IRFR430APBF [VISHAY]
Power MOSFET; 功率MOSFET型号: | IRFR430APBF |
厂家: | VISHAY |
描述: | Power MOSFET |
文件: | 总8页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
Power MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
500
Available
R
DS(on) (Ω)
VGS = 10 V
1.7
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Qg (Max.) (nC)
24
6.5
COMPLIANT
Q
Q
gs (nC)
gd (nC)
13
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Configuration
Single
• Effective Coss Specified
• Lead (Pb)-free Available
D
DPAK
IPAK
(TO-252)
(TO-251)
APPLICATIONS
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR430APbF
SiHFR430A-E3
IRFR430A
DPAK (TO-252)
IRFR430ATRPbFa
SiHFR430AT-E3a
IRFR430ATRa
DPAK (TO-252)
IRFR430ATRLPbFa
SiHFR430ATL-E3a
IRFR430ATRLa
SiHFR430ATLa
DPAK (TO-252)
IRFR430ATRRPbFa
SiHFR430ATR-E3a
IRFR430ATRRa
SiHFR430ATRa
IPAK (TO-251)
IRFU430APbF
SiHFU430A-E3
IRFU430A
Lead (Pb)-free
SnPb
SiHFR430A
SiHFR430ATa
SiHFU430A
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
500
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
30
TC = 25 °C
TC =100°C
5.0
Continuous Drain Current
VGS at 10 V
ID
3.2
A
Pulsed Drain Currenta
IDM
20
Linear Derating Factor
0.91
130
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
5.0
EAR
11
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
110
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
3.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 11 mH, RG = 25 Ω, IAS = 5.0 A (see fig. 12).
c. ISD ≤ 5.0 A, dI/dt ≤ 320 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
www.vishay.com
1
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.50
-
-
RthCS
°C/W
1.1
RthJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.60
-
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
4.5
100
25
250
1.7
-
VGS
VDS = 500 V, VGS = 0 V
DS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.0 Ab
VDS = 50 V, ID = 3.0 A
=
30 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
2.3
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
490
75
4.5
750
25
51
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
V
-
-
pF
pF
nC
Reverse Transfer Capacitance
V
DS = 1.0 V, f = 1.0 MHz
-
Output Capacitance
Coss
V
V
GS = 10 V
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
-
Effective Output Capacitance
Total Gate Charge
C
oss eff.
Qg
-
24
6.5
13
-
ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
GS = 10 V
-
-
Turn-On Delay Time
Rise Time
8.7
27
17
16
-
V
DD = 250 V, ID = 5.0 A,
ns
R
G = 15 Ω, RD = 50 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
5.0
20
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
-
-
-
-
1.5
620
2.1
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
410
1.4
ns
µC
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
.
www.vishay.com
2
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100.00
10.00
1.00
VGS
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
T
= 150°C
J
BOTTOM 4.5V
1
0.1
T
= 25°C
J
4.5V
0.10
0.01
0.001
20μs PULSE WIDTH
Tj = 25°C
V
= 100V
DS
20μs PULSE WIDTH
0.01
0.1
1
10
100
4.0
6.0
V
8.0
10.0
12.0
14.0
16.0
V
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
DS
GS
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
10
3.0
VGS
5.0A
=
I
D
TOP
15V
10V
8.0V
7.0V
2.5
2.0
1.5
1.0
0.5
0.0
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.01
20μs PULSE WIDTH
Tj = 150°C
V
= 10V
GS
0.1
1
10
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
T , Junction Temperature
(
C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
www.vishay.com
3
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
100
10000
V
C
C
= 0V,
f = 1 MHZ
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
10
Coss
Crss
°
T = 25
C
°
T = 150
J
C
J
1
1
V
= 0 V
GS
0.1
1
10
100
1000
0.2
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
12
D
I
= 5.0A
OPERATION IN THIS AREA
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
LIMITED BY R (on)
DS
10
7
10
1
100μsec
1msec
5
2
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0
0
4
8
12
16
20
10
100
1000
10000
Q
, Total Gate Charge (nC)
G
V
, Drain-toSource Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
RD
5.5
4.4
3.3
2.2
1.1
0.0
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
25
50
T
75
100
125
150
10 %
VGS
°
C)
, Case Temperature
(
C
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T
IAS
RG
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
5
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
250
200
150
100
50
5.0
4.5
4.0
3.5
3.0
2.5
I
D
TOP
2.2A
3.2A
5.0A
BOTTOM
I
= 250μA
D
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
Fig. 12d - Threshold Voltage vs. Temperature
°
J
Starting Tj, Junction Temperature
( C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
ID
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91276.
Document Number: 91276
S-81366-Rev. A, 07-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
IRFR430ATRLPBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRFR430ATRPBF
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明