SI4818DY-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4818DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4818DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) (Ω)
ID (A)
6.3
0.022 at VGS = 10 V
0.030 at VGS = 4.5 V
0.0155 at VGS = 10 V
0.0205 at VGS = 4.5 V
•
•
LITTLE FOOT® Plus
Channel-1
Channel-2
5.4
Compliant to RoHS directive 2002/95/EC
30
9.5
8.2
SCHOTTKY PRODUCT SUMMARY
VSD (V)
VDS (V)
IF (A)
Diode Forward Voltage
30
0.50 V at 1.0 A
2.0
D
1
D
2
SO-8
S
1
D
1
D
2
D
2
D
2
1
2
3
4
8
7
6
5
G
1
S
2
Schottky Diode
G
G
2
1
G
2
Top View
S
1
S
2
A
N-Channel 1
MOSFET
N-Channel 2
MOSFET
Ordering Information: Si4818DY-T1-E3 (Lead (Pb)-free)
Si4818DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Channel-1
Channel-2
Parameter
Symbol
VDS
Unit
10 s
SteadyState
30
20
10 s
SteadyState
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TA = 25 °C
TA = 70 °C
6.3
5.4
5.3
4.2
9.5
7.6
7.0
5.6
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
30
40
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
1.3
1.4
0.9
0.9
1.0
2.2
2.4
1.5
1.15
1.25
0.80
Maximum Power Dissipationa
PD
W
0.64
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Typ. Max.
72 90
Channel-2
Schottky
Parameter
Symbol
RthJA
Unit
Typ.
43
Max.
53
Typ.
Max.
60
t ≤ 10 s
48
80
28
Maximum Junction-to-Ambienta
Steady State
Steady State
100
51
125
63
82
25
100
30
100
35
°C/W
RthJC
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71122
S09-0867-Rev. C, 18-May-09
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1
Si4818DY
Vishay Siliconix
MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
1.0
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = 20 V
Gate Threshold Voltage
Gate-Body Leakage
V
100
100
1
nA
VDS = 24 V, VGS = 0 V
100
15
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
VDS = 24 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 10 V
2000
20
30
ID(on)
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 5.4 A
VGS = 4.5 V, ID = 8.2 A
VDS = 15 V, ID = 6.3 A
0.018
0.0125
0.024
0.0165
17
0.022
0.0155
0.030
Drain-Source On-State Resistanceb
RDS(on)
Ω
0.0205
Forward Transconductanceb
Diode Forward Voltageb
gfs
S
V
V
DS = 15 V, ID = 9.5 A
28
IS = 1.3 A, VGS = 0 V
IS = 1 A, VGS = 0 V
0.7
1.1
0.5
VSD
0.47
Dynamica
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
8.0
15
12
23
Qg
Qgs
Qgd
Rg
Total Gate Charge
Channel-1
DS = 15 V, VGS = 5 V, ID = 6.3 A
V
1.75
5.3
3.2
4.6
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
nC
Channel-2
DS = 15 V, VGS = 5 V, ID = - 9.5 A
V
1.5
0.5
6.1
2.6
20
30
10
10
50
80
16
24
60
70
Ω
10
15
5
td(on)
tr
td(off)
tf
Channel-1
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
V
5
26
44
8
Channel-2
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
ns
V
12
30
32
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
trr
Source-Drain Reverse Recovery Time
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
0.47
0.36
0.004
0.7
Max.
0.50
0.42
0.100
10
Unit
IF = 1.0 A
VF
Forward Voltage Drop
V
IF = 1.0 A, TJ = 125 °C
VR = 30 V
Irm
CT
Maximum Reverse Leakage Current
Junction Capacitance
V
R = 30 V, TJ = 100 °C
mA
pF
V
R = - 30 V, TJ = 125 °C
VR = 10 V
3.0
20
50
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71122
S09-0867-Rev. C, 18-May-09
Si4818DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
30
24
18
12
6
V
GS
= 10 V thru 4 V
3 V
T
= 125 °C
C
25 °C
1.5
1 V
- 55 °C
2 V
0
0
0.0
0
2
4
6
8
10
0.5
1.0
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0.00
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
6
12
18
24
30
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
V
D
= 10 V
DS
GS
= 6.3 A
= 6.3 A
I
D
6
4
2
0
0
3
6
9
12
15
- 50 - 25
0
T
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
- Junction Temperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71122
S09-0867-Rev. C, 18-May-09
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3
Si4818DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
0.08
0.06
0.04
0.02
0.00
T
= 150 °C
J
10
T
= 25 °C
J
I
D
= 6.3 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
0.4
100
80
I
D
= 250 µA
0.2
0.0
60
40
20
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
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Document Number: 71122
S09-0867-Rev. C, 18-May-09
Si4818DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
32
24
16
8
40
32
24
16
8
V
GS
= 10 V thru 4 V
T
= 125 °C
C
25 °C
3 V
2 V
- 55 °C
0
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.030
0.024
0.018
0.012
0.006
0.000
2500
2000
1500
1000
500
C
iss
V
GS
= 4.5 V
V
= 10 V
GS
C
oss
C
rss
0
0
8
16
24
32
40
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
Document Number: 71122
S09-0867-Rev. C, 18-May-09
www.vishay.com
5
Si4818DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
DS
V
D
= 10 V
= 9.5 A
GS
= 9.5 A
D
I
6
4
2
0
0
6
12
18
24
30
- 50 - 25
0
T
25
50
75
100 125 150
Q - Total Gate Charge (nC)
g
- Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
40
10
0.05
0.04
0.03
0.02
0.01
0.00
T
= 150 °C
J
T
= 25 °C
J
I
D
= 9.5 A
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
0.4
100
80
I
D
= 250 µA
0.2
0.0
60
40
20
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
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Document Number: 71122
S09-0867-Rev. C, 18-May-09
Si4818DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Notes:
0.2
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 82 °C/W
thJA
(t)
0.02
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71122
S09-0867-Rev. C, 18-May-09
www.vishay.com
7
Si4818DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
T
= 150 °C
J
1
0.1
30 V
24 V
T = 25 °C
J
0.01
0.001
1
0.0001
0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
V
F
- Forward Voltage Drop (V)
T
J
- Temperature (°C)
Forward Voltage Drop
Reverse Current vs. Junction Temperature
200
160
120
80
40
0
C
oss
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Capacitance
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71122.
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Document Number: 71122
S09-0867-Rev. C, 18-May-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Revision: 08-Feb-17
Document Number: 91000
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