IRFR430APBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFR430APBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95076B
SMPS MOSFET
IRFR430APbF
IRFU430APbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
l Lead-Free
VDSS
RDS(on) max
ID
500V
1.7Ω
5.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR430A
I-Pak
IRFU430A
Absolute Maximum Ratings
Parameter
Max.
5.0
3.2
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
20
PD @TC = 25°C
Power Dissipation
110
W
W/°C
V
Linear Derating Factor
0.91
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
3.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
Units
mJ
EAS
IAR
–––
–––
–––
130
5.0
11
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.1
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
–––
62
°C/W
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1
03/02/07
IRFR/U430APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500 ––– –––
––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 1.7
2.0 ––– 4.5
Ω
V
VGS = 10V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
gfs
2.3 ––– –––
S
Qg
––– ––– 24
––– ––– 6.5
––– ––– 13
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
8.7 –––
27 –––
17 –––
16 –––
VDD = 250V
ID = 5.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 15Ω
RD = 50Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 490 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
75 –––
4.5 –––
VDS = 25V
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 750 –––
–––
–––
25 –––
51 –––
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
5.0
20
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 410 620
––– 1.4 2.1
V
TJ = 25°C, IS = 5.0A, VGS = 0V
ns
TJ = 25°C, IF = 5.0A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 11mH
as Coss while VDS is rising from 0 to 80% VDSS
.
RG = 25Ω, IAS = 5.0A. (See Figure 12)
ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
2
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IRFR/U430APbF
100
10
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
1
1
0.1
4.5V
4.5V
0.1
0.01
0.01
0.001
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100.00
5.0A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
10.00
1.00
0.10
0.01
T
= 150°C
J
T
= 25°C
J
V
= 100V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
4.0
6.0
V
8.0
10.0
12.0
14.0
16.0
T , Junction Temperature
(
C)
J
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U430APbF
12
10
7
10000
D
I
= 5.0A
V
C
= 0V,
f = 1 MHZ
V
V
V
= 400V
= 250V
= 100V
GS
DS
DS
DS
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
Coss
Crss
5
2
1
0
1
10
100
1000
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1
100µsec
1msec
°
T = 25
C
°
T = 150
J
C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1000
V
= 0 V
GS
0.1
0.1
0.2
0.5
0.8
1.1
1.4
10
100
10000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U430APbF
5.5
4.4
3.3
2.2
1.1
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
C)
, Case Temperature
(
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U430APbF
250
200
150
100
50
15V
I
D
TOP
2.2A
3.2A
5.0A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
°
( C)
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
5.0
4.5
4.0
3.5
3.0
2.5
Q
Q
GD
GS
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25
50
75 100 125 150
V
GS
T
, Temperature ( °C )
J
3mA
I
I
D
G
Fig 14. Threshold Voltage Vs. Temperature
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U430APbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U430APbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 = 2001
WEEK 16
IRFR120
116A
12
34
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "Lead-F ree"
"P" in assembly line position indicates
"L ead-F ree" qualification to the cons umer-level
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
P = DE S IGNAT E S LE AD-F RE E
PRODUCT (OPTIONAL)
LOGO
P = DE S IGNAT E S LE AD-F RE E
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 16
A = AS S E MB L Y S IT E CODE
8
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IRFR/U430APbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBE R
DAT E CODE
E XAMPLE: T HIS IS AN IRFU 120
INT ERNAT IONAL
RECT IFIER
LOGO
WITH AS SE MBLY
LOT CODE 5678
AS S EMBLE D ON WW 19, 2001
IN THE ASS E MB LY LINE "A"
IRF U120
YE AR 1 = 2001
WEE K 19
119A
78
56
LINE A
AS S E MB LY
LOT CODE
Note: "P" in as s embly line pos ition
indicates Lead-Free"
OR
PART NUMB ER
DAT E CODE
P = DES IGNAT E S LE AD-F R EE
PRODUCT (OPTIONAL)
INT ERNAT IONAL
RECTIFIE R
LOGO
IRF U120
56 78
YEAR 1 = 2001
AS S E MB LY
LOT CODE
WE EK 19
A = AS S E MB LY S IT E CODE
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9
IRFR/U430APbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2007
10
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相关型号：
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Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
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