SI4866DY [VISHAY]
N-Channel Reduced Qg, Fast Switching MOSFET; N沟道减少的Qg ，快速开关MOSFET
| 型号： | SI4866DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4866DY
Vishay Siliconix
New Product
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
D TrenchFETr Power MOSFETS
PRODUCT SUMMARY
D PWM Optimized for High Efficiency
D Low Output Voltage
VDS (V)
rDS(on) (W)
ID (A)
D 100% RG Tested
APPLICATIONS
0.0055 @ V = 4.5 V
17
14
GS
12
0.008 @ V = 2.5 V
GS
D Synchronous Rectifier
D Point-of-Load Synchronous Buck Converter
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
12
DS
GS
V
V
"8
T
= 25_C
= 70_C
17
14
11
8
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current
I
"50
DM
a
Continuous Source Current (Diode Conduction)
I
2.7
3.0
2.0
1.40
1.6
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
34
67
15
41
80
19
a
Maximum Junction-to-Ambient (MOSFET)
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71699
S-03662—Rev. B, 14-Apr-03
www.vishay.com
1
Si4866DY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS D
= 0 V, V = "8 V
I
"100
nA
DS
GS
GSS
V
= 9.6 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 9.6 V, V = 0 V, T = 70_C
DS
GS
J
a
On-State Drain Current
I
40
A
V
w 5 V, V = 4.5 V
GS
D(on)
DS
0.0045
0.0055
0.008
V
= 4.5 V, I = 17
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 14
0.0065
80
GS
D
a
Forward Transconductance
g
fs
V
= 6 V, I = 17
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 2.7 A, V = 0 V
0.70
1.1
30
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
21
4.6
3.5
2.3
28
32
82
35
60
Q
gs
Q
gd
V
= 6 V, V = 4.5 V, I = 17 A
nC
DS
GS
D
R
G
1.5
3.9
42
W
t
t
d(on)
t
r
48
V
= 6 V, R = 6 W
L
= 4.5 V, R = 6 W
GEN G
DD
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
123
53
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 2.7 A, di/dt = 100 A/ms
90
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
= 10 thru 2.5 V
GS
40
30
20
10
0
2 V
T
C
= 125_C
25_C
-55_C
1.5 V
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 71699
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2
Si4866DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.015
4000
3200
2400
1600
800
0.012
0.009
C
iss
V
= 2.5 V
GS
C
oss
0.006
0.003
0.000
V
= 4.5 V
GS
C
rss
0
0
10
20
30
40
50
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 6 V
= 17 A
V
= 4.5 V
GS
DS
I
D
I = 17 A
D
0
5
10
15
20
25
30
-50
-25
0
J
25
50
75
100 125 150
T
- Junction Temperature (_C)
Q
g
- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.040
0.032
0.024
0.016
0.008
0.000
50
T = 150_C
J
10
T = 25_C
J
I
D
= 17 A
1
0.00
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 71699
S-03662—Rev. B, 14-Apr-03
www.vishay.com
3
Si4866DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
Threshold Voltage
0.4
200
160
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
120
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (sec)
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71699
S-03662—Rev. B, 14-Apr-03
www.vishay.com
4
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