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SI4816DY [VISHAY]

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode; 双N通道30 -V （ DS ） MOSFET与肖特基二极管
SI4816DY
型号： SI4816DY
厂家： VISHAY    VISHAY
描述：

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
双N通道30 -V （ DS ） MOSFET与肖特基二极管

肖特基二极管
文件： 总8页 (文件大小：93K)
中文：  中文翻译
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Si4816DY  
Vishay Siliconix  
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode  
PRODUCT SUMMARY  
FEATURES  
V
(V)  
r
(Ω)  
I (A)  
D
DS  
DS(on)  
D LITTLE FOOTr Plus Power MOSFET  
0.022 @ V = 10 V  
6.3  
GS  
Channel-1  
Channel-2  
D 100% R Tested  
g
0.030 @ V = 4.5 V  
5.4  
10  
GS  
30  
0.013 @ V = 10 V  
GS  
0.0185 @ V = 4.5 V  
8.6  
GS  
SCHOTTKY PRODUCT SUMMARY  
V
(V)  
SD  
Diode Forward Voltage  
V
(V)  
I (A)  
DS  
F
D
1
30  
0.50 V @ 1.0 A  
2.0  
SO-8  
G
1
G
A/S  
A/S  
G
D
1
1
2
3
4
8
7
6
5
1
2
2
2
N-Channel 1  
MOSFET  
D /S  
2
1
1
1
S /D  
1
2
D /S  
2
D /S  
2
Schottky Diode  
G
2
Top View  
Ordering Information: Si4816DY  
N-Channel 2  
MOSFET  
Si4816DY-T1 (with Tape and Reel)  
S
2
A
Si4816DY—E3 (Lead (Pb)-Free)  
Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)  
Channel-1  
Channel-2  
10 secs  
Steady State  
10 secs  
Steady State  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
20  
DS  
V
V
GS  
T
= 25_C  
= 70_C  
6.3  
5.4  
5.3  
4.2  
10  
7.7  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
8.2  
6.2  
Pulsed Drain Current  
I
30  
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
I
1.3  
0.9  
2.2  
1.15  
25  
S
b
Avalanche Current  
I
AS  
12  
L = 0.1 mH  
b
Single Pulse Avalanche Energy  
E
AS  
7.2  
31.25  
mJ  
T
= 25_C  
= 70_C  
1.4  
0.9  
1.0  
2.4  
1.5  
1.25  
0.8  
A
a
Maximum Power Dissipation  
P
D
W
T
A
0.64  
Operating Junction and Storage Temperature Range  
T , T  
--55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Channel-1  
Channel-2  
Typ Max  
Schottky  
Typ  
Max  
Typ  
Max  
Parameter  
Symbol  
Unit  
t ≤ 10 sec  
72  
90  
43  
82  
25  
53  
100  
30  
48  
80  
28  
60  
100  
35  
a
Maximum Junction-to-Ambient  
R
thJA  
thJC  
Steady-State  
100  
51  
125  
63  
_C/W  
Maximum Junction-to-Foot (Drain)  
Steady-State  
R
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. Starting date code W46BAA.  
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
1
Si4816DY  
Vishay Siliconix  
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)  
a
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
0.8  
1.0  
2
3
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
V
GS(th)  
DS  
GS D  
100  
100  
1
I
V
= 0 V, V = 20 V  
nA  
GSS  
DS  
DS  
GS  
V
= 30 V, V = 0 V  
GS  
100  
15  
Zero Gate Voltage Drain Current  
I
mA  
A
DSS  
V
DS  
= 30 V, V = 0 V, T = 85_C  
GS J  
2000  
20  
30  
b
On-State Drain Current  
I
V
V
= 5 V, V = 10 V  
GS  
D(on)  
DS  
= 10 V, I = 6.3 A  
D
0.018  
0.0105  
0.024  
0.015  
17  
0.022  
0.013  
0.030  
0.0185  
GS  
V
= 10 V, I = 10 A  
D
GS  
b
Drain-Source On-State Resistance  
r
Ω
DS(on)  
V
V
= 4.5 V, I = 5.4 A  
D
GS  
GS  
= 4.5 V, I = 8.6 A  
D
V
= 15 V, I = 6.3 A  
D
DS  
b
Forward Transconductance  
g
fs  
S
V
V
= 15 V, I = 10 A  
28  
DS  
D
I
= 1.3 A, V = 0 V  
0.7  
1.1  
0.5  
S
GS  
b
Diode Forward Voltage  
V
SD  
I
S
= 1 A, V = 0 V  
GS  
0.47  
a
Dynamic  
8.0  
15  
12  
23  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
Channel-1  
V
= 15 V, V = 5 V, I = 6.3 A  
1.75  
5.3  
3.2  
4.6  
DS  
GS D  
Q
Q
nC  
gs  
Channel-2  
V
= 15 V, V = 5 V, I = --10 A  
DS  
GS D  
gd  
1.5  
0.5  
3.1  
2.6  
20  
30  
10  
10  
50  
80  
16  
24  
60  
70  
R
Ω
g
10  
15  
5
t
d(on)  
Channel-1  
V
= 15 V, R = 15 Ω  
DD  
L
t
r
I
D
≅ 1 A, V = 10 V, R = 6 Ω  
GEN g  
5
26  
44  
8
Channel-2  
= 15 V, R = 15 Ω  
ns  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
V
DD  
L
I
D
≅ 1 A, V  
= 10 V, R = 6 Ω  
GEN g  
t
f
12  
30  
32  
I
= 1.3 A, di/dt = 100 A/ms  
= 2.2 A, di/dt = 100 mA/ms  
F
Source-Drain Reverse Recovery Time  
Notes  
t
rr  
I
F
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.  
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
I
= 1.0 A  
0.47  
0.36  
0.004  
0.7  
0.50  
0.42  
0.100  
10  
F
Forward Voltage Drop  
V
V
F
I
= 1.0 A, T = 125_C  
J
F
V = 30 V  
r
V = 30 V, T = 100_C  
Maximum Reverse Leakage Current  
Junction Capacitance  
I
rm  
mA  
pF  
r
J
V = --30 V, T = 125_C  
3.0  
20  
r
J
V = 10 V  
r
C
50  
T
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
2
Si4816DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
CHANNEL-1  
Output Characteristics  
Transfer Characteristics  
30  
30  
24  
18  
12  
6
V
GS  
= 10 thru 4 V  
24  
18  
12  
6
3 V  
T
= 125_C  
C
25_C  
1 V  
4
-- 5 5 _C  
2 V  
0
0
0
2
6
8
10  
0.0  
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
DS  
-- Drain-to-Source Voltage (V)  
V
-- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
1000  
800  
600  
400  
200  
0
0.030  
0.024  
0.018  
0.012  
0.006  
0.000  
C
iss  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
C
oss  
C
6
rss  
0
12  
18  
24  
30  
0
8
16  
24  
32  
40  
I
D
-- Drain Current (A)  
V
DS  
-- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
I
= 15 V  
= 6.3 A  
V
= 10 V  
GS  
= 6.3 A  
DS  
D
I
D
6
4
2
0
0
3
6
9
12  
15  
--50 --25  
0
25  
50  
75  
100 125 150  
Q
-- Total Gate Charge (nC)  
T -- Junction Temperature (_C)  
J
g
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
3
Si4816DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
CHANNEL-1  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
T
= 150_C  
J
10  
T
= 25_C  
J
I
D
= 10 A  
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
-- Gate-to-Source Voltage (V)  
GS  
8
10  
V
-- Source-to-Drain Voltage (V)  
V
SD  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.6  
0.4  
100  
80  
I
D
= 250 mA  
0.2  
-- 0 . 0  
-- 0 . 2  
-- 0 . 4  
-- 0 . 6  
-- 0 . 8  
-- 1 . 0  
60  
40  
20  
0
--50 --25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
-- Temperature (_C)  
J
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 100_C/W  
thJA  
(t)  
3. T -- T = P  
JM  
Z
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-- 4  
-- 3  
-- 2  
-- 1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
4
Si4816DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
CHANNEL-1  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-- 4  
-- 3  
-- 2  
-- 1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
CHANNEL-2  
Output Characteristics  
Transfer Characteristics  
40  
40  
32  
24  
16  
8
V
GS  
= 10 thru 4 V  
32  
24  
16  
8
T
= 125_C  
C
25_C  
3 V  
-- 5 5 _C  
2 V  
8
0
0
0
2
4
6
10  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
V
DS  
-- Drain-to-Source Voltage (V)  
V
GS  
-- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.030  
0.024  
0.018  
0.012  
0.006  
0.000  
2500  
2000  
1500  
1000  
500  
C
iss  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
0
8
16  
24  
32  
40  
0
6
12  
18  
24  
30  
I
D
-- Drain Current (A)  
V
DS  
-- Drain-to-Source Voltage (V)  
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
5
Si4816DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
CHANNEL-2  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 15 V  
= 9.5 A  
V
GS  
= 10 V  
DS  
I
D
I = 9.5 A  
D
8
6
4
2
0
0
6
12  
18  
24  
30  
--50 --25  
0
25  
50  
75  
100 125 150  
Q
-- Total Gate Charge (nC)  
T -- Junction Temperature (_C)  
J
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
10  
T
= 150_C  
J
T
= 25_C  
J
I
D
= 9.5 A  
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
V
SD  
-- Source-to-Drain Voltage (V)  
V
GS  
-- Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.6  
100  
80  
0.4  
0.2  
I
D
= 250 mA  
-- 0 . 0  
-- 0 . 2  
-- 0 . 4  
-- 0 . 6  
-- 0 . 8  
-- 1 . 0  
60  
40  
20  
0
--50 --25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
-- Temperature (_C)  
J
Time (sec)  
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
6
Si4816DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
CHANNEL-2  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
t
1
0.05  
0.02  
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 82_C/W  
thJA  
(t)  
3. T -- T = P  
JM  
Z
A
DM thJA  
4. Surface Mounted  
Single Pulse  
0.01  
-- 4  
-- 3  
-- 2  
-- 1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-- 4  
-- 3  
-- 2  
-- 1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
7
Si4816DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
SCHOTTKY  
Reverse Current vs. Junction Temperature  
Forward Voltage Drop  
20  
10  
10  
T
= 150_C  
J
1
30 V  
0.1  
T
= 25_C  
J
24 V  
0.01  
0.001  
0.0001  
1
0.0  
0
25  
50  
75  
100  
125  
150  
0.3  
0.6  
0.9  
1.2  
1.5  
T
-- Temperature (_C)  
V -- Forward Voltage Drop (V)  
F
J
Capacitance  
200  
160  
120  
80  
40  
0
C
oss  
0
6
12  
18  
24  
30  
V
DS  
-- Drain-to-Source Voltage (V)  
Document Number: 71121  
S-41697—Rev. E, 20-Sep-04  
www.vishay.com  
8

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