IRFR420TRPBF [VISHAY]
Power MOSFET; 功率MOSFET型号: | IRFR420TRPBF |
厂家: | VISHAY |
描述: | Power MOSFET |
文件: | 总8页 (文件大小:1884K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
500
Available
• Repetitive Avalanche Rated
RDS(on) (Ω)
VGS = 10 V
3.0
RoHS*
COMPLIANT
• Surface Mount (IRFR420/SiHFR420)
Qg (Max.) (nC)
Qgs (nC)
19
3.3
13
• Straight Lead (IRFU420/SiHFU420)
• Available in Tape and Reel
• Fast Switching
Qgd (nC)
Configuration
Single
D
• Ease of Paralleling
• Lead (Pb)-free Available
DPAK
IPAK
(TO-252)
(TO-251)
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IRFR120TRLPbFa
SiHFR120TL-E3a
IRFR120TRLa
IPAK (TO-251)
IRFU420PbF
SiHFU420-E3
IRFU420
IRFR420PbF
SiHFR420-E3
IRFR420
IRFR420TRPbFa
SiHFR420T-E3a
IRFR420TRa
Lead (Pb)-free
SnPb
SiHFR420
SiHFR420Ta
SiHFR120TLa
SiHFU420
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
500
20
V
VGS
T
C = 25 °C
2.4
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
1.5
A
Pulsed Drain Currenta
IDM
8.0
Linear Derating Factor
0.33
0.020
400
2.4
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
EAS
IAR
mJ
A
EAR
4.2
mJ
TC = 25 °C
TA = 25 °C
42
PD
W
2.5
dV/dt
3.5
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
1
WORK-IN-PROGRESS
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 55 to + 150
260d
UNIT
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 124 mH, RG = 25 Ω, IAS = 2.4 A (see fig. 12).
c. ISD ≤ 2.4 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
3.0
Note
a. When mounted on 1” square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
V
V/°C
V
-
0.59
-
2.0
-
-
-
-
-
-
4.0
100
25
250
3.0
-
VGS
VDS = 500 V, VGS = 0 V
DS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID =1.4 Ab
VDS = 50 V, ID = 1.4 A
=
20 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
1.5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
360
92
37
-
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
V
pF
nC
19
3.3
13
-
ID = 2.1 A, VDS = 400 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
8.0
8.6
33
16
-
V
DD = 250 V, ID = 2.1 A,
ns
R
G = 18 Ω, RD = 120 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
6 mm (0.25") from
package and center of
die contact
nH
G
-
S
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Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
2.4
8.0
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 2.4 A, VGS = 0 Vb
-
-
-
-
1.6
520
1.4
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
260
0.70
ns
µC
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 -Typical Output Characteristics, TC = 150 °C
Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
3
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
RG
+
-
VDD
VDS
IAS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
5
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode
forward drop
Inductor current
I
SD
Ripple ≤ 5 %
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 -For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91275.
Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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