HFA08TB60STRLPBF [INFINEON]
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| 型号： | HFA08TB60STRLPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 整流二极管 局域网 超快软恢复二极管 快速软恢复二极管 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD -2.341 rev. A 11/00
HFA08TB60
TM
Ultrafast, Soft Recovery Diode
HEXFRED
BASE
CATHODE
VR = 600V
VF(typ.)* = 1.4V
IF(AV) = 8.0A
Qrr (typ.)= 65nC
IRRM = 5.0A
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
4
2
• Very Low Qrr
• Specified at Operating Conditions
Benefits
trr(typ.) = 18ns
di(rec)M/dt (typ.) = 240A/µs
1
3
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
CATHODE
ANODE
2
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
TO-220AC
Absolute Maximum Ratings
Parameter
Max
600
8.0
60
24
36
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
IF @ TC = 100°C
IFSM
IFRM
A
PD @ TC = 25°C
W
C
PD @ TC = 100°C
14
TJ
TSTG
- 55 to +150
Storage Temperature Range
* 125°C
14/8/97
HFA08TB60
Bulletin PD-2.341 rev. A 10/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
V
V
IR = 100µA
IF = 8.0A
IF = 16A
1.4 1.7
1.7 2.1
1.4 1.7
0.3 5.0
100 500
See Fig. 1
See Fig. 2
Max Forward Voltage
I
F = 8.0A, TJ = 125°C
VR = VR Rated
IRM
CT
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
µA
pF
nH
TJ = 125°C, VR = 0.8 x VR RatedD Rated
VR = 200V See Fig. 3
10
25
Measured lead to lead 5mm from
package body
LS
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Reverse Recovery Time
See Fig. 5, 6 & 16
Min Typ Max Units
Test Conditions
trr
18
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
37
55
55
90
ns TJ = 25°C
TJ = 125°C
trr2
IF = 8.0A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
3.5 5.0
4.5 8.0
65 138
124 360
240
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
210
See Fig. 11 & 12
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
Tlead!
Lead Temperature
300
3.5
80
°C
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
thJC
"
thJA
K/W
#
0.5
2.0
0.07
thCS
g
(oz)
Wt
Weight
6.0
5.0
12
10
Kg-cm
lbf•in
Mounting Torque
!
"
#
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
100
10
1
1000
100
10
T = 150°C
J
T
J
= 125°C
1
0.1
T = 25°C
0.01
0.001
J
T = 150°C
J
T = 125°C
J
0
100
200
300
400
500
600
T = 25°C
J
Reverse Voltage - V (V)
Fig. 2 - Typical Reverse CurrentRvs. Reverse
Voltage
A
100
T = 25°C
J
10
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
1
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
0.01
0.1
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t
x
/ t
1 2
thJC
2. Peak T =P
Z
+ T
C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFA08TB60
Bulletin PD-2.341 rev. A 10/00
20
15
10
5
80
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
F
F
I
I
= 8.0A
= 4.0A
60
40
20
0
I
F
= 16A
= 8.0A
= 4.0A
I
F
I
F
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
10000
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
I
I
I
= 16A
= 8.0A
= 4.0A
F
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
F
300
200
100
0
F
F
1000
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
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HFA08TB60
Bulletin PD-2.341 rev. A 10/00
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
RRM
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
4. Qrr - Area under curve defined by trr
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
2. IRRM - Peak reverse recovery current
Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
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5
HFA08TB60
Bulletin PD-2.341 rev. A 10/00
Conforms to JEDEC Outline TO-220AC
Dimensions in millimeters and inches
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IRCANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
6
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Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
VISHAY
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