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SI4866DY-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
SI4866DY-E3
型号： SI4866DY-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Si4866DY  
Vishay Siliconix  
New Product  
N-Channel Reduced Qg, Fast Switching MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
PRODUCT SUMMARY  
D PWM Optimized for High Efficiency  
D Low Output Voltage  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 100% RG Tested  
APPLICATIONS  
0.0055 @ V = 4.5 V  
17  
14  
GS  
12  
0.008 @ V = 2.5 V  
GS  
D Synchronous Rectifier  
D Point-of-Load Synchronous Buck Converter  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
12  
DS  
GS  
V
V
"8  
T
= 25_C  
= 70_C  
17  
14  
11  
8
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
"50  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.7  
3.0  
2.0  
1.40  
1.6  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.0  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
34  
67  
15  
41  
80  
19  
a
Maximum Junction-to-Ambient (MOSFET)  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71699  
S-03662—Rev. B, 14-Apr-03  
www.vishay.com  
1
Si4866DY  
New Product  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
V
= V , I = 250 mA  
0.6  
V
GS(th)  
DS  
GS D  
= 0 V, V = "8 V  
I
"100  
nA  
DS  
GS  
GSS  
V
= 9.6 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 9.6 V, V = 0 V, T = 70_C  
DS  
GS  
J
a
On-State Drain Current  
I
40  
A
V
w 5 V, V = 4.5 V  
GS  
D(on)  
DS  
0.0045  
0.0055  
0.008  
V
= 4.5 V, I = 17  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 2.5 V, I = 14  
0.0065  
80  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 6 V, I = 17  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
S
= 2.7 A, V = 0 V  
0.70  
1.1  
30  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
21  
4.6  
3.5  
2.3  
28  
32  
82  
35  
60  
Q
gs  
Q
gd  
V
= 6 V, V = 4.5 V, I = 17 A  
nC  
DS  
GS  
D
R
G
1.5  
3.9  
42  
W
t
t
d(on)  
t
r
48  
V
= 6 V, R = 6 W  
L
= 4.5 V, R = 6 W  
GEN G  
DD  
I
D
^ 1 A, V  
Turn-Off Delay Time  
Fall Time  
123  
53  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
= 2.7 A, di/dt = 100 A/ms  
90  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
= 10 thru 2.5 V  
GS  
40  
30  
20  
10  
0
2 V  
T
C
= 125_C  
25_C  
-55_C  
1.5 V  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71699  
S-03662—Rev. B, 14-Apr-03  
www.vishay.com  
2
Si4866DY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.015  
4000  
3200  
2400  
1600  
800  
0.012  
0.009  
C
iss  
V
= 2.5 V  
GS  
C
oss  
0.006  
0.003  
0.000  
V
= 4.5 V  
GS  
C
rss  
0
0
10  
20  
30  
40  
50  
0
2
4
6
8
10  
12  
I
D
- Drain Current (A)  
V
- Drain-to-Source Voltage (V)  
DS  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 6 V  
= 17 A  
V
= 4.5 V  
GS  
DS  
I
D
I = 17 A  
D
0
5
10  
15  
20  
25  
30  
-50  
-25  
0
J
25  
50  
75  
100 125 150  
T
- Junction Temperature (_C)  
Q
g
- Total Gate Charge (nC)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.040  
0.032  
0.024  
0.016  
0.008  
0.000  
50  
T = 150_C  
J
10  
T = 25_C  
J
I
D
= 17 A  
1
0.00  
0
1
2
3
4
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71699  
S-03662—Rev. B, 14-Apr-03  
www.vishay.com  
3
Si4866DY  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Single Pulse Power  
Threshold Voltage  
0.4  
200  
160  
I
D
= 250 mA  
0.2  
-0.0  
-0.2  
-0.4  
-0.6  
120  
80  
40  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
Time (sec)  
T
J
- Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 67_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71699  
S-03662—Rev. B, 14-Apr-03  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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