SI7415DN [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI7415DN |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7415DN
Vishay Siliconix
New Product
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New PowerPAKt Package
– Low Thermal Resistance, RthJC
– Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
0.065 @ V = –10 V
–5.7
–4.4
GS
–60
D Fast Switching
APPLICATIONS
0.110 @ V = –4.5
V
GS
D Load Switches
D Half-Bridge Motor Drives
D High voltage Non–Synchronous Buck Converters
PowerPAKt 1212-8
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
–60
DS
V
"20
GS
T
= 25_C
= 70_C
–3.6
–2.9
–5.7
–4.6
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
–20
DM
a
continuous Source Current (Diode Conduction)
I
–3.2
3.8
–1.3
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
2.0
0.8
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
65
33
81
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.9
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71691
S-04881—Rev. A, 22-Oct-01
www.vishay.com
1
Si7415DN
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–1
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= –48 V, V = 0 V
–1
–5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –48 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
V
DS
v –5 V, V = –10 V
–20
A
D(on)
GS
V
= –10 V, I = –5.7 A
0.054
0.090
0.065
0.110
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= –4.5 V, I = –4.4 A
GS
D
a
Forward Transconductance
g
11
S
V
V
= –15 V, I = –5.7 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= –3.2 A, V = 0 V
–0.8
–1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
15
4
25
g
Q
Q
V
= –30 V, V = –10 V, I = –5.7 A
nC
ns
gs
gd
DS
GS
D
3.2
12
12
22
16
45
t
20
20
35
25
90
d(on)
t
r
V
= –30 V, R = 30 W
L
= –10 V, R = 6 W
GEN G
DD
I
D
^ –1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –3.2 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 10 thru 5 V
16
12
8
4 V
T
= 125_C
C
4
4
25_C
3 V
–55_C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71691
www.vishay.com
S-04881—Rev. A, 22-Oct-01
2
Si7415DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1200
1000
800
600
400
200
0
0.20
C
iss
0.16
0.12
V
GS
= 4.5 V
0.08
0.04
0.00
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 30 V
V
GS
= 10 V
DS
I
D
= 5.7
A
I = 5.7 A
D
6
4
2
0
0
4
8
12
16
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
20
T
= 150_C
J
I
D
= 5.7 A
10
T
= 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71691
www.vishay.com
S-04881—Rev. A, 22-Oct-01
3
Si7415DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.8
50
40
30
I
D
= 250 mA
0.6
0.4
0.2
20
10
0.0
–0.2
–0.4
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 71691
www.vishay.com
S-04881—Rev. A, 22-Oct-01
4
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