IRFR430A [KERSEMI]
Power MOSFET; 功率MOSFET
| 型号： | IRFR430A |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Power MOSFET |
| 文件： | 总7页 (文件大小：2318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Power MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
500
Available
RDS(on) (Ω)
VGS = 10 V
1.7
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Qg (Max.) (nC)
24
6.5
COMPLIANT
Q
Q
gs (nC)
gd (nC)
13
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Configuration
Single
• Effective Coss Specified
• Lead (Pb)-free Available
D
DPAK
IPAK
(TO-252)
(TO-251)
APPLICATIONS
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR430APbF
SiHFR430A-E3
IRFR430A
DPAK (TO-252)
IRFR430ATRPbFa
SiHFR430AT-E3a
IRFR430ATRa
DPAK (TO-252)
IRFR430ATRLPbFa
SiHFR430ATL-E3a
IRFR430ATRLa
SiHFR430ATLa
DPAK (TO-252)
IRFR430ATRRPbFa
SiHFR430ATR-E3a
IRFR430ATRRa
SiHFR430ATRa
IPAK (TO-251)
IRFU430APbF
SiHFU430A-E3
IRFU430A
Lead (Pb)-free
SnPb
SiHFR430A
SiHFR430ATa
SiHFU430A
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
500
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
30
TC = 25 °C
TC =100°C
5.0
Continuous Drain Current
VGS at 10 V
ID
3.2
A
Pulsed Drain Currenta
IDM
20
Linear Derating Factor
0.91
130
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
5.0
EAR
11
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
110
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
3.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 11 mH, RG = 25 Ω, IAS = 5.0 A (see fig. 12).
c. ISD ≤ 5.0 A, dI/dt ≤ 320 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
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1
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.50
-
-
RthCS
°C/W
1.1
RthJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
V
V/°C
V
-
0.60
-
2.0
-
-
-
-
-
-
4.5
100
25
250
1.7
-
VGS
VDS = 500 V, VGS = 0 V
DS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.0 Ab
=
30 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = 50 V, ID = 3.0 A
2.3
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
490
75
4.5
750
25
51
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
-
-
pF
pF
nC
Reverse Transfer Capacitance
V
DS = 1.0 V, f = 1.0 MHz
-
Output Capacitance
Coss
VGS = 10 V
VGS = 10 V
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
-
Effective Output Capacitance
Total Gate Charge
Coss eff.
Qg
-
24
6.5
13
-
ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
-
-
Turn-On Delay Time
Rise Time
8.7
27
17
16
-
VDD = 250 V, ID = 5.0 A,
G = 15 Ω, RD = 50 Ω, see fig. 10b
ns
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
5.0
20
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
-
-
-
-
1.5
620
2.1
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
410
1.4
ns
µC
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
.
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100.00
10.00
1.00
VGS
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
T
= 150°C
J
BOTTOM 4.5V
1
0.1
T
= 25°C
J
4.5V
0.10
0.01
0.001
20μs PULSE WIDTH
Tj = 25°C
V
= 100V
DS
20μs PULSE WIDTH
0.01
0.1
1
10
100
4.0
6.0
V
8.0
10.0
12.0
14.0
16.0
V
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
DS
GS
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
10
3.0
VGS
5.0A
=
I
D
TOP
15V
10V
8.0V
7.0V
2.5
2.0
1.5
1.0
0.5
0.0
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.01
20μs PULSE WIDTH
Tj = 150°C
V
= 10V
GS
0.1
1
10
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
T , Junction Temperature
(
C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
100
10000
V
C
C
= 0V,
f = 1 MHZ
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
10
Coss
Crss
°
T = 25
C
°
T = 150
J
C
J
1
1
V
= 0 V
GS
0.1
1
10
100
1000
0.2
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
12
D
I
= 5.0A
OPERATION IN THIS AREA
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
LIMITED BY R (on)
DS
10
7
10
1
100μsec
1msec
5
2
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0
0
4
8
12
16
20
10
100
1000
10000
Q
, Total Gate Charge (nC)
G
V
, Drain-toSource Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
RD
5.5
4.4
3.3
2.2
1.1
0.0
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
25
50
T
75
100
125
150
10 %
VGS
°
C)
, Case Temperature
(
C
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T
IAS
RG
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
250
200
150
100
50
5.0
4.5
4.0
3.5
3.0
2.5
I
D
TOP
2.2A
3.2A
5.0A
BOTTOM
I
= 250μA
D
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
°
J
Starting Tj, Junction Temperature
( C)
Fig. 12d - Threshold Voltage vs. Temperature
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
ID
Fig. 13a - Basic Gate Charge Waveform
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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
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相关型号：
IRFR430ATRLPBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
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