SI4874BDY [VISHAY]
N-Channel 30-V MOSFET; N沟道30 V MOSFET
| 型号： | SI4874BDY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V MOSFET |
| 文件： | 总5页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4874BDY
Vishay Siliconix
New Product
N-Channel 30-V MOSFET
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFETS
D 100% Rg Tested
0.007 @ V = 10 V
16
14
GS
30
0.0085 @ V = 4.5 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
N-Channel MOSFET
Ordering Information: Si4874BDY—E3
Si4874BDY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
30
V
"20
T
= 25_C
= 70_C
16
13
12
9
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
"50
DM
a
Continuous Source Current (Diode Conduction)
I
2.7
3.0
2.0
1.40
1.6
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.0
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
34
68
16
41
80
21
a
Maximum Junction-to-Ambient (MOSFET)
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
www.vishay.com
1
Si4874BDY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
3.0
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 70_C
5
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0057
0.007
V
= 10 V, I = 16 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 14 A
0.0068
65
0.0085
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 16 A
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 2.7 A, V = 0 V
0.74
1.1
25
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
g
21
9.5
6.5
0.9
16
10
57
15
40
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 16 A
nC
DS
GS
D
R
g
0.4
1.4
25
20
90
25
60
W
t
d(on)
t
r
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN g
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.7 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
= 10 thru 4 V
GS
40
30
20
10
0
T
C
= 125_C
3 V
25_C
−55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
www.vishay.com
2
Si4874BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
4000
3500
3000
2500
2000
1500
1000
500
C
iss
0.008
V
= 4.5 V
GS
V
= 10 V
GS
0.006
0.004
0.002
0.000
C
oss
C
rss
0
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
GS
DS
I
= 16 A
I = 16 A
D
0
6
12
18
24
30
−50 −25
0
25
50
75
100 125 150
T
J
− Junction Temperature (_C)
Q
g
− Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
0.004
0.000
50
T
J
= 150_C
I
D
= 16 A
10
T
J
= 25_C
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
www.vishay.com
3
Si4874BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
Threshold Voltage
0.4
200
160
0.2
I
D
= 250 mA
−0.0
−0.2
−0.4
−0.6
−0.8
−1.0
120
80
40
0
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (sec)
T
J
− Temperature (_C)
Safe Operating Area
100
1 ms
Limited by
DS(on)
r
10
1
10 ms
100 ms
1 s
T
= 25_C
C
10 s
0.1
Single Pulse
dc
0.01
0.1
1
10
100
V
− Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 67_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
www.vishay.com
4
Si4874BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
www.vishay.com
5
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