SI4820DY-T1 [VISHAY]
N-Channel Reduced Qg, Fast Switching MOSFET; N沟道减少的Qg ，快速开关MOSFET
| 型号： | SI4820DY-T1 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4820DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.0135 @ V = 10 V
10
8
GS
30
0.020 @ V = 4.5 V
GS
D
D
D D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
N-Channel MOSFET
Top View
Ordering Information: Si4820DY
Si4820DY-T1 (with Tape and Reel)
S
S S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
10
DS
GS
V
V
T
= 25_C
= 70_C
A
a, b
Continuous Drain Current (T = 150_C)
I
J
D
T
A
8
A
Pulsed Drain Current (10 ms Pulse Width)
I
50
DM
a, b
Continuous Source Current (Diode Conduction)
I
S
2.3
T
= 25_C
= 70_C
2.5
A
Maximum Power Dissipation
P
W
D
T
A
1.6
Operating Junction and Storage Temperature Range (MOSFET and Schottky)
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
50
a
Maximum Junction-to-Ambient (MOSFET)
R
thJA
C/W
70
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70806
S-03950—Rev. F, 26-May-03
www.vishay.com
2-1
Si4820DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 55_C
25
GS
J
a
On-State Drain Current
I
20
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.0105
0.0135
0.020
V
= 10 V, I = 10 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 5 A
0.0155
28
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 10 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 2.3 A, V = 0 V
0.74
1.2
30
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
20
8
g
Q
Q
V
= 15 V, V = 5.0 V, I = 10 A
nC
gs
gd
DS
GS
D
7
R
g
0.5
1.6
30
15
90
40
80
W
t
15
8
d(on)
t
r
V
DD
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
45
18
50
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.3 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70806
S-03950—Rev. F, 26-May-03
www.vishay.com
2-2
Si4820DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 5 V
40
30
20
10
0
4 V
T
= 125_C
C
25_C
3 V
-55_C
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
3500
2800
2100
1400
700
0.05
0.04
0.03
0.02
0.01
0.00
C
iss
V
GS
= 4.5 V
C
C
oss
V
GS
= 10 V
rss
0
0
10
20
30
40
50
0
5
10
- Drain-to-Source Voltage (V)
DS
15
20
25
30
I
D
- Drain Current (A)
V
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 10 A
V
= 10 V
DS
GS
I
D
I = 10 A
D
6
4
2
0
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 70806
S-03950—Rev. F, 26-May-03
www.vishay.com
2-3
Si4820DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
50
10
0.08
0.06
0.04
0.02
0.00
I
D
= 10 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.2
80
60
40
20
0
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-50
-25
0
25
50
75
100 125 150
0.01
0.10
1.00
Time (sec)
10.00
T
- Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Document Number: 70806
S-03950—Rev. F, 26-May-03
www.vishay.com
2-4
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