SI6410DQ-T1-E3 [VISHAY]
Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, ROHS COMPLIANT, MO-153, TSSOP-8;
| 型号： | SI6410DQ-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, ROHS COMPLIANT, MO-153, TSSOP-8 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6410DQ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
VDS (V)
RDS(on) (Ω)
ID (A)
7.8
• TrenchFET® Power MOSFETs
0.014 at VGS = 10 V
0.021 at VGS = 4.5 V
30
RoHS
6.3
COMPLIANT
D
TSSOP-8
* Source Pins 2, 3, 6 and 7
must be tied common.
G
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
Si6410DQ
S*
Top View
Ordering Information: Si6410DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
TA = 70 °C
7.8
6.2
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
30
Continuous Source Current (Diode Conduction)a
1.5
TA = 25 °C
TA = 70 °C
1.5
Maximum Power Dissipationa
PD
W
1.0
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
83
°C/W
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
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1
Si6410DQ
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
100
1
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
25
On-State Drain Currenta
20
VGS = 10 V, ID = 7.8 A
0.011
0.015
27
0.014
0.021
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 4.5 V, ID = 5 A
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 15 V, ID = 7.8 A
IS = 1.5 A, VGS = 0 V
S
V
VSD
0.7
1.1
Dynamicb
Qg
Qgt
Qgs
Qgd
td(on)
tr
VDS = 15 V, VGS = 5 V, ID = 7.8 A
Gate Charge
22
43
9.0
7.0
15
10
70
20
50
33
60
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
nC
ns
V
DS = 15 V, VGS = 10 V, ID = 7.8 A
30
20
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
120
50
trr
IF = 1.5 A, di/dt = 100 A/µs
Source-Drain Reverse Recovery Time
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70661
S-80682-Rev. D, 31-Mar-08
Si6410DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
30
30
24
18
12
6
V
GS
= 10 V thru 4 V
24
18
12
6
T
C
= 125°C
3 V
25 °C
2
- 55 °C
0
0
0
2
4
6
8
10
0
1
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
4200
3500
2800
2100
1400
700
C
iss
0.024
0.018
0.012
0.006
0
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.0
1.6
1.2
0.8
0.4
0
10
8
V
I
= 10 V
= 7.8 A
V
I
= 15 V
= 7.8 A
GS
D
DS
D
6
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
9
18
27
36
45
T - Junction Temperature (°C)
J
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
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3
Si6410DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.10
0.08
0.06
0.04
0.02
0
30
20
I
D
= 7.8 A
T
J
= 150 °C
10
T
= 25 °C
J
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
60
50
40
30
20
10
0
0.4
0.2
I
= 250 µA
D
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 50 - 25
0
25
50
75
100 125 150
0.01
0.10
1.00
Time (s)
10.00
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 83 °C/W
0.02
thJA
(t)
3. T
T
= P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70661.
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Document Number: 70661
S-80682-Rev. D, 31-Mar-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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