HFA08TB60SPBF [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA08TB60SPBF |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总7页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96037
HFA08TB60SPbF
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
VR = 600V
(K)
BASE
+
2
VF(typ.)* = 1.4V
IF(AV) = 8.0A
Qrr (typ.)= 65nC
IRRM = 5.0A
Benefits
trr(typ.) = 18ns
3
_
1
(N/C)
(A)
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
di(rec)M/dt (typ.) = 240A/µs
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available. With basic ratings of 600
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast
recovery time, the HEXFRED product line features extremely low values of peak
recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the
D2 Pak
tb portion of recovery. The HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is
ideally suited for applications in power supplies (PFC Boost diode) and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max.
Units
VR
Cathode-to-AnodeVoltage
600
8.0
60
V
IF @ TC = 100°C
IFSM
ContinuousForwardCurrent
Single Pulse Forward Current
MaximumRepetitiveForwardCurrent
MaximumPowerDissipation
A
IFRM
24
PD @ TC = 25°C
36
W
°C
PD @ TC = 100°C MaximumPowerDissipation
14
TJ
OperatingJunctionand
-55 to +150
TSTG
StorageTemperatureRange
* 125°C
1
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10/07/05
HFA08TB60SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
1.4 1.7
1.7 2.1
1.4 1.7
0.3 5.0
100 500
V
IR = 100µA
IF = 8.0A
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 16A
IF = 8.0A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
10
25
pF
nH
Measured lead to lead 5mm from
package body
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr
Reverse Recovery Time
18
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
37
55
55
90
ns TJ = 25°C
TJ = 125°C
See Fig. 5, 6
trr2
IF = 8.0A
VR = 200V
IRRM1
IRRM2
Qrr1
Peak Recovery Current
3.5 5.0
4.5 8.0
65 138
124 360
240
210
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
Reverse Recovery Charge
See Fig. 7
nC
Qrr2
dif/dt = 200A/µs
di(rec)M/dt1
di(rec)M/dt2
Peak Rate of Fall of Recovery Current
A/µs
See Fig. 8
During tb
Thermal - Mechanical Characteristics
Parameter
LeadTemperature
Min.
Typ.
2.0
Max.
300
Units
°C
Tlead
RthJC
RthJA
Wt
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
3.5
K/W
80
g
0.07
(oz)
0.063 in. from Case (1.6mm) for 10 sec
TypicalSocketMount
2
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HFA08TB60SPbF
1000
100
10
100
10
1
T = 150°C
J
T = 125°C
J
1
0.1
T = 25°C
J
0.01
0.001
T = 150°C
J
T = 125°C
J
0
100
200
300
400
500
600
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T = 25°C
J
10
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
1
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
0.01
0.1
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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3
HFA08TB60SPbF
20
15
10
5
80
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
F
F
I
I
= 8.0A
= 4.0A
60
40
20
0
I
= 16A
= 8.0A
= 4.0A
F
I
I
F
F
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
10000
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
F
300
200
100
0
F
1000
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
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HFA08TB60SPbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
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5
HFA08TB60SPbF
D2PAK Package Outline
Dimensions are shown in millimeters (inches)
D2PAK Part Marking Information
THIS IS A HFA08TB60S
(K)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YY = YEAR
AS S E MB L Y
LOT CODE
WW = WE E K
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
(N/C)
(A)
6
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HFA08TB60SPbF
D2PAK Tape & Reel Information
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/05
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7
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