SI7415DN-T1 [VISHAY]
Transistor;
| 型号： | SI7415DN-T1 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7415DN
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New PowerPAKr Package
− Low Thermal Resistance, RthJC
− Low 1.07-mm Profile
D Fast Switching
APPLICATIONS
0.065 @ V = −10 V
−5.7
−4.4
GS
RoHS
COMPLIANT
Available
−60
0.110 @ V = −4.5
V
GS
D Load Switches
D Half-Bridge Motor Drives
PowerPAK 1212-8
D High voltage Non-Synchronous Buck Converters
S
3.30 mm
3.30 mm
S
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
Bottom View
D
Ordering Information: Si7415DN-T1
Si7415DN-T1—E3 (Lead (Pb)-Free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−60
DS
V
V
GS
"20
T
= 25_C
= 70_C
−3.6
−2.9
−5.7
−4.6
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−30
a
continuous Source Current (Diode Conduction)
I
−3.2
3.8
−1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
2.0
0.8
Operating Junction and Storage Temperature Range
T , T
−55 to 150
J
stg
_C
b,c
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
65
33
81
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.9
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71691
S-51129—Rev. D, 13-Jun-05
www.vishay.com
1
Si7415DN
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1
−3
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −60 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −60 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −10 V
−20
A
D(on)
GS
V
= −10 V, I = −5.7 A
0.054
0.090
0.065
0.110
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −4.4 A
GS
D
a
Forward Transconductance
g
11
S
V
V
= −15 V, I = −5.7 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −3.2 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
15
4
25
g
Q
Q
V
= −30 V, V = −10 V, I = −5.7 A
nC
ns
gs
gd
DS
GS
D
3.2
12
12
22
16
45
t
20
20
35
25
90
d(on)
t
r
V
= −30 V, R = 30 W
L
GEN g
DD
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I = −3.2 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
16
12
8
20
16
12
8
V
GS
= 10 thru 5 V
4 V
T
= 125_C
C
4
4
25_C
3 V
−55_C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71691
S-51129—Rev. D, 13-Jun-05
www.vishay.com
2
Si7415DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1200
1000
800
600
400
200
0
0.20
C
iss
0.16
0.12
V
GS
= 4.5 V
0.08
0.04
0.00
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 30 V
V
GS
= 10 V
DS
I
= 5.7
A
I = 5.7 A
D
6
4
2
0
0
4
8
12
16
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
20
T
= 150_C
J
I
D
= 5.7 A
10
T
= 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71691
S-51129—Rev. D, 13-Jun-05
www.vishay.com
3
Si7415DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-to-Ambient
0.8
50
40
30
I
D
= 250 mA
0.6
0.4
0.2
20
10
0.0
−0.2
−0.4
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71691.
Document Number: 71691
S-51129—Rev. D, 13-Jun-05
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI7421DN-T1
TRANSISTOR 6.4 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power
VISHAY
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