SI4874BDY-T1-GE3 [VISHAY]

TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal;
SI4874BDY-T1-GE3
型号: SI4874BDY-T1-GE3
厂家: VISHAY    VISHAY
描述:

TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

光电二极管 晶体管
文件: 总8页 (文件大小:164K)
中文:  中文翻译
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Si4874BDY  
Vishay Siliconix  
N-Channel 30-V MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
16  
Available  
0.007 at VGS = 10 V  
0.0085 at VGS = 4.5 V  
TrenchFET® Power MOSFETs  
100 % Rg Tested  
30  
14  
D
SO-8  
S
S
S
G
D
1
2
3
4
8
7
6
5
D
D
G
D
Top View  
S
N-Channel MOSFET  
Ordering Information:  
Si4874BDY-T1-E3 (Lead (Pb)-free)  
Si4874BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
TA = 70 °C  
16  
13  
12  
9
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
50  
Continuous Source Current (Diode Conduction)a  
2.7  
3.0  
2.0  
1.40  
1.6  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
1.0  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
34  
Maximum  
Unit  
t 10 s  
41  
80  
21  
Maximum Junction-to-Ambient (MOSFET)a  
RthJA  
Steady State  
Steady State  
68  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
16  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 73058  
S09-0540-Rev. C, 06-Apr-09  
www.vishay.com  
1
Si4874BDY  
Vishay Siliconix  
MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
Gate Threshold Voltage  
1.0  
3.0  
100  
1
V
VDS = 0 V, VGS  
=
20 V  
Gate-Body Leakage  
nA  
VDS = 30 V, VGS = 0 V  
DS = 30 V, VGS = 0 V, TJ = 70 °C  
VDS 5 V, VGS = 10 V  
IDSS  
ID(on)  
Zero Gate Voltage Drain Current  
µA  
A
V
5
On-State Drain Currenta  
30  
VGS = 10 V, ID = 16 A  
0.0057  
0.0068  
65  
0.007  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
V
GS = 4.5 V, ID = 14 A  
0.0085  
Forward Transconductancea  
Diode Forward Voltagea  
gfs  
VDS = 15 V, ID = 16 A  
IS = 2.7 A, VGS = 0 V  
S
V
VSD  
0.74  
1.1  
Dynamicb  
Ciss  
Coss  
Crss  
Qg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
3230  
585  
255  
21  
VDS = 15 V, VGS = 0 V, f = 1 MHz  
VDS = 15 V, VGS = 4.5 V, ID = 16 A  
pF  
25  
Qgs  
Qgd  
Rg  
9.5  
6.5  
0.9  
16  
nC  
0.4  
1.4  
25  
20  
90  
25  
60  
Ω
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
10  
V
DD = 15 V, RL = 15 Ω  
ID 1 A, VGEN = 10 V, Rg = 6 Ω  
Turn-Off Delay Time  
Fall Time  
57  
ns  
15  
trr  
IF = 2.7 A, dI/dt = 100 A/µs  
Source-Drain Reverse Recovery Time  
40  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
V
= 10 V thru 4 V  
GS  
T
= 125 °C  
C
3 V  
25 °C  
- 55 °C  
3.5  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
4.0  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 73058  
S09-0540-Rev. C, 06-Apr-09  
Si4874BDY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0.010  
C
iss  
0.008  
V
= 4.5 V  
GS  
V
= 10 V  
GS  
0.006  
0.004  
0.002  
0.000  
C
oss  
C
rss  
0
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
V
- Drain-to-Source Voltage (V)  
I
D
- Drain Current (A)  
DS  
On-Resistance vs. Drain Current  
Capacitance  
6
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 16 A  
DS  
V
= 10 V  
= 16 A  
GS  
I
D
I
D
0
6
12  
18  
24  
30  
- 50 - 25  
0
25  
50  
75  
100 125 150  
T - Junction Temperature (°C)  
J
Q
g
- Total Gate Charge (nC)  
Gate Charge  
On-Resistance vs. Junction Temperature  
50  
10  
0.020  
0.016  
0.012  
0.008  
0.004  
0.000  
T = 150 °C  
J
I
D
= 16 A  
T = 25 °C  
J
1
0
2
4
6
8
10  
0.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
SD  
GS  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 73058  
S09-0540-Rev. C, 06-Apr-09  
www.vishay.com  
3
Si4874BDY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
0.4  
0.2  
200  
160  
I
D
= 250 µA  
0.0  
- 0.2  
- 0.4  
- 0.6  
- 0.8  
- 1.0  
120  
80  
40  
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
Time (s)  
T - Temperature (°C)  
J
Single Pulse Power  
Threshold Voltage  
100  
Limited by R  
*
DS(on)  
1 ms  
10  
1
10 ms  
100 ms  
1 s  
T
= 25 °C  
C
0.1  
10 s  
Single Pulse  
DC  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
* V  
GS  
minimum V at which R  
is specified  
DS(on)  
GS  
Safe Operating Area  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 67 °C/W  
thJA  
(t)  
Z
3. TJM - T = P  
4. Surface Mounted  
A
DM thJA  
Single Pulse  
0.01  
-4  
-3  
10  
-2  
10  
-1  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 73058  
S09-0540-Rev. C, 06-Apr-09  
Si4874BDY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
2
Duty Cycle = 0.5  
1
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
10  
-2  
10  
-1  
10  
10  
1
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?73058.  
Document Number: 73058  
S09-0540-Rev. C, 06-Apr-09  
www.vishay.com  
5
Package Information  
Vishay Siliconix  
SOIC (NARROW): 8-LEAD  
JEDEC Part Number: MS-012  
8
6
7
2
5
4
E
H
1
3
S
h x 45  
D
C
0.25 mm (Gage Plane)  
A
All Leads  
0.101 mm  
q
e
B
A
1
L
0.004"  
MILLIMETERS  
Max  
INCHES  
DIM  
A
Min  
Min  
Max  
1.35  
0.10  
0.35  
0.19  
4.80  
3.80  
1.75  
0.20  
0.51  
0.25  
5.00  
4.00  
0.053  
0.004  
0.014  
0.0075  
0.189  
0.150  
0.069  
0.008  
0.020  
0.010  
0.196  
0.157  
A1  
B
C
D
E
e
1.27 BSC  
0.050 BSC  
H
h
5.80  
0.25  
0.50  
0°  
6.20  
0.50  
0.93  
8°  
0.228  
0.010  
0.020  
0°  
0.244  
0.020  
0.037  
8°  
L
q
S
0.44  
0.64  
0.018  
0.026  
ECN: C-06527-Rev. I, 11-Sep-06  
DWG: 5498  
Document Number: 71192  
11-Sep-06  
www.vishay.com  
1
Application Note 826  
Vishay Siliconix  
RECOMMENDED MINIMUM PADS FOR SO-8  
0.172  
(4.369)  
0.028  
(0.711)  
0.022  
0.050  
(0.559)  
(1.270)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
www.vishay.com  
22  
Document Number: 72606  
Revision: 21-Jan-08  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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