SI7409DN [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI7409DN |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7409DN
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
0.019 @ V = -4.5 V
-11
GS
D VDS Optimized for Load Switch
APPLICATIONS
-30
0.031 @ V = -2.5
V
-8.5
GS
D Load Switch
PowerPAKt 1212-8
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
D
5
P-Channel MOSFET
Bottom View
Ordering Information: Si7409DN-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-30
DS
V
"12
GS
T
= 25_C
= 85_C
-7
-5
-11
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
-7.9
A
Pulsed Drain Current
I
-30
DM
a
continuous Source Current (Diode Conduction)
I
-3.2
3.8
-1.3
1.5
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
2.0
0.8
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
65
33
81
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case
1.9
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
www.vishay.com
1
Si7409DN
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -250 mA
-0.6
-1.5
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= -24 V, V = 0 V
-1
-5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -24 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
v -5 V, V = -4.5 V
-30
A
D(on)
GS
V
= -4.5 V, I = -11 A
0.0015
0.025
0.019
0.031
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -2.5 V, I = -8.5 A
D
a
Forward Transconductance
g
40
S
V
V
= -15 V, I = -11 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= -3.2 A, V = 0 V
-0.7
-1.2
40
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
25
5
g
Q
Q
V
= -15 V, V = -4.5 V, I = -11 A
nC
ns
gs
gd
DS
GS
D
9
t
30
50
115
75
60
45
75
d(on)
t
r
V
= -15 V, R = 15 W
L
= -4.5 V, R = 6 W
GEN G
DD
I
^ -1 A, V
D
Turn-Off Delay Time
Fall Time
t
175
115
90
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = -3.2 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
25
20
15
10
5
V
GS
= 5 thru 2 V
25
20
15
10
5
1.5 V
T
= 125_C
C
25_C
1 V
-55_C
0
0
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
www.vishay.com
2
Si7409DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.030
4000
3200
2400
1600
800
0.024
V
GS
= 2.5 V
C
iss
0.018
0.012
0.006
0.000
V
GS
= 4.5 V
C
oss
C
rss
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
V
GS
= 4.5 V
DS
I
D
= 11
A
I = 11 A
D
0
5
10
15
20
25
30
-50
-25
0
J
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.12
0.10
0.08
0.06
0.04
0.02
0.00
30
10
I
D
= 11 A
T
= 150_C
J
1
0.1
T
= 25_C
J
0.01
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
www.vishay.com
3
Si7409DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.6
50
40
30
I
D
= 250 mA
0.4
0.2
-0.0
-0.2
-0.4
-0.6
20
10
T
= 25_C
A
Single Pulse
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-To-Ambient
100
r
Limited
DS(on)
I
Limited
DM
100 ms, 10 ms
10
1
1 ms
10 ms
I
D(on)
Limited
100 ms
1 s
T
= 25_C
10 s
A
0.1
Single Pulse
dc, 100 s
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
www.vishay.com
4
Si7409DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
www.vishay.com
5
相关型号：
SI7415DN-E3
TRANSISTOR 3.6 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power
VISHAY
©2020 ICPDF网 联系我们和版权申明