SI6410DQ [FAIRCHILD]
30V N-Channel PowerTrench MOSFET; 30V N沟道PowerTrench MOSFET的型号: | SI6410DQ |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 30V N-Channel PowerTrench MOSFET |
文件: | 总5页 (文件大小:163K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
October 2001
Si6410DQ
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V to 20V).
• 7.8 A, 30 V
RDS(ON) = 14 mΩ @ VGS = 10 V
DS(ON) = 21 mΩ @ VGS = 4.5 V
R
• Extended VGSS range ( 20V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
Applications
• Battery protection
• DC/DC conversion
• Power management
• Load switch
• Low profile TSSOP-8 package
D
S
5
6
7
8
4
3
2
1
S
D
G
S
S
D
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
V
A
VGSS
Gate-Source Voltage
20
7.8
ID
Drain Current – Continuous
(Note 1)
– Pulsed
Power Dissipation
20
1.4
1.1
PD
(Note 1a)
(Note 1b)
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
87
114
RθJA
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6410
Si6410DQ
13’’
16mm
3000 units
Si6410DQ Rev B(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA
∆BVDSS
Breakdown Voltage Temperature
22
ID = 250 µA, Referenced to 25°C
mV/°C
Coefficient
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 30 V,
VDS = 30 V, VGS = 0 V, TJ = 55°C
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
VGS = 0 V
1
25
100
–100
µA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
nA
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.6
–5
3
V
VDS = VGS
ID = 250 µA, Referenced to 25°C
,
ID = 250 µA
∆VGS(th)
Gate Threshold Voltage
mV/°C
Temperature Coefficient
∆TJ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V, ID = 6.3 A
ID = 7.8 A
11
14
14
21
mΩ
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
ID = 7.8 A
20
A
S
31
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1586
330
120
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
9
8
30
11
24
18
16
48
20
80
ns
ns
ns
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 0 V, IF = 1.5 A,
dIF/dt = 100A/µs
VDS = 15 V, ID = 7.8 A, VGS = 5 V
trr
Reverse Recovery Time
Qg
Qg
Qgs
Qgd
Total Gate Charge
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
14
28
4
20
39
nC
nC
nC
nC
V
DS = 15 V,
ID = 7.8 A,
VGS = 10 V
5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.5
1.1
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 1.5 A
Voltage
VSD
(Note 2)
0.7
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
87°C/W when
b)
c)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
mounted on a 1in2 pad
of 2 oz copper.
Scale 1 : 1 on letter size
paper
2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6410DQ Rev B(W)
Typical Characteristics
2.4
2.2
2
30
VGS = 10V
3.5V
4.5V
VGS = 3.0V
3.0V
20
10
0
1.8
1.6
1.4
1.2
1
3.5V
4.5V
6.0V
20
10V
0.8
0
5
10
15
25
30
0
0.5
1
1.5
2
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.04
ID = 7.8A
VGS = 10V
ID = 4A
0.035
0.03
0.025
TA = 125oC
0.02
0.015
TA = 25oC
0.01
0.8
0.6
0.005
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
TA = -55oC
25oC
VGS = 0V
VDS = 5V
25
20
15
10
5
10
125oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6410DQ Rev B(W)
Typical Characteristics
10
2400
2000
1600
1200
800
400
0
ID = 7.8A
VDS = 10V
f = 1MHz
GS = 0 V
15V
V
8
6
4
2
0
CISS
20V
COSS
CRSS
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
RDS(ON) LIMIT
SINGLE PULSE
100us
R
θJA = 114°C/W
T
A = 25°C
1ms
10ms
100ms
1s
10s
DC
10
1
VGS = 10V
SINGLE PULSE
0.1
0.01
R
θJA = 114oC/W
T
A = 25oC
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJA(t) = r(t) * RθJA
θJA =114 °C/W
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P(pk)
t1
t2
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6410DQ Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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