SI4818DY-T1 [VISHAY]
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode; 双N通道30 -V ( DS ) MOSFET与肖特基二极管型号: | SI4818DY-T1 |
厂家: | VISHAY |
描述: | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
文件: | 总8页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.022 @ V = 10 V
6.3
5.4
9.5
8.2
GS
Channel-1
Channel-2
0.030 @ V = 4.5 V
GS
30
0.0155 @ V = 10 V
GS
0.0205 @ V = 4.5 V
GS
SCHOTTKY PRODUCT SUMMARY
VSD (V)
Diode Forward Voltage
VDS (V)
IF (A)
30
0.50 V @ 1.0 A
2.0
D
1
D
2
D
2
D
2
SO-8
S
1
D
1
D
2
D
2
D
2
1
2
3
4
8
7
6
5
Schottky Diode
G
1
G
G
2
1
S
2
G
2
S
1
S
2
A
Top View
N-Channel 1
MOSFET
N-Channel 2
MOSFET
Ordering Information: Si4818DY
Si4818DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Channel-1
Channel-2
10 secs
Steady State 10 secs Steady State
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
20
DS
V
V
GS
T
= 25_C
= 70_C
6.3
5.4
5.3
4.2
9.5
7.6
7.0
5.6
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
30
40
DM
a
Continuous Source Current (Diode Conduction)
I
1.3
1.4
0.9
0.9
1.0
2.2
2.4
1.5
1.15
1.25
0.80
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
0.64
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Channel-1
Typ Max
Channel-2
Typ Max
Schottky
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
Steady-State
72
90
43
82
25
53
100
30
48
80
28
60
100
35
a
Maximum Junction-to-Ambient
R
thJA
thJC
100
51
125
63
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
1
Si4818DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
0.8
1.0
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
V
GS(th)
DS
GS
D
100
100
1
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= 24 V, V = 0 V
GS
DS
100
15
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
V
DS
= 24 V, V = 0 V, T = 85_C
GS
J
2000
20
30
b
On-State Drain Current
I
V
V
= 5 V, V = 10 V
GS
DS
= 10 V, I = 6.3 A
D
0.018
0.0125
0.024
0.0165
17
0.022
0.0155
0.030
GS
V
= 10 V, I = 9.5 A
D
GS
GS
GS
b
Drain-Source On-State Resistance
r
W
DS(on)
V
V
= 4.5 V, I = 5.4 A
D
= 4.5 V, I = 8.2 A
D
0.0205
V
= 15 V, I = 6.3 A
D
DS
DS
b
Forward Transconductance
g
fs
S
V
V
= 15 V, I = 9.5 A
28
D
I
= 1.3 A, V = 0 V
0.7
1.1
0.5
S
GS
b
Diode Forward Voltage
V
SD
I
S
= 1 A, V = 0 V
GS
0.47
Dynamica
8.0
15
12
23
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Total Gate Charge
Q
g
Channel-1
V
= 15 V, V = 5 V, I = 6.3 A
DS
GS D
1.75
5.3
3.2
4.6
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
gs
gd
Channel-2
V
DS
= 15 V, V = 5 V, I = -9.5 A
GS D
1.5
0.5
6.1
2.6
20
30
10
10
50
80
16
24
60
70
R
g
W
10
15
5
t
d(on)
Channel-1
V
= 15 V, R = 15 W
DD
L
t
r
I
D
^ 1 A, V = 10 V, R = 6 W
GEN G
5
26
44
8
Channel-2
= 15 V, R = 15 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
I
D
1 A, V
= 10 V, R = 6 W
GEN G
t
f
12
30
32
I
= 1.3 A, di/dt = 100 A/ms
= 2.2 A, di/dt = 100 mA/ms
F
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 1.0 A
0.47
0.36
0.004
0.7
0.50
0.42
0.100
10
F
Forward Voltage Drop
V
V
F
I
= 1.0 A, T = 125_C
F
J
V = 30 V
r
V = 30 V, T = 100_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = -30 V, T = 125_C
3.0
20
r
J
V = 10 V
r
C
50
T
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
2
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−1
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 4 V
24
18
12
6
3 V
T
= 125_C
C
25_C
1 V
-55_C
2 V
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistancevs. Drain Current
Capacitance
1000
800
600
400
200
0
0.05
0.04
0.03
0.02
0.01
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
6
rss
0
12
18
24
30
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 6.3 A
V
= 10 V
GS
= 6.3 A
DS
D
I
D
6
4
2
0
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
3
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−1
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
T
= 150_C
J
10
T
= 25_C
J
I
= 6.3 A
D
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
- Gate-to-Source Voltage (V)
GS
8
10
V
- Source-to-Drain Voltage (V)
V
SD
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.4
100
80
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
60
40
20
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
J
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
4
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−1
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−2
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 4 V
32
24
16
8
T
= 125_C
C
25_C
3 V
-55_C
2 V
8
0
0
0
2
4
6
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.030
0.024
0.018
0.012
0.006
0.000
2500
2000
1500
1000
500
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
8
16
24
32
40
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
5
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−2
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
= 9.5 A
V
GS
= 10 V
DS
I
D
I = 9.5 A
D
8
6
4
2
0
0
6
12
18
24
30
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
40
10
T
= 150_C
J
T
= 25_C
J
I
D
= 9.5 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
100
80
0.4
0.2
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
60
40
20
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (_C)
J
Time (sec)
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
6
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−2
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 82_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
7
Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
10
T
= 150_C
J
1
30 V
0.1
T
= 25_C
J
24 V
0.01
0.001
0.0001
1
0.0
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
T
- Temperature (_C)
V - Forward Voltage Drop (V)
F
J
Capacitance
200
160
120
80
40
0
C
oss
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71122
S-31062—Rev. B, 26-May-03
www.vishay.com
8
相关型号:
SI4818DY-T1-E3
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
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