HFA08TB60PBF [VISHAY]
Ultrafast Soft Recovery Diode, 8 A; 超快软恢复二极管，一个8
| 型号： | HFA08TB60PBF |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast Soft Recovery Diode, 8 A |
| 文件： | 总6页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFA08TB60PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
Available
• Very low IRRM
• Very low Qrr
RoHS*
COMPLIANT
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
Base
cathode
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
1
3
Cathode Anode
• Reduced parts count
DESCRIPTION
TO-220AC
HFA08TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the HFA08TB60
is especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
PRODUCT SUMMARY
VR
VF at 8 A at 25 °C
IF(AV)
600 V
1.7 V
8 A
t
rr (typical)
TJ (maximum)
rr (typical)
18 ns
150 °C
65 nC
240 A/µs
5.0 A
Q
dI(rec)M/dt (typical)
IRRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
8
IFSM
IFRM
60
A
Maximum repetitive forward current
24
TC = 25 °C
36
14
Maximum power dissipation
PD
W
T
C = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94047
Revision: 25-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
HFA08TB60PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
-
-
IF = 8.0 A
IF = 16 A
-
-
-
-
-
-
-
1.4
1.7
1.4
0.3
100
10
1.7
2.1
1.7
5.0
500
25
V
Maximum forward voltage
VFM
See fig. 1
IF = 8.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
µA
TJ = 125 °C, VR = 0.8 x VR rated
Junction capacitance
Series inductance
CT
LS
VR = 200 V
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
-
-
18
Reverse recovery time
trr1
37
55
90
5.0
8.0
138
360
-
ns
trr2
TJ = 125 °C
55
IRRM1
IRRM2
Qrr1
TJ = 25 °C
3.5
4.5
65
Peak recovery current
A
IF = 8.0 A
TJ = 125 °C
dIF/dt = 200 A/µs
TJ = 25 °C
V
R = 200 V
Reverse recovery charge
nC
Qrr2
TJ = 125 °C
124
240
210
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
Peak rate of fall of recovery
current during tb
A/µs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
-
-
3.5
80
-
Thermal resistance,
junction to ambient
Typical socket mount
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
HFA08TB60
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94047
Revision: 25-Jul-08
HFA08TB60PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
100
10
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1
1
TJ = 25 °C
TJ = 150 °C
0.01
TJ = 125 °C
TJ = 25 °C
0.001
0.1
0.4
0
100
200
300
400
500
600
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94047
Revision: 25-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
HFA08TB60PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
80
500
VR = 200 V
IF = 16 A
IF = 8 A
IF = 4 A
TJ = 125 °C
TJ = 25 °C
400
300
200
100
0
60
40
20
0
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
20
10 000
1000
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
15
10
5
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
1000
100
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94047
Revision: 25-Jul-08
HFA08TB60PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
V
R = 200 V
0.01 Ω
L = 70 µH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
through zero crossing
and IRRM
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95221
http://www.vishay.com/doc?95224
Part marking information
Document Number: 94047
Revision: 25-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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