SI3443DV [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | SI3443DV |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93795B
Si3443DV
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l -2.5V Rated
A
1
2
6
D
D
D
VDSS = -20V
5
D
3
4
G
S
R
DS(on) = 0.065Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It'suniquethermaldesignandRDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-4.4
-3.5
A
-20
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
31
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
VGS
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
RθJA
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01/13/03
Si3443DV
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.034 0.065
––– 0.053 0.090
––– 0.060 0.100
-0.60 ––– -1.2
VGS = -4.5V, ID = -4.4A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = -2.7V, ID = -3.7A
VGS = -2.5V, ID = -3.5A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.4 A
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
–––
12 –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
V
DS = -20V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 70°C
GS = -12V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
IGSS
VGS = 12V
ID = -4.4A
Qg
–––
–––
–––
–––
–––
–––
–––
11
15
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.2 –––
2.9 –––
nC VDS = -10V
VGS = -4.5V
12
33
50
60
VDD = -10V, VGS = -4.5V
ID = -1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
70 100
72 100
RG = 6.0 Ω
RD = 10 Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1079 –––
––– 220 –––
––– 152 –––
Output Capacitance
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-2.0
-20
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, IF = -1.7A
––– 51
––– 30
77
44
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Surface mounted on FR-4 board, t ≤ 5secꢀ
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%ꢀ
Starting TJ = 25°C, L = 6.8mH
RG = 25Ω, IAS = -3.0A.
2
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Si3443DV
100
10
1
100
10
1
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM-1.50V
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-5.6A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
10
J
1
V
= -15V
DS
V
=-4.5V
20µs PULSE WIDTH
GS
0.1
1.5
2.0
2.5
3.0 3.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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Si3443DV
15
12
9
1600
I
D
=
-4.5A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
ds
oss
gd
1200
800
400
0
V
=-10V
DS
C
iss
6
3
C
C
oss
rss
0
1
10
100
0
4
8
12
16
20
24
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
1
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
2.0
0.1
0.0
0.1
0.1
0.4
0.8
1.2
1.6
2.4
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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Si3443DV
5.0
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
I
D
TOP
-1.3A
-2.4A
BOTTOM -3.0A
25
50
75
100
125
150
25
50
75
100
125
150
°
°
Starting T , Junction Temperature ( C)
T , Case Temperature ( C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Si3443DV
Package Outline
TSOP-6
Part Marking Information
TSOP-6
6
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Si3443DV
Tape & Reel Information
TSOP-6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/03
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