SI3443DV-F095 [FAIRCHILD]
Transistor;
| 型号： | SI3443DV-F095 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2ꢀ5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performanceꢀ
-4 A, -20 Vꢀ RDS(ON) = 0ꢀ065 Ω @ VGS = -4ꢀ5 V
RDS(ON) = 0ꢀ100 Ω @ VGS = -2ꢀ5 V
Fast switching speedꢀ
Low gate charge (7ꢀ2nC typical)ꢀ
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impracticalꢀ
High performance trench technology for extremely
low RDS(ON)
ꢀ
SuperSOTTM-6 package: small footprint (72% smaller
Applications
Load switch
than standard SO-8); low profile (1mm thick)ꢀ
Battery protection
Power management
S
1
6
5
4
D
D
2
3
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
A
±8
Drain Current - Continuous
Drain Current - Pulsed
(Note 1)
-4
-20
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.6
W
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RθJA
°C/W
°C/W
RθJC
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.443
Si3443DV
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
Si3443DV, REV A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
-20
V
VGS = 0 V, ID = -250 µA
Breakdown Voltage Temperature
Coefficient
-16
∆BVDSS
∆TJ
ID = -250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
nA
nA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
-0.4
-10
-0.7
2.5
-1.5
V
VDS = VGS, ID = -250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = -250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -4 A
0.054 0.065
0.076 0.105
0.077 0.100
Ω
V
V
GS = -4.5 V, ID = -4 A, TJ=125°C
GS = -2.5 V, ID = -3.2 A
ID(on)
gFS
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
A
S
Forward Transconductance
VDS = -5 V, ID = -4 A
9
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = -10 V, VGS = 0 V
f = 1.0 MHz
640
180
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -10 V, ID = -1 A
11
19
20
30
42
55
10
ns
ns
V
GS = -4.5 V, RGEN = 6 Ω
26
ns
35
ns
Qg
V
DS = -10 V, ID = -4 A
7.2
1.7
1.6
nC
nC
nC
VGS = -4.5 V,
Qgs
Qgd
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-1.3
-1.2
A
V
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-0.75
Notes:
1ꢀ RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pinsꢀ RθJC is guaranteed by design while RθCA is determined by the user's board designꢀ
a) 78° C/W when mounted on a 1ꢀ0 in2 pad of 2 ozꢀ copperꢀ
b) 156° C/W when mounted on a minimum pad of 2 ozꢀcopperꢀ
2ꢀ Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2ꢀ0%
Si3443DV, REV A
Typical Characteristics
1.6
1.4
1.2
1
20
VGS = -4.5V
-3.5V
-3.0V
VGS = -2.5V
15
-2.5V
-3.0V
10
-3.5V
-2.0V
-4.0V
-4.5V
5
-1.5V
0
0.8
0
1
2
3
4
5
0
4
8
12
16
20
- ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1ꢀ On-Region Characteristicsꢀ
Figure 2ꢀ On-Resistance Variation
with Drain Current and Gate Voltageꢀ
1.5
1.4
1.3
1.2
1.1
1
0.25
0.2
0.15
0.1
0.05
0
ID = - 4A
GS = - 4.5V
ID = -2A
V
TA = 125oC
TA = 25oC
0.9
0.8
0.7
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3ꢀ On-Resistance Variation
with Temperatureꢀ
Figure 4ꢀ On-Resistance Variation
with Gate-to-Source Voltageꢀ
100
10
TA = -55oC
VGS = 0V
VDS = -5V
25oC
125oC
10
1
8
6
4
2
0
T
= 125oC
25oC
-55oC
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
0.8
1.2
1.6
2
2.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5ꢀ Transfer Characteristicsꢀ
Figure 6ꢀ Body Diode Forward Voltage
Variation with Source Current
and Temperatureꢀ
Si3443DV, REV A
Typical Characteristics (continued)
5
1250
1000
750
500
250
0
f = 1 MHz
GS = 0 V
VDS = -5V
-10V
-15V
ID = -4A
V
4
3
2
1
0
CISS
COSS
CRSS
0
2
4
6
8
10
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7ꢀ Gate-Charge Characteristics
Figure 8ꢀ Capacitance Characteristics
100
10
5
4
3
2
1
SINGLE PULSE
R
θJA = 156oC/W
TA = 25oC
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
DC
1
VGS= -4.5V
SINGLE PULSE
RθJA= 156oC/W
TA= 25oC
0.1
0.01
0
0.1
1
10
100
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9ꢀ Maximum Safe Operating Area
Figure 10ꢀ Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
θJA
R
θJA
= 156°C/W
θJA
0.2
0.1
0.1
0.05
P(pk)
t
0.05
1
t
2
0.02
0.01
T
- T = P * R
(t)
θJA
J
A
0.02
0.01
Duty Cycle, D = t / t
1
2
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t
1
, TIME (sec)
Figure 11ꢀ Transient Thermal Response Curveꢀ
Thermal characterization performed using the conditions described in Note 1bꢀ
Transient themal response will change depending on the circuit board designꢀ
Si3443DV, REV A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
相关型号：
SI3443DV-T2
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
VISHAY
SI3443DV-T2-E3
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
SI3443DV-T3
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
VISHAY
SI3443DV-T3-E3
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
SI3443DVL99Z
Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明