SI3443DV-T1-E3 [VISHAY]
Transistor,;
VISHAY 
Si3443DV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFET
D 100% Rg Tested
0.065 @ V = −4.5 V
−4.5
−3.8
−3.7
GS
0.090 @ V = −2.7 V
−20
GS
0.100 @ V = −2.5 V
GS
TSOP-6
Top View
(4) S
1
2
3
6
(3) G
3 mm
5
4
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3443DV-T1—E3 (Lead Free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"12
T
= 25_C
= 70_C
−3.4
−2.7
−4.5
−3.6
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−20
a
continuous Source Current (Diode Conduction)
I
−1.7
2.0
−0.9
1.1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
0.7
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
50
90
22
62.5
110
30
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71741
S-32559—Rev. E, 29-Dec-03
www.vishay.com
1
Si3443DV
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.6
−1.4
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −4.5 V
−15
A
D(on)
GS
V
= −4.5 V, I = −4.5 A
0.050
0.070
0.065
0.090
0.100
GS
D
V
= −2.7 V, I = −3.8 A
a
GS
D
Drain-Source On-State Resistance
r
W
DS(on)
0.080
V
GS
= −2.5 V, I = −3.7 A
D
a
Forward Transconductance
g
V
= −10 V, I = −4.5 A
10
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −1.7 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
7.3
2.0
1.9
15
g
Q
Q
V
= −10 V, V = −4.5 V, I = −4.5 A
nC
gs
gd
DS
GS
D
R
g
3
15
50
W
t
15
32
50
45
35
d(on)
t
r
60
V
= −10 V, R = 10 W
L
GEN g
DD
I
^ −1.0 A, V
= −4.5 V, R = 6 W
D
Turn-Off Delay Time
Fall Time
t
100
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
= −1.7 A, di/dt = 100 A/ms
80
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
3 V
V
GS
= 5 thru 3.5 V
T
= −55_C
C
25_C
16
12
8
125_C
2.5 V
2 V
4
4
1.5 V
4
0
0
0.0
0
1
2
3
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71741
S-32559—Rev. E, 29-Dec-03
www.vishay.com
2
Si3443DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1200
1000
800
600
400
200
0
0.20
C
iss
0.16
V
= 2.7 V
= 4.5 V
GS
0.12
0.08
0.04
0.00
V
GS
= 2.5 V
V
GS
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
= 4.5 V
DS
GS
I
= 4.5 A
I = 4.5 A
D
0
2
4
6
8
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
20
10
I
D
= 4.5 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71741
S-32559—Rev. E, 29-Dec-03
www.vishay.com
3
Si3443DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
25
20
0.3
0.2
I
D
= 250 mA
15
0.1
0.0
10
5
−0.1
−0.2
0
−50 −25
0
25
50
75
100 125 150
−2
−1
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71741
S-32559—Rev. E, 29-Dec-03
www.vishay.com
4
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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