HFA08TB60S [INFINEON]

Ultrafast, Soft Recovery Diode; 超快,软恢复二极管
HFA08TB60S
型号: HFA08TB60S
厂家: Infineon    Infineon
描述:

Ultrafast, Soft Recovery Diode
超快,软恢复二极管

二极管 软恢复二极管
文件: 总7页 (文件大小:198K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin PD -20607 rev. B 12/00  
HFA08TB60S  
TM  
HEXFRED  
Ultrafast, Soft Recovery Diode  
Features  
VR = 600V  
VF(typ.)* = 1.4V  
F(AV) = 8.0A  
Qrr (typ.)= 65nC  
(K)  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
BASE  
+
2
I
• Very Low Qrr  
• Specified at Operating Conditions  
IRRM = 5.0A  
trr(typ.) = 18ns  
di(rec)M/dt (typ.) = 240A/µs  
Benefits  
3
_
1
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
(N/C)  
(A)  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
Description  
International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.  
Employing the latest in epitaxial construction and advanced processing techniques  
it features a superb combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available. With basic ratings of 600  
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for  
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast  
recovery time, the HEXFRED product line features extremely low values of peak  
recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the  
D2 Pak  
tb portion of recovery. The HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in both the diode and the  
switching transistor. These HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is  
ideally suited for applications in power supplies (PFC Boost diode) and power  
conversion systems (such as inverters), motor drives, and many other similar  
applications where high speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VR  
Cathode-to-AnodeVoltage  
600  
8.0  
60  
V
IF @ TC = 100°C  
IFSM  
IFRM  
ContinuousForwardCurrent  
SinglePulseForwardCurrent  
MaximumRepetitiveForwardCurrent  
MaximumPowerDissipation  
A
24  
36  
14  
PD @ TC = 25°C  
W
PD @ TC = 100°C MaximumPowerDissipation  
TJ  
TSTG  
OperatingJunctionand  
StorageTemperatureRange  
-55 to +150  
°C  
* 125°C  
1
HFA08TB60S  
Bulletin PD-20607 rev. B 11/00  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
VBR  
VFM  
Cathode Anode Breakdown Voltage  
600 ––– –––  
––– 1.4 1.7  
––– 1.7 2.1  
––– 1.4 1.7  
––– 0.3 5.0  
––– 100 500  
V
V
IR = 100µA  
IF = 8.0A  
IF = 16A  
See Fig. 1  
See Fig. 2  
Max Forward Voltage  
I
F = 8.0A, TJ = 125°C  
VR = VR Rated  
TJ = 125°C, VR = 0.8 x VR RatedD Rated  
See Fig. 3  
VR = 200V  
IRM  
Max Reverse Leakage Current  
µA  
CT  
LS  
Junction Capacitance  
Series Inductance  
––– 10  
25  
pF  
Measured lead to lead 5mm from  
package body  
––– 8.0 –––  
nH  
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Reverse Recovery Time  
See Fig. 5, 6  
Min. Typ. Max. Units  
Test Conditions  
trr  
––– 18 –––  
IF = 1.0A, dif/dt = 200A/µs, VR = 30V  
trr1  
––– 37  
––– 55  
55  
90  
ns TJ = 25°C  
TJ = 125°C  
trr2  
IF = 8.0A  
VR = 200V  
IRRM1  
IRRM2  
Qrr1  
Peak Recovery Current  
––– 3.5 5.0  
––– 4.5 8.0  
––– 65 138  
––– 124 360  
––– 240 –––  
––– 210 –––  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
A
Reverse Recovery Charge  
See Fig. 7  
nC  
Qrr2  
di(rec)M/dt1  
di(rec)M/dt2  
dif/dt = 200A/µs  
PeakRateofFallofRecoveryCurrent  
A/µs  
See Fig. 8  
During tb  
Thermal - Mechanical Characteristics  
Parameter  
Min.  
Typ.  
––––  
––––  
––––  
2.0  
Max.  
300  
3.5  
80  
––––  
––––  
Units  
Tlead  
RthJC  
RthJA  
Wt  
!
"
LeadTemperature  
––––  
––––  
––––  
––––  
––––  
°C  
ThermalResistance,JunctiontoCase  
ThermalResistance,JunctiontoAmbient  
Weight  
K/W  
g
(oz)  
0.07  
!
"
0.063 in. from Case (1.6mm) for 10 sec  
TypicalSocketMount  
2
HFA08TB60S  
Bulletin PD-20607 rev. B 11/00  
1000  
100  
10  
100  
10  
1
T = 150°C  
J
T = 125°C  
J
1
0.1  
T = 25°C  
J
0.01  
0.001  
T = 150°C  
J
T = 125°C  
J
0
100  
200  
300  
400  
500  
600  
T = 25°C  
J
Reverse Voltage - V (V)  
Fig. 2 - Typical Reverse Current Rvs. Reverse  
Voltage  
A
100  
T = 25°C  
J
10  
0.1  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
Forward Voltage Drop - V  
(V)  
FM  
1
Fig. 1 - Maximum Forward Voltage Drop  
1
10  
100  
1000  
vs. Instantaneous Forward Current  
Reverse Voltage - V (V)  
Fig. 3 - Typical Junction CapaRcitance vs.  
Reverse Voltage  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
0.02  
P
DM  
SINGLE PULSE  
0.01  
0.1  
(THERMAL RESPONSE)  
t
1
t
2
Notes:  
1. Duty factor D =  
t
x
/ t  
1 2  
thJC  
2. Peak T = P  
Z
+ T  
C
J
DM  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
, Rectangular Pulse Duration (sec)  
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
3
HFA08TB60S  
Bulletin PD-20607 rev. B 11/00  
20  
15  
10  
5
80  
60  
40  
20  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
= 16A  
F
F
F
I
I
= 8.0A  
= 4.0A  
I
= 16A  
= 8.0A  
= 4.0A  
F
I
F
I
F
VR = 200V  
TJ = 125°C  
TJ = 25°C  
0
100  
0
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 6 - Typical Recovery Current vs. dif/dt  
Fig. 5 - Typical Reverse Recovery vs. dif/dt  
10000  
500  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
400  
I
I
I
= 16A  
= 8.0A  
= 4.0A  
F
I
I
I
= 16A  
= 8.0A  
= 4.0A  
F
F
F
300  
200  
100  
0
F
F
1000  
100  
100  
1000  
100  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 7 - Typical Stored Charge vs. dif/dt  
Fig. 8 - Typical di(rec)M/dt vs. dif/dt  
4
HFA08TB60S  
Bulletin PD-20607 rev. B 11/00  
3
t
rr  
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT  
4
Q
rr  
V
= 200V  
2
R
I
0.5  
I
RRM  
RRM  
5
di(rec)M/dt  
0.01  
0.75 I  
RRM  
L = 70µH  
1
di /dt  
f
D.U.T.  
1. dif/dt - Rate of change of current  
through zero crossing  
4. Qrr - Area under curve defined by trr  
D
and IRRM  
dif/dt  
trr X IRRM  
ADJUST  
IRFP250  
G
2. IRRM - Peak reverse recovery current  
Qrr =  
2
3. trr - Reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current  
S
5. di(rec)M/dt - Peak rate of change of  
current during tb portion of trr  
Fig. 10 - Reverse Recovery Waveform and  
Fig. 9 - Reverse Recovery Parameter Test  
Definitions  
Circuit  
5
HFA08TB60S  
Bulletin PD-20607 rev. B 11/00  
Outline Table  
4.69 (0.18)  
4.20 (0.16)  
10.16 (0.40)  
REF.  
1.32 (0.05)  
1.22 (0.05)  
6.47 (0.25)  
6.18 (0.24)  
93°  
15.49 (0.61)  
14.73 (0.58)  
5.28 (0.21)  
4.78 (0.19)  
0.55 (0.02)  
2.61 (0.10)  
2.32 (0.09)  
8.89 (0.35)  
REF.  
0.46 (0.02)  
1.40 (0.055)  
1.14 (0.045)  
3X  
0.93 (0.37)  
0.69 (0.27)  
MINIMUM RECOMMENDED FOOTPRINT  
11.43 (0.45)  
2X  
1
3
4.57 (0.18)  
8.89 (0.35)  
4.32 (0.17)  
17.78 (0.70)  
2
0.61 (0.02) MAX.  
5.08 (0.20) REF.  
3.81 (0.15)  
2.08 (0.08)  
2X  
2.54 (0.10)  
2X  
Conforms to JEDEC Outline D2PAK  
Dimensions in millimeters and inches  
Part Marking Information  
EXAMPLE: THIS IS AN HFA08TB60S  
PART NUMBER  
(K)  
INTERNATIONAL  
RECTIFIER LOGO  
HFA08TB60S  
5K3A  
9712  
ASSEMBLY  
LOT CODE  
DATE CODE (YYWW)  
YY = YEAR  
WW = WEEK  
(A)  
(N/C)  
6
HFA08TB60S  
Bulletin PD-20607 rev. B 11/00  
Tape & Reel Information  
TRR  
1.60 (0.063)  
1.50 (0.059)  
4.10 (0.161)  
1.60 (0.063)  
1.50 (0.059)  
DIA.  
3.90 (0.153)  
0.368 (0.0145)  
0.342 (0.0135)  
FEED DIRECTION  
1.85 (0.073)  
1.65 (0.065)  
11.60 (0.457)  
11.40 (0.449)  
24.30 (0.957)  
23.90 (0.941)  
15.42 (0.609)  
15.22 (0.601)  
TRL  
1.75 (0.069)  
DIA.  
10.90 (0.429)  
10.70 (0.421)  
1.25 (0.049)  
16.10 (0.634)  
15.90 (0.626)  
4.72 (0.186)  
4.52 (0.178)  
FEED DIRECTION  
13.50 (0.532)  
12.80 (0.504)  
26.40 (1.039)  
24.40 (0.961)  
DIA.  
SMD-220 Tape & Reel  
When ordering, indicate the part  
number, part orientation, and the  
quantity. Quantities are in multiples  
of 800 pieces per reel for both  
TRL and TRR.  
60 (2.362)  
DIA. MIN.  
360 (14.173)  
DIA. MAX.  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.  
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.  
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.  
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.  
http://www.irf.com  
Fax-On-Demand: +44 1883 733420  
Data and specifications subject to change without notice.  
7

相关型号:

HFA08TB60SPBF

Ultrafast, Soft Recovery Diode
INFINEON

HFA08TB60SPBF

Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB60STRL

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, D2PAK-3
VISHAY

HFA08TB60STRLPBF

暂无描述
INFINEON

HFA08TB60STRLPBF

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
VISHAY

HFA08TB60STRR

暂无描述
INFINEON

HFA08TB60STRR

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, D2PAK-3
VISHAY

HFA08TB60STRRPBF

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
VISHAY

HFA1-0001-2

Analog IC
ETC

HFA1-0001-5

Ultra High Slew RateOperational Amplifier
INTERSIL

HFA1-0001-9

Ultra High Slew RateOperational Amplifier
INTERSIL

HFA1-0002-2

Analog IC
ETC