SI3443CDV-T1-E3 [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI3443CDV-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si3443CDV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
ID (A)a
- 4.7
VDS (V)
rDS(on) (Ω)
Qg (Typ)
PWM Optimized
100 % Rg Tested
RoHS
0.060 at VGS = - 4.5 V
0.084 at VGS = - 2.7 V
0.100 at VGS = - 2.5 V
COMPLIANT
- 3.9
- 20
7.53 nC
APPLICATIONS
- 3.4
•
•
•
HDD
Asynchronous Rectification
Load Switch for Portable Devices
TSOP-6
Top View
(4) S
1
2
3
6
3 mm
5
4
(3) G
Marking Code
AL XXX
Lot Traceability
and Date Code
Part # Code
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Unit
Parameter
Symbol
Limit
- 20
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
12
TC = 25 °C
- 5.97
- 4.6
- 4.7b, c
- 3.4b, c
- 20
T
C = 70 °C
A = 25 °C
Continuous Drain Current (TJ = 150 °C)
ID
T
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
- 2.67
- 1.71b, c
3.2
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
2.05
PD
Maximum Power Dissipation
W
2.0b, c
1.28b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
RthJF
Typical
51
Maximum
62.5
Unit
t ≤ 5 s
Steady State
°C/W
32
39
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74495
S-72338-Rev. A, 05-Nov-07
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1
New Product
Si3443CDV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS /TJ
ΔVGS(th) /TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 18.8
3.25
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS , ID = - 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
- 0.6
- 20
- 1.5
100
- 1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 4.7 A
VGS = - 2.7 V, ID = - 3.9 A
VGS = - 2.5 V, ID = - 3.4 A
VDS = - 10 V, ID = - 4.7 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
0.050
0.0692
0.083
15
0.060
0.084
0.100
Drain-Source On-State Resistancea
rDS(on)
Ω
Forward Transconductancea
gfs
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
610
132
105
8.26
7.53
1.53
2.37
8.5
V
DS = - 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
V
DS = - 10 V, VGS = - 5.0 V, ID = - 4.7 A
12.4
11.3
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A
f = 1 MHz
Gate Resistance
12.75
41
td(on)
tr
td(off)
tf
Turn-on Delay Time
27
Rise Time
59
88.5
45
V
DD = - 10 V, RL = 2.12 Ω
ns
ID ≅ - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
30
Fall Time
11
16.5
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = - 1.7 A
- 2.67
- 20
- 1.2
30
A
Pulse Diode Forward Currenta
Body Diode Voltage
- 0.8
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
9
13.5
IF = - 1.7 A, di/dt = 100 A/µs, TJ = 25 °C
15
ns
tb
5.1
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74495
S-72338-Rev. A, 05-Nov-07
New Product
Si3443CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
4.0
3.2
2.4
1.6
0.8
0.0
V
= 5 thru 3.5 V
GS
V
GS
= 3.0 V
16
12
8
V
= 2.5 V
GS
GS
T
C
= 125 °C
C
V
= 2.0 V
= 1.5 V
3
4
T
= - 55 °C
T
= 25 °C
C
V
GS
0
0
1
2
4
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
1200
900
600
300
0
V
GS
= 2.5 V
C
iss
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.4
1.2
1.0
0.8
0.6
I
D
= 4.7 A
V
D
= 4.5 V
GS
= 4.7 A
I
4
3
2
1
0
V
I
= 2.5 V
GS
V
DS
= 10 V
V
DS
= 16 V
= 3.4 A
D
0
2
4
6
8
10
- 50 - 25
0
25
T - Junction Temperature (°C)
J
50
75
100 125 150
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74495
S-72338-Rev. A, 05-Nov-07
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New Product
Si3443CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.15
0.12
0.09
0.06
0.03
0.00
I
D
= 4.7 A
1
T
= 150 °C
J
T = 125 °C
A
T
= 25 °C
J
0.1
0.01
T
A
= 25 °C
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.5
1.3
1.1
0.9
0.7
0.5
50
40
30
20
10
I
D
= 250 µA
0
- 50 - 25
0
25
50
75
100 125 150
0.001 0.01
0.1
1
10
100
1000
T
- Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by r
DS(on)*
10
1
10 ms
100 ms
1 s
10 s
DC
0.1
0.01
T
= 25 °C
A
Single Pulse
0.001
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area
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Document Number: 74495
S-72338-Rev. A, 05-Nov-07
New Product
Si3443CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
4
3
2
1
0
6
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Current Derating*
Power, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74495
S-72338-Rev. A, 05-Nov-07
www.vishay.com
5
New Product
Si3443CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74495.
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Document Number: 74495
S-72338-Rev. A, 05-Nov-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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