SI7409ADN-T1-E3 [VISHAY]
TRANSISTOR 7 A, 30 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power;
| 型号： | SI7409ADN-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 7 A, 30 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7409ADN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 11
Qg (Typ.)
Available
0.019 at VGS = - 4.5 V
0.031 at VGS = - 2.5 V
•
•
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
- 30
25
- 8.5
•
•
V
DS Optimized for Load Switch
100 % Rg Tested
PowerPAK 1212-8
APPLICATIONS
Load Switch
•
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 30
12
V
VGS
TA = 25 °C
A = 85 °C
- 11
- 7
Continuous Drain Current (TJ = 150 °C)a
ID
T
- 7.9
- 5
A
IDM
IS
Pulsed Drain Current
- 40
Continuous Source Current (Diode Conduction)a
- 3.2
3.8
- 1.3
1.5
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
PD
W
2.0
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
26
Maximum
Unit
t ≤ 10 s
33
81
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
RthJA
Steady State
Steady State
65
°C/W
RthJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
www.vishay.com
1
Si7409ADN
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 0.6
- 1.5
100
- 1
V
VDS = 0 V, VGS
=
12 V
Gate-Body Leakage
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 85 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 11 A
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
- 40
0.015
0.025
40
0.019
0.031
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 2.5 V, ID = - 8.5 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 15 V, ID = - 11 A
IS = - 3.2 A, VGS = 0 V
S
V
VSD
- 0.7
- 1.2
40
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
25
5
V
DS = - 15 V, VGS = - 4.5 V, ID = - 11 A
f = 1.0 MHz
nC
9
3.3
6.5
30
50
115
75
60
100
10
45
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
75
V
DD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
175
115
90
ns
trr
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
IF = - 3.2 A, dI/dt = 100 A/µs
Qrr
150
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
= 5 thru 2 V
1.5 V
T
= 125 °C
C
25 °C
1 V
- 55 °C
2.0
0
0.0
0
0.5
1.0
1.5
2.5
0
1
2
3
4
V
GS
-Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
Si7409ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4000
3200
2400
1600
800
0.030
0.024
V
GS
= 2.5 V
C
iss
0.018
0.012
0.006
0.000
V
GS
= 4.5 V
C
oss
C
rss
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
V
I
= 4.5 V
V
D
= 15 V
DS
GS
= 11 A
I
= 11 A
D
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
T - Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
0.12
0.10
0.08
0.06
0.04
0.02
0.00
30
10
T
= 150 °C
J
I
D
= 11 A
1
0.1
T
= 25 °C
J
0.01
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
www.vishay.com
3
Si7409ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
50
40
30
I
D
= 250 µA
0.4
0.2
0.0
20
10
- 0.2
- 0.4
- 0.6
T
= 25 °C
A
Single Pulse
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)*
I
Limited
DM
100 µs, 10 µs
10
1
1 ms
10 ms
I
D(on)
Limited
100 ms
1 s
T
= 25 °C
10 s
A
0.1
Single Pulse
DC, 100 s
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V
GS
at which R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
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4
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
Si7409ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73246.
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SI7409ADN-T1-GE3
TRANSISTOR 7 A, 30 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power
VISHAY
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