SI4874DY [FAIRCHILD]
Single N-Channel, Logic Level, PowerTrencha MOSFET; 单N沟道逻辑电平MOSFET PowerTrencha
| 型号： | SI4874DY |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Single N-Channel, Logic Level, PowerTrencha MOSFET |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4874DY
Single N-Channel, Logic Level, PowerTrenchâ MOSFET
General Description
Features
13 A, 30 V. RDS(ON) = 0.0075 W @ VGS = 10 V
RDS(ON) = 0.010W @ VGS = 4.5 V.
Fast switching speed.
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
Low gate charge (35 nC typical).
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
High performance trench technology for
extremely low RDS(ON)
.
High power and current handling capability.
SuperSOTTM-6
SO-8
SOT-223
SuperSOTTM-8
SOIC-16
SOT-23
D
D
D
5
6
4
3
2
1
D
G
S
7
8
S
SO-8
S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol
VDSS
VGSS
ID
Parameter
Si4874DY
Units
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
30
±20
13
V
(Note 1a)
(Note 1a)
A
50
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
50
25
°C/W
°C/W
(Note 1)
Si4874DY Rev.A
© 2001 Fairchild Semiconductor International
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
30
V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
20
mV / oC
DBVDSS/DTJ
IDSS
VDS = 24 V, VGS = 0 V
1
µA
µA
nA
nA
TJ = 55°C
10
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
1.6
3
V
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
ID = 250 µA, Referenced to 25 oC
-4.5
mV /oC
DVGS(th)/DTJ
RDS(ON)
VGS = 10 V, I D = 13 A
0.0063 0.0075
W
TJ =125°C
0.009
0.014
0.01
VGS = 4.5 V, I D = 10.5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, I D = 13 A
0.0082
ID(ON)
gFS
On-State Drain Current
50
A
S
Forward Transconductance
50
DYNAMIC CHARACTERISTICS
C
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
3200
820
pF
pF
pF
iss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
400
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
VDS = 10 V, I D= 1 A
15
15
27
27
ns
ns
VGS = 10 V , RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
85
42
35
9
105
68
ns
ns
Qg
Qgs
Qgd
VDS = 15 V, I D = 13 A,
VGS = 5 V
50
nC
nC
nC
16
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
VSD
VGS = 0 V, IS = 2.1 A (Note 2)
0.71
Notes:
1. Rq is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rq is
JA
JC
guaranteed by design while RqCA is determined by the user's board design.
c. 125OC/W on a 0.006 in2 pad
of 2oz copper.
b. 105OC/W on a 0.04 in2
pad of 2oz copper.
a. 50OC/W on a 1 in2 pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si4874DY Rev.A
Typical Electrical Characteristics
2.5
2
50
V
=10V
GS
4.5V
3.5V
5.5V
VGS = 3.0V
40
30
20
10
0
3.0V
3.5 V
1.5
1
4.0 V
4.5 V
6.0 V
10V
2.5V
0.5
0
10
20
30
40
50
0
0.5
V
1
1.5
2
I
, DRAIN CURRENT (A)
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.03
0.025
0.02
0.015
0.01
0.005
0
1.6
ID = 6.5A
ID = 13A
VGS = 10V
1.4
1.2
1
TA = 125°C
25°C
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation with
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
Temperature.
40
60
50
40
30
20
10
0
VDS = 5.0V
VGS = 0V
5
1
TJ = 125°C
0.1
25°C
0.01
-55°C
TJ =125°C
0.001
25°C
-55°C
0.0001
0
0.2
V
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5 . Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4874DY Rev.A
Typical Electrical Thermal Characteristics
7000
4000
10
V
= 5V
DS
I
= 13A
D
10V
C
iss
8
6
4
2
0
15V
2000
1000
500
C
C
oss
rss
f = 1 MHz
VGS = 0 V
200
100
0.1
0.2
V
0.5
1
2
5
10
30
0
10
20
30
40
50
60
70
80
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
g
DS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
30
50
SINGLE PULSE
RqJA=125°C/W
40
30
20
10
0
10
5
T = 25°C
A
2
1
0.5
VGS =10V
SINGLE PULSE
RqJA= 125°C/W
TA = 25°C
0.1
0.05
0.01
0.05 0.1
0.5
1
2
5
10
30 50
0.001
0.01
0.1
1
10
100 300
V
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
JA
JA
q
q
R
= 125°C/W
JA
q
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t1
t2
Single Pulse
0.005
T - T = P * R
(t)
JA
q
J
A
0.002
0.001
Duty Cycle, D = t1 /t
2
0.0001
0.001
0.01
0.1
1
10
100
300
t , TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4874DY Rev.A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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