SI6405DQ-T1-E3 [VISHAY]
TRANSISTOR 7300 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal;
| 型号： | SI6405DQ-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 7300 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6405DQ
Vishay Siliconix
New Product
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D SO-8 Pin-Out Compatible
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.014 @ V = −4.5 V
−8.6
−7.6
−6.7
GS
D Load Switch
− Notebook PC
− Tablet PC
− PDA
0.018 @ V = −2.5 V
−12
GS
0.023 @ V = −1.8 V
GS
S
TSSOP-8
(With SO-8 Pin-Out)
G
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
D
Top View
D
P-Channel MOSFET
Ordering Information: Si6405DQ-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−12
"8
DS
V
V
GS
T
= 25_C
= 70_C
−8.6
−6.8
−7.3
−5.8
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
−40
DM
a
Continuous Source Current (Diode Conduction)
I
−1.5
1.67
1.06
−1.0
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
0.76
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
60
86
38
75
105
45
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72679
S-40275—Rev. A, 23-Feb-04
www.vishay.com
1
Si6405DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −300 mA
−0.40
−0.85
"100
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "8 V
GS
I
nA
GSS
V
= −12 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −12 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −4.5 V
20
A
D(on)
GS
V
= −4.5 V, I = −8.6 A
0.011
0.014
0.018
GS
GS
GS
D
0.0145
a
V
V
= −2.5 V, I = −7.6 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.0185
0.023
= −1.8 V, I = −6.7 A
D
a
Forward Transconductance
g
V
= −15 V, I = −8.6 A
35
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −1.5 A, V = 0 V
−0.62
−1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
42
4.6
65
g
Q
Q
V
= −10 V, V = −5 V, I = −8.6 A
nC
gs
gd
DS
GS
D
12.7
4.3
R
g
W
t
50
75
d(on)
t
r
105
185
135
100
160
280
205
150
V
= −10 V, R = 15 W
L
GEN G
DD
I
D
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = −1.5 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
V
GS
= 5 thru 2 V
1.5 V
T
= 125_C
C
25_C
−55_C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72679
S-40275—Rev. A, 23-Feb-04
www.vishay.com S FaxBack 408-970-5600
2
Si6405DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
5000
4000
3000
2000
1000
0
0.05
0.04
0.03
C
iss
V
GS
= 1.8 V
0.02
0.01
0.00
V
V
= 2.5 V
GS
C
oss
C
rss
= 4.5 V
24
GS
0
6
12
18
30
0
2
4
6
8
10
12
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
DS
GS
I
= 8.6 A
I = 8.6 A
D
0
10
20
30
40
50
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
30
10
T
= 150_C
J
I
D
= 8.6 A
T
= 25_C
J
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72679
S-40275—Rev. A, 23-Feb-04
www.vishay.com
3
Si6405DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
32
24
0.3
I
D
= 300 mA
0.2
0.1
16
8
0.0
−0.1
−0.2
0
10
−2
−1
−50 −25
0
25
50
75
100 125 150
10
1
10
100
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
Limited by r
10
DS(on)
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
dc
T
= 25_C
C
Single Pulse
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 86_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72679
S-40275—Rev. A, 23-Feb-04
www.vishay.com S FaxBack 408-970-5600
4
Si6405DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72679
S-40275—Rev. A, 23-Feb-04
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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