SI7413DN [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI7413DN |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7413DN
Vishay Siliconix
New Product
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New PowerPAKr Package
− Low Thermal Resistance, RthJC
− Low 1.07-mm Profile
0.015 @ V = −4.5 V
−13.2
−11.4
−9.5
GS
−20
0.020 @ V = −2.5
V
V
GS
APPLICATIONS
0.029 @ V = −1.8
GS
D Load Switch
PowerPAK 1212-8
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
D
5
P-Channel MOSFET
Bottom View
Ordering Information: Si7413DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"8
T
= 25_C
= 85_C
−8.4
−6.1
−13.2
−9.5
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−30
a
Continuous Source Current (Diode Conduction)
I
−3.2
3.8
−1.3
1.5
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
2.0
0.8
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
65
33
81
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case
1.9
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
1
Si7413DN
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −400 mA
−0.4
−1.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −4.5 V
−30
A
D(on)
GS
V
= −4.5 V, I = −13.2 A
0.012
0.016
0.023
0.015
0.020
0.029
GS
D
a
V
= −2.5 V, I = −11.4 A
Drain-Source On-State Resistance
r
W
GS
D
DS(on)
V
= −1.8 V, I = −3.5 A
GS
D
a
Forward Transconductance
g
47
S
V
V
= −15 V, I = −13.2 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −3.2 A, V = 0 V
−0.8
−1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
34
5.4
8.8
5
51
g
Q
Q
V
= −10 V, V = −4.5 V, I = −13.2 A
nC
gs
gd
DS
GS
D
R
g
f = 1 MHz
W
t
30
50
200
95
35
45
75
d(on)
t
r
V
= −10 V, R = 10 W
L
GEN g
DD
I
D
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
300
140
55
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = −3.2 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
25
20
15
10
5
25
V
= 5 thru 2 V
GS
20
15
10
5
1.5 V
T
= 125_C
C
25_C
1 V
−55_C
0
0
0
1
2
3
4
5
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
2
Si7413DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
5000
4000
3000
2000
1000
0
0.05
0.04
0.03
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
GS
0.02
0.01
0.00
C
oss
= 4.5 V
25
GS
C
rss
0
5
10
15
20
30
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
GS
= 4.5 V
DS
I
= 13.2
A
I = 13.2 A
D
0
5
10
15
20
25
30
35
40
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
T
= 150_C
J
I
D
= 13.2 A
I
D
= 3.5 A
10
T
= 25_C
J
1
0.0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
3
Si7413DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4
50
40
30
I
D
= 400 mA
0.3
0.2
0.1
20
10
0.0
−0.1
−0.2
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-To-Ambient
100
I
Limited
DM
r
Limited
DS(on)
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
= 25_C
A
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
4
Si7413DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
5
相关型号：
SI7415DN-E3
TRANSISTOR 3.6 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power
VISHAY
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