G  
52  
90  
D
27  
50  
P-Channel  
= –3.5 V, R = 4.3 W  
Turn-Off Delay Time  
Fall Time  
t
ns  
d(off)  
V
DD  
L
37  
60  
I
D
^ –0.8 A, V  
= –4.5 V, R = 6 W  
GEN G  
8
20  
t
f
11  
20  
N-Channel—I = 1.7 A, di/dt = 100 A/ms  
60  
100  
100  
F
Source-Drain  
Reverse Recovery Time  
t
rr  
P-Channel—I = –1.7 A, di/dt = 100 A/ms  
60  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Document Number: 70712  
S-61825—Rev. C, 16-Aug-99  
www.vishay.com S FaxBack 408-970-5600  
5-2  
Si9801DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
NĆCHANNEL  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
V
GS  
= 5, 4.5 thru 3 V  
T
C
= –55_C  
16  
12  
8
25_C  
2.5 V  
125_C  
2 V  
4
4
1.5 V  
0
0
0
0
0
2
4
6
8
10  
20  
6
0
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
DS  
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.20  
0.16  
0.12  
0.08  
0.04  
0
1200  
900  
600  
300  
0
C
iss  
C
oss  
V
= 3 V  
GS  
C
rss  
V
= 4.5 V  
GS  
4
8
12  
16  
0
4
8
12  
16  
20  
I
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0
V
I
= 3.5 V  
= 0.8 A  
V
I
= 4.5 V  
= 4.5 A  
DS  
D
GS  
D
1
2
3
4
5
–50  
0
50  
100  
150  
T – Junction Temperature (_C)  
J
Q
g
– Total Gate Charge (nC)  
Document Number: 70712  
S-61825—Rev. C, 16-Aug-99  
www.vishay.com S FaxBack 408-970-5600  
5-3  
Si9801DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
NĆCHANNEL  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.15  
20  
0.12  
0.09  
0.06  
0.03  
0
10  
I
D
= 4.5 A  
T = 150_C  
J
T = 25_C  
J
1
0
2
4
6
8
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.4  
0.2  
50  
40  
I
D
= 250 mA  
–0.0  
–0.2  
–0.4  
–0.6  
30  
20  
10  
0
–50  
0
50  
100  
150  
0.01  
0.1  
1
10  
30  
T
J
– Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
0.02  
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 62.5_C/W  
thJA  
(t)  
3. T – T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
10  
–4  
–3  
–2  
–1  
10  
10  
10  
1
10  
30  
Square Wave Pulse Duration (sec)  
Document Number: 70712  
S-61825—Rev. C, 16-Aug-99  
www.vishay.com S FaxBack 408-970-5600  
5-4  
Si9801DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
PĆCHANNEL  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
V
GS  
= 5 thru 3.5 V  
T
C
= –55_C  
16  
12  
8
25_C  
3 V  
125_C  
2.5 V  
4
4
2 V  
1.5 V  
0
0
0
0
0
2
4
6
8
10  
20  
8
0
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
DS  
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.25  
0.20  
0.15  
0.10  
0.05  
0
1800  
1500  
1200  
900  
600  
300  
0
V
= 3 V  
GS  
C
iss  
V
= 4.5 V  
GS  
C
oss  
C
rss  
4
8
12  
16  
0
4
8
12  
16  
20  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0
V
I
= 3.5 V  
= 0.8 A  
V
I
= 4.5 V  
= 4.0 A  
DS  
D
GS  
D
2
4
6
–50  
0
50  
100  
150  
T – Junction Temperature (_C)  
J
Q
g
– Total Gate Charge (nC)  
Document Number: 70712  
S-61825—Rev. C, 16-Aug-99  
www.vishay.com S FaxBack 408-970-5600  
5-5  
Si9801DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
PĆCHANNEL  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.20  
20  
0.16  
0.12  
0.08  
0.04  
0
10  
I
D
= 4.0 A  
T = 150_C  
J
T = 25_C  
J
1
0
2
4
6
8
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.6  
0.4  
50  
40  
I
D
= 250 mA  
0.2  
30  
20  
0.0  
–0.2  
10  
0
–0.4  
–50  
0
50  
100  
150  
0.01  
0.1  
1
10  
30  
T
J
– Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
0.02  
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 62.5_C/W  
thJA  
(t)  
3. T – T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
10  
–4  
–3  
–2  
–1  
10  
10  
10  
1
10  
30  
Square Wave Pulse Duration (sec)  
Document Number: 70712  
S-61825—Rev. C, 16-Aug-99  
www.vishay.com S FaxBack 408-970-5600  
5-6  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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