SI7411DN-T1-GE3 [VISHAY]
MOSFET P-CH 20V 7.5A 1212-8;
| 型号： | SI7411DN-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET P-CH 20V 7.5A 1212-8 |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7411DN
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 11.4
- 9.9
Available
0.019 at VGS = - 4.5 V
0.025 at VGS = - 2.5 V
0.034 at VGS = - 1.8 V
•
•
TrenchFET® Power MOSFET: 1.8 V Rated
New PowerPAK® Package
- 20
- 8.5
- Low Thermal Resistance, RthJC
- Low 1.07 mm Profile
APPLICATIONS
Load Switch
•
PowerPAK 1212-8
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7411DN-T1-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
Si7411DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
8
V
VGS
TA = 25 °C
A = 85 °C
- 11.4
- 8.2
- 7.5
- 5.4
- 30
Continuous Drain Current (TJ = 150 °C)a
ID
T
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
- 3
3.6
1.9
- 1.3
1.5
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
PD
W
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
28
Maximum
Unit
t ≤ 10 s
35
81
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
RthJA
Steady State
Steady State
65
°C/W
RthJC
2.9
3.8
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72399
S-83051-Rev. E, 29-Dec-08
www.vishay.com
1
Si7411DN
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 300 µA
Gate Threshold Voltage
- 0.4
- 1.0
100
- 1
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS ≤ - 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
ID(on)
- 30
VGS = - 4.5 V, ID = - 11.4 A
0.015
0.020
0.027
35
0.019
0.025
0.034
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = - 2.5 V, ID = - 9.9 A
GS = - 1.8 V, ID = - 2.9 A
Ω
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = - 15 V, ID = - 11.4 A
IS = - 3.0 A, VGS = 0 V
S
V
VSD
- 0.8
- 1.2
41
Dynamicb
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
27
3.9
7
V
DS = - 10 V, VGS = - 4.5 V, ID = - 11.4 A
f = 1 MHz
nC
5
Ω
td(on)
tr
td(off)
tf
23
45
135
70
29
35
70
V
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
200
105
50
ns
trr
IF = - 3.2 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
30
25
20
15
10
5
V
= 5 thru 2 V
GS
1.5 V
1 V
T
= 125 °C
C
25 °C
- 55 °C
1.5
- Gate-to-Source Voltage (V)
0
0.0
0
0.5
1.0
2.0
2.5
0
1
2
3
4
5
V
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
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2
Document Number: 72399
S-83051-Rev. E, 29-Dec-08
Si7411DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
4000
3200
2400
1600
800
0.08
0.06
C
iss
V
= 1.8 V
0.04
0.02
0.00
GS
V
V
= 2.5 V
= 4.5 V
25
GS
C
oss
GS
C
rss
0
0
5
10
15
20
30
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5
4
3
2
1
0
V
D
= 4.5 V
V
D
= 10 V
DS
GS
= 11.4 A
I
I
= 11.4 A
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
T - Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
0.04
0.02
0.00
60
10
T
= 150 °C
J
I
D
= 11.4 A
I
D
= 2.9 A
T
= 25 °C
J
1
0.0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72399
S-83051-Rev. E, 29-Dec-08
www.vishay.com
3
Si7411DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
I
D
= 300 µA
0.3
0.2
30
20
10
0.1
0.0
- 0.1
- 0.2
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
J
Threshold Voltage
100
Limited by R
DS(on)*
I
Limited
DM
10
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
1
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
T
= 25 °C
A
0.1
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
is specified
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V
at which R
DS(on)
GS
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72399
S-83051-Rev. E, 29-Dec-08
Si7411DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72399.
Document Number: 72399
S-83051-Rev. E, 29-Dec-08
www.vishay.com
5
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Vishay
Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
相关型号：
SI7415DN-E3
TRANSISTOR 3.6 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power
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